226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection D Liu, SJ Cho, J Park, J Gong, JH Seo, R Dalmau, D Zhao, K Kim, M Kim, ... Applied physics letters 113 (1), 2018 | 100 | 2018 |
229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection D Liu, SJ Cho, J Park, JH Seo, R Dalmau, D Zhao, K Kim, J Gong, M Kim, ... Applied Physics Letters 112 (8), 2018 | 85 | 2018 |
Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3 K Kim, M Hua, D Liu, J Kim, KJ Chen, Z Ma Nano Energy 43, 259-269, 2018 | 47 | 2018 |
Lattice-mismatched semiconductor heterostructures D Liu, SJ Cho, JH Seo, K Kim, M Kim, J Shi, X Yin, W Choi, C Zhang, ... arXiv preprint arXiv:1812.10225, 2018 | 43 | 2018 |
Transferrable single crystalline 4H-SiC nanomembranes M Kim, JH Seo, D Zhao, SC Liu, K Kim, K Lim, W Zhou, E Waks, Z Ma Journal of Materials Chemistry C 5 (2), 264-268, 2017 | 38 | 2017 |
Band-Bending of Ga-Polar GaN Interfaced with Al2O3 through Ultraviolet/Ozone Treatment K Kim, JH Ryu, J Kim, SJ Cho, D Liu, J Park, IK Lee, B Moody, W Zhou, ... ACS applied materials & interfaces 9 (20), 17576-17585, 2017 | 33 | 2017 |
Light-emitting diodes composed of n-ZnO and p-Si nanowires constructed on plastic substrates by dielectrophoresis K Kim, T Moon, M Lee, J Kang, Y Jeon, S Kim Solid State Sciences 13 (9), 1735-1739, 2011 | 33 | 2011 |
Sol‐gel Processed Yttrium‐doped SnO2 Thin Film Transistors C Lee, W Lee, H Lee, S Ha, J Bae, I Kang, H Kang, K Kim, J Jang Electronics 9, 254, 2020 | 32 | 2020 |
Effect of Annealing Environment on the Performance of Sol–Gel-Processed ZrO2 RRAM S Ha, H Lee, W Lee, B Jang, H Kwon, K Kim, J Jang Electronics 8, 947, 2019 | 32 | 2019 |
P-type silicon as hole supplier for nitride-based UVC LEDs SJ Cho, D Liu, JH Seo, R Dalmau, K Kim, J Park, J Gong, D Zhao, F Wang, ... New Journal of Physics 21 (2), 023011, 2019 | 32 | 2019 |
Extremely bias stress stable enhancement mode sol–gel-processed SnO2 thin-film transistors with Y2O3 passivation layers C Lee, WY Lee, DW Kim, HJ Kim, JH Bae, IM Kang, D Lim, K Kim, J Jang Applied Surface Science 559, 149971, 2021 | 27 | 2021 |
Electrically driven lasing in light-emitting devices composed of n-ZnO and p-Sinanowires K Kim, T Moon, J Kim, S Kim Nanotechnology 22 (24), 245203, 2011 | 24 | 2011 |
Reduction of leakage current in GaN Schottky diodes through ultraviolet/ozone plasma treatment K Kim, D Liu, J Gong, Z Ma IEEE Electron Device Letters 40 (11), 1796-1799, 2019 | 21 | 2019 |
AlGaN/GaN Schottky-Gate HEMTs With UV/O3-Treated Gate Interface K Kim, T Kim, H Zhang, D Liu, YH Jung, J Gong, Z Ma IEEE Electron Device Letters 41 (10), 1488, 2020 | 20 | 2020 |
Enhanced Switching Reliability of Sol–Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field DW Kim, HJ Kim, WY Lee, K Kim, SH Lee, JH Bae, IM Kang, K Kim, J Jang Materials 15 (5), 1943, 2022 | 19 | 2022 |
Effect of Mg Doping on the Electrical Performance of a Sol-Gel-Processed SnO2 Thin-Film Transistor W Lee, H Lee, S Ha, C Lee, J Bae, I Kang, K Kim, J Jang Electronics 9, 523, 2020 | 19 | 2020 |
Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route H Lee, S Ha, J Bae, I Kang, K Kim, W Lee, J Jang Electronics 8, 955, 2019 | 19 | 2019 |
Environmentally and Electrically Stable Sol–Gel-Deposited SnO2 Thin-Film Transistors with Controlled Passivation Layer Diffusion Penetration Depth That … WY Lee, DW Kim, HJ Kim, K Kim, SH Lee, JH Bae, IM Kang, K Kim, J Jang ACS applied materials & interfaces 14 (8), 10558-10565, 2022 | 16 | 2022 |
Synthesis and characterization of electrospun polymer nanofibers incorporated with CdTe nanoparticles K Cho, M Kim, J Choi, K Kim, S Kim Synthetic metals 160 (9-10), 888-891, 2010 | 16 | 2010 |
Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation VC Nguyen, K Kim, H Kim Micromachines 12 (4), 400, 2021 | 13 | 2021 |