Toward smart and ultra‐efficient solid‐state lighting JY Tsao, MH Crawford, ME Coltrin, AJ Fischer, DD Koleske, ...
Advanced Optical Materials 2 (9), 809-836, 2014
408 2014 A modified pulsed gradient technique for measuring diffusion in the presence of large background gradients RF Karlicek Jr, IJ Lowe
Journal of Magnetic Resonance (1969) 37 (1), 75-91, 1980
362 1980 Inductively coupled plasma etching of GaN RJ Shul, GB McClellan, SA Casalnuovo, DJ Rieger, SJ Pearton, ...
Applied physics letters 69 (8), 1119-1121, 1996
304 1996 Thermal management for LED applications CJM Lasance, A Poppe
Springer, 2014
271 2014 Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy CA Tran, A Osinski, RF Karlicek, I Berishev
Applied physics letters 75 (11), 1494-1496, 1999
227 1999 III-Nitride based light emitting diodes and applications TY Seong, J Han, H Amano, H Morkoç
Springer, 2017
205 2017 Mechanism of hydrogen absorption by lanthanum-nickel (LaNi5) WE Wallace, RF Karlicek, H Imamura
Journal of Physical Chemistry 83 (13), 1708-1712, 1979
202 1979 Competition between band gap and yellow luminescence in GaN and its relevance for optoelectronic devices W Grieshaber, EF Schubert, ID Goepfert, RF Karlicek Jr, MJ Schurman, ...
Journal of Applied Physics 80 (8), 4615-4620, 1996
177 1996 Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in … Z Li, J Waldron, T Detchprohm, C Wetzel, RF Karlicek, TP Chow
Applied Physics Letters 102 (19), 2013
155 2013 Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures A Billeb, W Grieshaber, D Stocker, EF Schubert, RF Karlicek Jr
Applied physics letters 70 (21), 2790-2792, 1997
155 1997 Electrical and structural analysis of high-dose Si implantation in GaN JC Zolper, HH Tan, JS Williams, J Zou, DJH Cockayne, SJ Pearton, ...
Applied physics letters 70 (20), 2729-2731, 1997
135 1997 Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to BP Luther, JM DeLucca, SE Mohney, RF Karlicek Jr
Applied physics letters 71 (26), 3859-3861, 1997
134 1997 Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes DZ Garbuzov, JC Connolly, RF Karlicek Jr, IT Ferguson
US Patent 6,404,125, 2002
126 2002 Tiled illumination assembly and related methods AA Erchak, RF Karlicek, D Doyle, G Taraschi, MA Joffe, C Hoepfner
US Patent 8,092,064, 2012
125 2012 Time-resolved photoluminescence measurements of InGaN light-emitting diodes M Pophristic, FH Long, C Tran, IT Ferguson, RF Karlicek Jr
Applied Physics Letters 73 (24), 3550-3552, 1998
118 1998 GaN LED with solderable backside metal SR Gibb, RF Karlicek, PK Mukerji, HS Venugopalan, I Eliashevich
US Patent 7,190,005, 2007
112 2007 LED color management and display systems AA Erchak, M Lim, NI Nemchuk, AL Pokrovskiy, RF Karlicek Jr, R Kumar
US Patent 7,959,341, 2011
102 2011 Wavelength-converting light-emitting devices AA Erchak, M Lim, E Lidorikis, JA Venezia, MG Brown, RF Karlicek Jr
US Patent 7,196,354, 2007
99 2007 Wavelength-converting light-emitting devices J Alexei A. Erchak, Michael Lim, Elefterios Lidorikis, Jo A. Venezia ...
US Patent 7,196,354, 2007
99 2007 Semiconductor device separation using a patterned laser projection M Gottfried, MG Brown, I Eliashevich, RF Karlicek Jr, JE Nering
US Patent 6,902,990, 2005
98 2005 
Ian T. FergusonSouthern Polytechnic College of Engineering and Engineering Technology, Kennesaw State UniversityVerifierad e-postadress på kennesaw.edu