| Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers MR Wagner, G Callsen, JS Reparaz, JH Schulze, R Kirste, M Cobet, ... Physical Review B—Condensed Matter and Materials Physics 84 (3), 035313, 2011 | 252 | 2011 |
| Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap F Nippert, SY Karpov, G Callsen, B Galler, T Kure, C Nenstiel, MR Wagner, ... Applied Physics Letters 109 (16), 2016 | 111 | 2016 |
| Signature of the two-dimensional phonon dispersion in graphene probed by double-resonant Raman scattering P May, M Lazzeri, P Venezuela, F Herziger, G Callsen, JS Reparaz, ... Physical Review B—Condensed Matter and Materials Physics 87 (7), 075402, 2013 | 98 | 2013 |
| Lithium related deep and shallow acceptors in Li-doped ZnO nanocrystals C Rauch, W Gehlhoff, MR Wagner, E Malguth, G Callsen, R Kirste, ... Journal of Applied Physics 107 (2), 2010 | 95 | 2010 |
| A quantum optical study of thresholdless lasing features in high-β nitride nanobeam cavities ST Jagsch, NV Triviño, F Lohof, G Callsen, S Kalinowski, IM Rousseau, ... Nature communications 9 (1), 564, 2018 | 82 | 2018 |
| Phonon deformation potentials in wurtzite GaN and ZnO determined by uniaxial pressure dependent Raman measurements G Callsen, JS Reparaz, MR Wagner, R Kirste, C Nenstiel, A Hoffmann, ... Applied Physics Letters 98 (6), 2011 | 79 | 2011 |
| Optical signature of Mg-doped GaN: Transfer processes G Callsen, MR Wagner, T Kure, JS Reparaz, M Bügler, J Brunnmeier, ... Physical Review B—Condensed Matter and Materials Physics 86 (7), 075207, 2012 | 75 | 2012 |
| Excited state properties of donor bound excitons in ZnO BK Meyer, J Sann, S Eisermann, S Lautenschlaeger, MR Wagner, ... Physical Review B—Condensed Matter and Materials Physics 82 (11), 115207, 2010 | 69 | 2010 |
| Optical signatures of nitrogen acceptors in ZnO S Lautenschlaeger, S Eisermann, G Haas, EA Zolnowski, MN Hofmann, ... Physical Review B—Condensed Matter and Materials Physics 85 (23), 235204, 2012 | 67 | 2012 |
| Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN R Kirste, R Collazo, G Callsen, MR Wagner, T Kure, J Sebastian Reparaz, ... Journal of Applied Physics 110 (9), 2011 | 63 | 2011 |
| Point-defect nature of the ultraviolet absorption band in AlN D Alden, JS Harris, Z Bryan, JN Baker, P Reddy, S Mita, G Callsen, ... Physical Review Applied 9 (5), 054036, 2018 | 61 | 2018 |
| Manifestation of unconventional biexciton states in quantum dots G Hönig, G Callsen, A Schliwa, S Kalinowski, C Kindel, S Kako, ... Nature communications 5 (1), 5721, 2014 | 60 | 2014 |
| Germanium–the superior dopant in n‐type GaN C Nenstiel, M Bügler, G Callsen, F Nippert, T Kure, S Fritze, A Dadgar, ... physica status solidi (RRL)–Rapid Research Letters 9 (12), 716-721, 2015 | 58 | 2015 |
| Effects of strain on the valence band structure and exciton-polariton energies in ZnO MR Wagner, G Callsen, JS Reparaz, R Kirste, A Hoffmann, AV Rodina, ... Physical Review B 88 (23), 235210, 2013 | 58 | 2013 |
| Compensation effects in GaN: Mg probed by Raman spectroscopy and photoluminescence measurements R Kirste, MP Hoffmann, J Tweedie, Z Bryan, G Callsen, T Kure, C Nenstiel, ... Journal of Applied Physics 113 (10), 2013 | 58 | 2013 |
| Steering photon statistics in single quantum dots: From one-to two-photon emission G Callsen, A Carmele, G Hönig, C Kindel, J Brunnmeier, MR Wagner, ... Physical Review B—Condensed Matter and Materials Physics 87 (24), 245314, 2013 | 56 | 2013 |
| Toward bright and pure single photon emitters at 300 K based on GaN quantum dots on silicon S Tamariz, G Callsen, J Stachurski, K Shojiki, R Butté, N Grandjean Acs Photonics 7 (6), 1515-1522, 2020 | 52 | 2020 |
| Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method D Gogova, PP Petrov, M Buegler, MR Wagner, C Nenstiel, G Callsen, ... Journal of Applied Physics 113 (20), 2013 | 51 | 2013 |
| Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence F Nippert, S Karpov, I Pietzonka, B Galler, A Wilm, T Kure, C Nenstiel, ... Japanese Journal of Applied Physics 55 (5S), 05FJ01, 2016 | 49 | 2016 |
| Spectral diffusion in nitride quantum dots: Emission energy dependent linewidths broadening via giant built‐in dipole moments C Kindel, G Callsen, S Kako, T Kawano, H Oishi, G Hönig, A Schliwa, ... physica status solidi (RRL)–Rapid Research Letters 8 (5), 408-413, 2014 | 45 | 2014 |
Axel HoffmannInstitute of Solid State Physics, Technical University of Berlinยืนยันอีเมลแล้วที่ tu-berlin.de
