| Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions S Ganguly, J Verma, G Li, T Zimmermann, H Xing, D Jena Applied Physics Letters 99 (19), 193504-193504-3, 2011 | 195 | 2011 |
| MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05< formula formulatype= J Guo, G Li, F Faria, Y Cao, R Wang, J Verma, X Gao, S Guo, E Beam, ... Electron Device Letters, IEEE 33 (4), 525-527, 2012 | 188* | 2012 |
| MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures SM Islam, K Lee, J Verma, V Protasenko, S Rouvimov, S Bharadwaj, ... Applied Physics Letters 110 (4), 041108, 2017 | 132 | 2017 |
| Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design D Jena, J Simon, AK Wang, Y Cao, K Goodman, J Verma, S Ganguly, G Li, ... physica status solidi (a) 208 (7), 1511-1516, 2011 | 115 | 2011 |
| Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures J Verma, SM Islam, V Protasenko, PK Kandaswamy, HG Xing, D Jena Applied Physics Letters 104 (2), 021105, 2014 | 102 | 2014 |
| 220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs R Wang, G Li, J Verma, B Sensale-Rodriguez, T Fang, J Guo, Z Hu, ... Electron Device Letters, IEEE 32 (9), 1215-1217, 2011 | 98 | 2011 |
| N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping J Verma, J Simon, V Protasenko, T Kosel, H Grace Xing, D Jena Applied Physics Letters 99 (17), 171104-171104-3, 2011 | 87 | 2011 |
| Polarization-Induced GaN-on-Insulator E/D Mode p-Channel Heterostructure FETs G Li, R Wang, B Song, J Verma, Y Cao, S Ganguly, A Verma, J Guo, ... IEEE ELECTRON DEVICE LETTERS 34 (7), 2013 | 85 | 2013 |
| Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes J Verma, PK Kandaswamy, V Protasenko, A Verma, H Grace Xing, D Jena Applied Physics Letters 102 (4), 041103-041103-4, 2013 | 83 | 2013 |
| Localized Surface Phonon Polariton Resonances in Polar Gallium Nitride K Feng, W Streyer, SM Islam, J Verma, D Jena, D Wasserman, ... Applied Physics Letters 107, 081108, 2015 | 74 | 2015 |
| Donor− Acceptor 9-Uncapped Fluorenes and Fluorenones as Stable Blue Light Emitters†,‡ A Goel, S Chaurasia, M Dixit, V Kumar, S Prakash, B Jena, JK Verma, ... Organic Letters 11 (6), 1289-1292, 2009 | 73 | 2009 |
| Strained GaN quantum-well FETs on single crystal bulk AlN substrates M Qi, G Li, S Ganguly, P Zhao, X Yan, J Verma, B Song, M Zhu, K Nomoto, ... Applied Physics Letters 110 (6), 063501, 2017 | 72 | 2017 |
| Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN G Li, B Song, S Ganguly, M Zhu, R Wang, X Yan, J Verma, V Protasenko, ... Applied Physics Letters 104 (19), 193506, 2014 | 72 | 2014 |
| High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy M Qi, K Nomoto, M Zhu, Z Hu, Y Zhao, V Protasenko, B Song, X Yan, G Li, ... Applied Physics Letters 107, 232101, 2015 | 68 | 2015 |
| Green luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy KD Goodman, VV Protasenko, J Verma, TH Kosel, HG Xing, D Jena Journal of Applied Physics 109 (8), 084336-084336-10, 2011 | 67 | 2011 |
| Physics and polarization characteristics of 298 nm AlN-delta-GaN quantum well ultraviolet light-emitting diodes C Liu, YK Ooi, SM Islam, J Verma, HG Xing, D Jena, J Zhang Applied Physics Letters 110 (7), 071103, 2017 | 62 | 2017 |
| InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and f_ {\ text {T}}/f_ {\ text {max}} of 260/220 GHz R Wang, G Li, G Karbasian, J Guo, F Faria, Z Hu, Y Yue, J Verma, ... Applied Physics Express 6 (1), 016503-016503-3, 2013 | 57* | 2013 |
| InGaN channel high-electron-mobility transistors with InAlGaN barrier and fT/fmax of 260/220 GHz R Wang, G Li, G Karbasian, J Guo, F Faria, Z Hu, Y Yue, J Verma, ... Applied Physics Express 6 (1), 6503, 2013 | 57 | 2013 |
| Ultrathin Body GaN-on-Insulator Quantum Well FETs With Regrown Ohmic Contacts G Li, R Wang, J Guo, J Verma, Z Hu, Y Yue, F Faria, Y Cao, M Kelly, ... Electron Device Letters, IEEE 33 (5), 661-663, 2012 | 57 | 2012 |
| Metal‐face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy J Guo, Y Cao, C Lian, T Zimmermann, G Li, J Verma, X Gao, S Guo, ... physica status solidi (a) 208 (7), 1617-1619, 2011 | 53 | 2011 |
Debdeep JenaCornell UniversityVerifierad e-postadress på cornell.edu