| InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs SR Kurtz, AA Allerman, ED Jones, JM Gee, JJ Banas, BE Hammons Applied Physics Letters 74 (5), 729-731, 1999 | 679 | 1999 |
| Three-dimensional control of light in a two-dimensional photonic crystal slab E Chow, SY Lin, SG Johnson, PR Villeneuve, JD Joannopoulos, ... Nature 407 (6807), 983-986, 2000 | 574 | 2000 |
| Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 µm KD Choquette, JF Klem, AJ Fischer, O Blum, AA Allerman, IJ Fritz, ... Electronics Letters 36 (16), 1388-1390, 2000 | 387 | 2000 |
| Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers SR Lee, AM West, AA Allerman, KE Waldrip, DM Follstaedt, PP Provencio, ... Applied Physics Letters 86 (24), 2005 | 362 | 2005 |
| Band structure of In x Ga 1− x As 1− y N y alloys and effects of pressure ED Jones, NA Modine, AA Allerman, SR Kurtz, AF Wright, ST Tozer, X Wei Physical Review B 60 (7), 4430, 1999 | 269 | 1999 |
| Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods Y Xi, JQ Xi, T Gessmann, JM Shah, JK Kim, EF Schubert, AJ Fischer, ... Applied physics letters 86 (3), 2005 | 234 | 2005 |
| Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels AJ Fischer, AA Allerman, MH Crawford, KHA Bogart, SR Lee, RJ Kaplar, ... Applied Physics Letters 84 (17), 3394-3396, 2004 | 234 | 2004 |
| InGaAsN/GaAs heterojunction for multi-junction solar cells SR Kurtz, AA Allerman, JF Klem, ED Jones US Patent 6,252,287, 2001 | 228 | 2001 |
| Growth and design of deep-UV (240–290 nm) light emitting diodes using AlGaN alloys AA Allerman, MH Crawford, AJ Fischer, KHA Bogart, SR Lee, ... Journal of crystal growth 272 (1-4), 227-241, 2004 | 217 | 2004 |
| Type-II interband quantum cascade laser at 3.8 µm Lin, Yang, D Zhang, SJ Murry, SS Pei, AA Allerman, SR Kurtz Electronics Letters 33 (7), 598-599, 1997 | 206 | 1997 |
| Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen SR Kurtz, AA Allerman, CH Seager, RM Sieg, ED Jones Applied Physics Letters 77 (3), 400-402, 2000 | 200 | 2000 |
| Time-resolved photoluminescence studies of InxGa1− xAs1− yNy RA Mair, JY Lin, HX Jiang, ED Jones, AA Allerman, SR Kurtz Applied Physics Letters 76 (2), 188-190, 2000 | 191 | 2000 |
| High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser WJ Alford, TD Raymond, AA Allerman JOSA B 19 (4), 663-666, 2002 | 180 | 2002 |
| Strain relaxation in AlGaN multilayer structures by inclined dislocations DM Follstaedt, SR Lee, AA Allerman, JA Floro Journal of Applied Physics 105 (8), 2009 | 176 | 2009 |
| Single‐junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers SA Ringel, JA Carlin, CL Andre, MK Hudait, M Gonzalez, DM Wilt, ... Progress in Photovoltaics: Research and Applications 10 (6), 417-426, 2002 | 173 | 2002 |
| Ultra-wide-bandgap AlGaN power electronic devices RJ Kaplar, AA Allerman, AM Armstrong, MH Crawford, JR Dickerson, ... ECS Journal of Solid State Science and Technology 6 (2), Q3061, 2016 | 168 | 2016 |
| An AlN/Al0. 85Ga0. 15N high electron mobility transistor AG Baca, AM Armstrong, AA Allerman, EA Douglas, CA Sanchez, ... Applied Physics Letters 109 (3), 2016 | 151 | 2016 |
| Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence DD Koleske, AJ Fischer, AA Allerman, CC Mitchell, KC Cross, SR Kurtz, ... Applied Physics Letters 81 (11), 1940-1942, 2002 | 151 | 2002 |
| Vertical GaN power diodes with a bilayer edge termination JR Dickerson, AA Allerman, BN Bryant, AJ Fischer, MP King, MW Moseley, ... IEEE Transactions on Electron Devices 63 (1), 419-425, 2015 | 134 | 2015 |
| Strong coupling in the sub-wavelength limit using metamaterial nanocavities A Benz, S Campione, S Liu, I Montano, JF Klem, A Allerman, JR Wendt, ... Nature communications 4 (1), 2882, 2013 | 129 | 2013 |
