Artiklar med krav på offentlig åtkomst - Harri LipsanenLäs mer
Inte tillgängliga någonstans: 23
Rapid and large-area characterization of exfoliated black phosphorus using third-harmonic generation microscopy
A Autere, CR Ryder, A Saynatjoki, L Karvonen, B Amirsolaimani, ...
The journal of physical chemistry letters 8 (7), 1343-1350, 2017
Krav: US Department of Defense, Academy of Finland
Second-harmonic generation imaging of semiconductor nanowires with focused vector beams
G Bautista, J Makitalo, Y Chen, V Dhaka, M Grasso, L Karvonen, H Jiang, ...
Nano Letters 15 (3), 1564-1569, 2015
Krav: Academy of Finland, Innovationsfinansieringsverket Tekes, European Commission
Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
J Ronn, L Karvonen, C Kauppinen, AP Perros, N Peyghambarian, ...
Acs Photonics 3 (11), 2040-2048, 2016
Krav: Academy of Finland, Innovationsfinansieringsverket Tekes
Thermal conductivity of amorphous Al2O3/TiO2 nanolaminates deposited by atomic layer deposition
S Ali, T Juntunen, S Sintonen, OME Ylivaara, RL Puurunen, H Lipsanen, ...
Nanotechnology 27 (44), 445704, 2016
Krav: Innovationsfinansieringsverket Tekes, European Commission
High performance complementary WS 2 devices with hybrid Gr/Ni contacts
MF Khan, F Ahmed, S Rehman, I Akhtar, MA Rehman, PA Shinde, K Khan, ...
Nanoscale 12 (41), 21280-21290, 2020
Krav: Academy of Finland, European Commission
Tailorable second‐harmonic generation from an individual nanowire using spatially phase‐shaped beams
L Turquet, JP Kakko, X Zang, L Naskali, L Karvonen, H Jiang, T Huhtio, ...
Laser & Photonics Reviews 11 (1), 1600175, 2017
Krav: Academy of Finland, Innovationsfinansieringsverket Tekes, European Commission
Large-area analysis of dislocations in ammonothermal GaN by synchrotron radiation X-ray topography
S Sintonen, S Suihkonen, H Jussila, A Danilewsky, R Stankiewicz, ...
Applied Physics Express 7 (9), 091003, 2014
Krav: European Commission
All-graphene three-terminal-junction field-effect devices as rectifiers and inverters
W Kim, C Li, N Chekurov, S Arpiainen, D Akinwande, H Lipsanen, ...
ACS nano 9 (6), 5666-5674, 2015
Krav: Academy of Finland, Innovationsfinansieringsverket Tekes
A technique for large-area position-controlled growth of GaAs nanowire arrays
C Kauppinen, T Haggren, A Kravchenko, H Jiang, T Huhtio, E Kauppinen, ...
Nanotechnology 27 (13), 135601, 2016
Krav: Academy of Finland
Defect structure of a free standing GaN wafer grown by the ammonothermal method
S Sintonen, S Suihkonen, H Jussila, H Lipsanen, TO Tuomi, E Letts, ...
Journal of crystal growth 406, 72-77, 2014
Krav: Academy of Finland, European Commission
New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles
A Bouravleuv, I Ilkiv, R Reznik, K Kotlyar, I Soshnikov, G Cirlin, P Brunkov, ...
Nanotechnology 29 (4), 045602, 2017
Krav: Academy of Finland
Synthesis and properties of ultra-long InP nanowires on glass
V Dhaka, V Pale, V Khayrudinov, JP Kakko, T Haggren, H Jiang, ...
Nanotechnology 27 (50), 505606, 2016
Krav: Academy of Finland
Large-diameter indium antimonide microwire based broadband and robust optical switch
F Lou, X Cui, X Sheng, C Jia, S Zhang, X Wang, V Khayrudinov, B Zhang, ...
Science China Physics, Mechanics & Astronomy 66 (2), 224211, 2023
Krav: National Natural Science Foundation of China, Academy of Finland
Probing the longitudinal electric field of Bessel beams using second-harmonic generation from nano-objects
L Turquet, JP Kakko, L Karvonen, H Jiang, E Kauppinen, H Lipsanen, ...
Journal of Optics 19 (8), 084011, 2017
Krav: Academy of Finland, Innovationsfinansieringsverket Tekes, European Commission
Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
P Mattila, M Bosund, H Jussila, A Aierken, J Riikonen, T Huhtio, ...
Applied surface science 314, 570-574, 2014
Krav: Academy of Finland, Innovationsfinansieringsverket Tekes
Radiation detectors fabricated on high-purity GaAs epitaxial materials
X Wu, P Kostamo, A Gädda, S Nenonen, T Riekkinen, J Härkönen, ...
Journal of Instrumentation 9 (12), C12024, 2014
Krav: Innovationsfinansieringsverket Tekes
Lifetimes of the vibrational states of DNA molecules in functionalized complexes of semiconductor quantum dots
FB Bayramov, ED Poloskin, AL Chernev, VV Toporov, MV Dubina, ...
Technical Physics Letters 44, 70-72, 2018
Krav: Innovationsfinansieringsverket Tekes
Versatile water-based transfer of large-area graphene films onto flexible substrates
M Kim, C Li, J Susoma, J Riikonen, H Lipsanen
MRS Advances 2 (60), 3749-3754, 2017
Krav: European Commission
Understanding the Growth Mechanisms of γ-GeSe for Polymorph-Selective Large-Area Deposition
JE Jung, S Lee, H Kang, M Jang, J Park, M Petri, H Lipsanen, Z Sun, ...
Journal of Materials Chemistry C, 2024
Krav: Academy of Finland
Synchrotron X-ray diffraction topography study of bonding-induced strain in silicon-on-insulator wafers
A Lankinen, TO Tuomi, P Kostamo, H Jussila, S Sintonen, H Lipsanen, ...
Thin Solid Films 603, 435-440, 2016
Krav: European Commission
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