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Xi Tang
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Citeras av
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600-V Normally Off /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse
Z Tang, Q Jiang, Y Lu, S Huang, S Yang, X Tang, KJ Chen
IEEE Electron Device Letters 34 (11), 1373-1375, 2013
3022013
Mechanism of Threshold Voltage Shift in-GaN Gate AlGaN/GaN Transistors
X Tang, B Li, HA Moghadam, P Tanner, J Han, S Dimitrijev
IEEE Electron Device Letters 39 (8), 1145-1148, 2018
1412018
Low on-resistance normally-off GaN double-channel metal–oxide–semiconductor high-electron-mobility transistor
J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen
IEEE Electron Device Letters 36 (12), 1287-1290, 2015
1012015
Influence of AlN passivation on dynamic ON-resistance and electric field distribution in high-voltage AlGaN/GaN-on-Si HEMTs
Z Tang, S Huang, X Tang, B Li, KJ Chen
IEEE Transactions on Electron Devices 61 (8), 2785-2792, 2014
682014
Nb2CTx MXene Nanosheets for Dye Adsorption
Y Yan, H Han, Y Dai, H Zhu, W Liu, X Tang, W Gan, H Li
ACS Appl. Nano Mater. 4, 11763−11769, 2021
662021
Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess
J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen
2015 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2015
572015
Strain-tunable III-nitride/ZnO heterostructures for photocatalytic water-splitting: A hybrid functional calculation
Z Zhang, B Huang, Q Qian, Z Gao, X Tang, B Li
Apl Materials 8 (4), 2020
562020
Dynamic of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination
G Tang, J Wei, Z Zhang, X Tang, M Hua, H Wang, KJ Chen
IEEE Electron Device Letters 38 (7), 937-940, 2017
472017
Barrier inhomogeneity of Schottky diode on nonpolar AlN grown by physical vapor transport
Q Zhou, H Wu, H Li, X Tang, Z Qin, D Dong, Y Lin, C Lu, R Qiu, R Zheng, ...
IEEE Journal of the Electron Devices Society 7, 662-667, 2019
442019
Temperature enhanced responsivity and speed in an AlGaN/GaN metal-heterostructure-metal photodetector
X Tang, F Ji, H Wang, Z Jin, H Li, B Li, J Wang
Applied physics letter 119 (1), 013503, 2021
372021
Asymmetric Bipolar Injection in a Schottky-Metal/ -GaN/AlGaN/GaN Device Under Forward Bias
B Li, H Li, J Wang, X Tang
IEEE Electron Device Letters 40 (9), 1389-1392, 2019
332019
An analytical investigation on the charge distribution and gate control in the normally-off GaN double-channel MOS-HEMT
J Wei, M Zhang, B Li, X Tang, KJ Chen
IEEE Transactions on Electron Devices 65 (7), 2757-2764, 2018
332018
Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center
Q Zhou, Z Zhang, H Li, S Golovynskyi, X Tang, H Wu, J Wang, B Li
Apl Materials 8 (8), 2020
322020
Revealing the nitridation effects on gan surface by first-principles calculation and X-Ray/ultraviolet photoemission spectroscopy
Z Zhang, B Li, Q Qian, X Tang, M Hua, B Huang, KJ Chen
IEEE Transactions on Electron Devices 64 (10), 4036-4043, 2017
312017
Channel-to-channel coupling in normally-off GaN double-channel MOS-HEMT
J Wei, J Lei, X Tang, B Li, S Liu, KJ Chen
IEEE Electron Device Letters 39 (1), 59-62, 2017
292017
P-doping-free III-nitride high electron mobility light-emitting diodes and transistors
B Li, X Tang, J Wang, KJ Chen
Applied Physics Letters 105 (3), 2014
292014
Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode
B Li, X Tang, KJ Chen
Applied Physics Letters 106 (9), 2015
272015
III-Nitride transistors with photonic-ohmic drain for enhanced dynamic performances
X Tang, B Li, Y Lu, H Wang, C Liu, J Wei, KJ Chen
2015 IEEE International Electron Devices Meeting (IEDM), 35.3. 1-35.3. 4, 2015
262015
Homological aspects of the dual Auslander transpose
X Tang, Z Huang
Forum Mathematicum 27 (6), 3717-3743, 2015
242015
Characterization of static and dynamic behaviors in AlGaN/GaN-on-Si power transistors with photonic-ohmic drain
X Tang, B Li, Z Zhang, G Tang, J Wei, KJ Chen
IEEE Transactions on Electron Devices 63 (7), 2831-2837, 2016
222016
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