ติดตาม
Kei May Lau
ชื่อ
อ้างโดย
อ้างโดย
ปี
High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
Y Cai, Y Zhou, KJ Chen, KM Lau
IEEE Electron Device Letters 26 (7), 435-437, 2005
8842005
Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode
Y Cai, Y Zhou, KM Lau, KJ Chen
IEEE transactions on electron devices 53 (9), 2207-2215, 2006
7052006
Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology
HV Han, HY Lin, CC Lin, WC Chong, JR Li, KJ Chen, P Yu, TM Chen, ...
Optics express 23 (25), 32504-32515, 2015
3402015
Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP pin photodiodes transferred on silicon
P Chen, WV Chen, PKL Yu, CW Tang, KM Lau, L Mawst, C Paulson, ...
Applied Physics Letters 94 (1), 2009
2622009
InP Layer Transfer with Masked Implantation
W Chen, P Bandaru, CW Tang, KM Lau, TF Kuech, SS Lau
Electrochemical and Solid-State Letters 12 (4), H149, 2009
2552009
Monolithic full-color LED micro-display on an active matrix panel manufactured using flip-chip technology
KM Lau, Z Liu
US Patent 8,642,363, 2014
2532014
Optical cross-talk reduction in a quantum-dot-based full-color micro-light-emitting-diode display by a lithographic-fabricated photoresist mold
HY Lin, CW Sher, DH Hsieh, XY Chen, HMP Chen, TM Chen, KM Lau, ...
Photonics Research 5 (5), 411-416, 2017
2382017
1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes With an Ultra-Low Leakage Current Below A/cm2
X Lu, X Zhou, H Jiang, KW Ng, Z Chen, Y Pei, KM Lau, G Wang
IEEE Electron Device Letters 41 (3), 449-452, 2020
2032020
1.3 μm submilliamp threshold quantum dot micro-lasers on Si
Y Wan, J Norman, Q Li, MJ Kennedy, D Liang, C Zhang, D Huang, ...
Optica 4 (8), 940-944, 2017
1942017
Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon
Q Li, KW Ng, KM Lau
Applied Physics Letters 106 (7), 2015
1912015
Enhancement-mode III-N devices, circuits, and methods
J Chen, Y Cai, KM Lau
US Patent 7,932,539, 2011
1902011
High-temperature operation of AlGaN/GaN HEMTs direct-coupled FET logic (DCFL) integrated circuits
Y Cai, Z Cheng, Z Yang, CW Tang, KM Lau, KJ Chen
IEEE electron device letters 28 (5), 328-331, 2007
1632007
Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template
CH Chiu, HH Yen, CL Chao, ZY Li, P Yu, HC Kuo, TC Lu, SC Wang, ...
Applied Physics Letters 93 (8), 2008
1612008
Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics
Q Li, KM Lau
Progress in Crystal Growth and Characterization of Materials 63 (4), 105-120, 2017
1592017
AlGaN-GaN double-channel HEMTs
R Chu, Y Zhou, J Liu, D Wang, KJ Chen, KM Lau
IEEE Transactions on electron devices 52 (4), 438-446, 2005
1582005
GaN-based LED micro-displays for wearable applications
Z Liu, WC Chong, KM Wong, KM Lau
Microelectronic Engineering 148, 98-103, 2015
1532015
Enhancement-ModeMISHFETs
R Wang, Y Cai, CW Tang, KM Lau, KJ Chen
IEEE electron device letters 27 (10), 793-795, 2006
1432006
Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si
J Norman, MJ Kennedy, J Selvidge, Q Li, Y Wan, AY Liu, PG Callahan, ...
Optics Express 25 (4), 3927-3934, 2017
1422017
Monolithically integrated InGaN/GaN light-emitting diodes, photodetectors, and waveguides on Si substrate
KH Li, WY Fu, YF Cheung, KKY Wong, Y Wang, KM Lau, HW Choi
Optica 5 (5), 564-569, 2018
1382018
Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators UsingPlasma Treatment
Y Cai, Z Cheng, WCW Tang, KM Lau, KJ Chen
IEEE transactions on electron devices 53 (9), 2223-2230, 2006
1342006
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บทความ 1–20