| Gallium nitride electronics R Quay Springer Science & Business Media, 2008 | 465 | 2008 |
| Analysis and simulation of heterostructure devices V Palankovski, R Quay Springer Science & Business Media, 2004 | 289 | 2004 |
| High-temperature modeling of algan/gan hemts S Vitanov, V Palankovski, S Maroldt, R Quay Solid-State Electronics 54 (10), 1105-1112, 2010 | 194 | 2010 |
| A temperature dependent model for the saturation velocity in semiconductor materials R Quay, C Moglestue, V Palankovski, S Selberherr Materials Science in Semiconductor Processing 3 (1-2), 149-155, 2000 | 182 | 2000 |
| The continuous inverse class-F mode with resistive second-harmonic impedance V Carrubba, M Akmal, R Quay, J Lees, J Benedikt, SC Cripps, PJ Tasker IEEE Transactions on Microwave Theory and Techniques 60 (6), 1928-1936, 2012 | 139 | 2012 |
| Metal‐organic chemical vapor deposition of aluminum scandium nitride S Leone, J Ligl, C Manz, L Kirste, T Fuchs, H Menner, M Prescher, ... physica status solidi (RRL)–Rapid Research Letters 14 (1), 1900535, 2020 | 109 | 2020 |
| 102-GHz AlInN/GaN HEMTs on silicon with 2.5-W/mm output power at 10 GHz H Sun, AR Alt, H Benedickter, CR Bolognesi, E Feltin, JF Carlin, ... IEEE electron device letters 30 (8), 796-798, 2009 | 103 | 2009 |
| Robust AlGaN/GaN low noise amplifier MMICs for C-, Ku-and Ka-band space applications EM Suijker, M Rodenburg, JA Hoogland, M Van Heijningen, ... 2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium, 1-4, 2009 | 100 | 2009 |
| Gate-recessed AlGaN/GaN based enhancement-mode high electron mobility transistors for high frequency operation S Maroldt, C Haupt, W Pletschen, S Müller, R Quay, O Ambacher, ... Japanese journal of applied physics 48 (4S), 04C083, 2009 | 93 | 2009 |
| Assembly and packaging technologies for high-temperature and high-power GaN devices AA Bajwa, Y Qin, R Reiner, R Quay, J Wilde IEEE Transactions on Components, Packaging and Manufacturing Technology 5 …, 2015 | 79 | 2015 |
| Ultra-wideband GaN MMIC chip set and high power amplifier module for multi-function defense AESA applications U Schmid, H Sledzik, P Schuh, J Schroth, M Oppermann, P Brückner, ... IEEE Transactions on Microwave Theory and Techniques 61 (8), 3043-3051, 2013 | 78 | 2013 |
| D-band and G-band high-performance GaN power amplifier MMICs M Ćwikliński, P Brückner, S Leone, C Friesicke, H Maßler, R Lozar, ... IEEE Transactions on Microwave Theory and Techniques 67 (12), 5080-5089, 2019 | 74 | 2019 |
| GaN MMIC based T/R-module front-end for X-band applications P Schuh, H Sledzik, R Reber, A Fleckenstein, R Leberer, M Oppermann, ... 2008 European Microwave Integrated Circuit Conference, 274-277, 2008 | 74 | 2008 |
| GaN-based submicrometer HEMTs with lattice-matched InAlGaN barrier grown by MBE T Lim, R Aidam, P Waltereit, T Henkel, R Quay, R Lozar, T Maier, L Kirste, ... IEEE Electron Device Letters 31 (7), 671-673, 2010 | 72 | 2010 |
| Physics-based modeling of GaN HEMTs S Vitanov, V Palankovski, S Maroldt, R Quay, S Murad, T Rodle, ... IEEE Transactions on Electron Devices 59 (3), 685-693, 2012 | 70 | 2012 |
| Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures P Waltereit, S Müller, K Bellmann, C Buchheim, R Goldhahn, K Köhler, ... Journal of Applied Physics 106 (2), 2009 | 64 | 2009 |
| The resistive-reactive class-J power amplifier mode C Friesicke, R Quay, AF Jacob IEEE microwave and wireless components letters 25 (10), 666-668, 2015 | 60 | 2015 |
| The sky's the limit: Key technology and market trends in satellite communications R Emrick, P Cruz, NB Carvalho, S Gao, R Quay, P Waltereit IEEE Microwave Magazine 15 (2), 65-78, 2014 | 59 | 2014 |
| Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test M Caesar, M Dammann, V Polyakov, P Waltereit, W Bronner, M Baeumler, ... 2012 IEEE International Reliability Physics Symposium (IRPS), CD. 6.1-CD. 6.5, 2012 | 59 | 2012 |
| Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures O Ambacher, B Christian, M Yassine, M Baeumler, S Leone, R Quay Journal of Applied Physics 129 (20), 2021 | 58 | 2021 |
Oliver AmbacherGips-Schüle-Professur für Leistungselektronik, Universität Freiburgยืนยันอีเมลแล้วที่ inatech.uni-freiburg.de