Anisotropic thermal conductivity in single crystal β-gallium oxide Z Guo, A Verma, X Wu, F Sun, A Hickman, T Masui, A Kuramata, ...
Appl. Phys. Lett. 106, 111909, 2015
544 2015 Intrinsic electron mobility limits in beta-Ga2O3 N Ma, N Tanen, A Verma, Z Guo, T Luo, H Xing, D Jena
Appl. Phys. Lett. 109, 212101, 2016
423 2016 High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes WS Hwang, A Verma, H Peelaers, V Protasenko, S Rouvimov, HG Xing, ...
Applied Physics Letters 104 (20), 203111, 2014
404 2014 Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy H Paik, Z Chen, E Lochocki, A Seidner H., A Verma, N Tanen, J Park, ...
APL Materials 5, 2017
170 2017 Intrinsic Mobility Limiting Mechanisms in Lanthanum-doped Strontium Titanate A Verma, AP Kajdos, TA Cain, S Stemmer, D Jena
Physical Review Letters 112 (21), 216601, 2014
127 2014 Inductively-coupled-plasma reactive ion etching of single-crystal β-Ga2O3 L Zhang, A Verma, HG Xing, D Jena
Japanese Journal of Applied Physics 56, 030304, 2017
88 2017 Polarization-induced GaN-on-insulator E/D mode p-channel heterostructure FETs G Li, R Wang, B Song, J Verma, Y Cao, S Ganguly, A Verma, J Guo, ...
IEEE Electron Device Letters 34 (7), 852-854, 2013
85 2013 Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes J Verma, PK Kandaswamy, V Protasenko, A Verma, HG Xing, D Jena
Applied Physics Letters 102 (4), 041103, 2013
83 2013 Compact Modeling of Drain Current, Charges, and Capacitances in Long-Channel Gate-All-Around Negative Capacitance MFIS Transistor AD Gaidhane, G Pahwa, A Verma, YS Chauhan
IEEE Transactions on Electron Devices, 2018
77 2018 Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2 J Encomendero, R Yan, A Verma, SM Islam, V Protasenko, S Rouvimov, ...
Applied Physics Letters 112, 2018
74 2018 Ferroelectric transition in compressively strained SrTiO3 thin films A Verma, S Raghavan, S Stemmer, D Jena
Applied Physics Letters 107, 192908, 2015
69 2015 Charge transport in non-polar and semi-polar III-V nitride heterostructures A Konar, A Verma, T Fang, P Zhao, R Jana, D Jena
Semiconductor Science and Technology 27 (2), 024018, 2012
45 2012 Temperature dependence of β-Ga2O3 heteroepitaxy on c-plane sapphire using low pressure chemical vapor deposition G Joshi, YS Chauhan, A Verma
Journal of Alloys and Compounds 883, 160799, 2021
43 2021 Maghemite/Polyvinylidene Fluoride Nanocomposite for Transparent, Flexible Triboelectric Nanogenerator and Noncontact Magneto-Triboelectric Nanogenerator B Fatma, R Bhunia, S Gupta, A Verma, V Verma, A Garg
ACS Sustainable Chemistry & Engineering 7 (17), 14856-14866, 2019
40 2019 Accurate Online Junction Temperature Estimation of IGBT Using Inflection Point Based Updated I–V Characteristics A Arya, A Chanekar, P Deshmukh, A Verma, S Anand
IEEE Transactions on Power Electronics 36 (9), 9826-9836, 2021
35 2021 Au-gated SrTiO3 field-effect transistors with large electron concentration and current modulation A Verma, S Raghavan, S Stemmer, D Jena
Applied Physics Letters 105, 113512, 2014
31 2014 Gate-Induced Drain Leakage in Negative Capacitance FinFETs AD Gaidhane, G Pahwa, A Verma, YS Chauhan
IEEE Transactions on Electron Devices 67 (3), 802-809, 2020
26 2020 Vanadium dioxide thin films synthesized using low thermal budget atmospheric oxidation P Ashok, YS Chauhan, A Verma
Thin Solid Films 706, 138003, 2020
24 2020 Determination of the Mott-Hubbard gap in L Bjaalie, A Verma, B Himmetoglu, A Janotti, S Raghavan, V Protasenko, ...
Physical Review B 92 (8), 085111, 2015
24 2015 Determination of the Mott-Hubbard gap in GdTiO3 L Bjaalie, A Verma, B Himmetoglu, A Janotti, S Raghavan, V Protasenko, ...
Physical Review B 92, 085111, 2015
24 2015 
Debdeep JenaCornell UniversityVerifierad e-postadress på cornell.edu
