Artiklar med krav på offentlig åtkomst - Amit VermaLäs mer
Inte tillgängliga någonstans: 18
Compact Modeling of Drain Current, Charges, and Capacitances in Long-Channel Gate-All-Around Negative Capacitance MFIS Transistor
AD Gaidhane, G Pahwa, A Verma, YS Chauhan
IEEE Transactions on Electron Devices, 2018
Krav: Department of Science & Technology, India
Maghemite/Polyvinylidene Fluoride Nanocomposite for Transparent, Flexible Triboelectric Nanogenerator and Noncontact Magneto-Triboelectric Nanogenerator
B Fatma, R Bhunia, S Gupta, A Verma, V Verma, A Garg
ACS Sustainable Chemistry & Engineering 7 (17), 14856-14866, 2019
Krav: Department of Science & Technology, India
Gate-Induced Drain Leakage in Negative Capacitance FinFETs
AD Gaidhane, G Pahwa, A Verma, YS Chauhan
IEEE Transactions on Electron Devices 67 (3), 802-809, 2020
Krav: Department of Science & Technology, India
Study of multi-domain switching dynamics in negative capacitance FET using SPICE model
AD Gaidhane, A Verma, YS Chauhan
Microelectronics Journal 115, 105186, 2021
Krav: Department of Science & Technology, India
Structure and Degradation of Aluminum Electrolytic Capacitors
SB Narale, A Verma, S Anand
2019 National Power Electronics Conference (NPEC), 1-6, 2019
Krav: Department of Science & Technology, India
Practical semiconductor physics perspective of materials photoelectrochemistry
A Verma, RG Pala
Current Opinion in Electrochemistry 36, 101160, 2022
Krav: Department of Science & Technology, India
Accelerated Aging Method and Lifetime Evaluation of Aluminum Electrolytic Capacitors for Power Electronic Application
SB Narale, A Verma, S Anand
2020 IEEE Energy Conversion Congress and Exposition (ECCE), 3662-3669, 2020
Krav: Department of Science & Technology, India
Multiple Points Measurement-Based Junction Temperature Estimation of IGBT Module
A Arya, A Chanekar, A Verma, S Anand
IEEE Journal of Emerging and Selected Topics in Power Electronics 11 (3 …, 2023
Krav: Department of Science & Technology, India
Analysis and Compact Modeling of Insulator–Metal Transition Material-Based PhaseFET Including Hysteresis and Multidomain Switching
A Dasgupta, A Verma, YS Chauhan
IEEE Transactions on Electron Devices 66 (1), 169-176, 2018
Krav: Department of Science & Technology, India
Lithography-free fabrication of Vanadium Dioxide and its devices using direct laser writing
H Bandhu, P Ashok, DP Khandapu, A Verma
Optics & Laser Technology 167, 109673, 2023
Krav: Department of Science & Technology, India
Investigation of growth dynamics of β-Ga2O3 LPCVD by independently controlling Ga precursor and substrate temperature
G Joshi, YS Chauhan, A Verma
Japanese Journal of Applied Physics 62 (SF), SF1017, 2023
Krav: Department of Science & Technology, India
Experimental Demonstration of based Lateral/Vertical Devices and Relaxation Oscillator with an Ultra-low Thermal Budget Process
P Ashok, YS Chauhan, A Verma
2022 IEEE International Conference on Emerging Electronics (ICEE), 1-5, 2022
Krav: Department of Science & Technology, India
De-skewing Algorithm for Accurate Switching Loss Calculation in GaN HEMT
A Gangwar, A Chanekar, S Anand, A Verma
2024 IEEE Transportation Electrification Conference and Expo (ITEC), 1-6, 2024
Krav: Department of Science & Technology, India
Flexible Vanadium Dioxide Films and Devices on Kapton Fabricated with Low Temperature Atmospheric Oxidation of Vanadium
P Ashok, YS Chauhan, A Verma
IEEE Journal on Flexible Electronics, 2024
Krav: Department of Science & Technology, India
Analytical modeling for optimum energy harvesting using Triboelectric Nanogenerators under steady state operation
R Gupta, A Verma
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024
Krav: Department of Science & Technology, India
Proposal for True Random Number Generation in ferroelectric capacitors using noise-induced switching
M Ramesh, A Verma, A Ajoy
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024
Krav: Department of Science & Technology, India
Proposal for stochastic resonance in a ferroelectric-graphene transistor
M Ramesh, A Verma, A Ajoy
2023 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 17-20, 2023
Krav: Department of Science & Technology, India
Impact of Operational Factors on the Lifetime of Power Semiconductor Devices in Electric Vehicles
A Arya, A Chanekar, NK Endla, A Verma, S Anand
IECON 2022–48th Annual Conference of the IEEE Industrial Electronics Society …, 2022
Krav: Department of Science & Technology, India
Tillgängliga någonstans: 20
Intrinsic electron mobility limits in beta-Ga2O3
N Ma, N Tanen, A Verma, Z Guo, T Luo, H Xing, D Jena
Appl. Phys. Lett. 109, 212101, 2016
Krav: US National Science Foundation
Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy
H Paik, Z Chen, E Lochocki, A Seidner H., A Verma, N Tanen, J Park, ...
APL Materials 5, 2017
Krav: US National Science Foundation, US Department of Defense
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