Artiklar med krav på offentlig åtkomst - Huili Grace XingLäs mer
Inte tillgängliga någonstans: 11
Exceptional terahertz wave modulation in graphene enhanced by frequency selective surfaces
R Yan, S Arezoomandan, B Sensale-Rodriguez, HG Xing
ACS photonics 3 (3), 315-323, 2016
Krav: US National Science Foundation
15-ghz epitaxial aln fbars on sic substrates
W Zhao, MJ Asadi, L Li, R Chaudhuri, K Nomoto, HG Xing, JCM Hwang, ...
IEEE Electron Device Letters 44 (6), 903-906, 2023
Krav: US National Science Foundation, US Department of Defense
ON-Resistance of Ga2O3 Trench-MOS Schottky Barrier Diodes: Role of Sidewall Interface Trapping
W Li, K Nomoto, Z Hu, D Jena, HG Xing
IEEE Transactions on Electron Devices 68 (5), 2420-2426, 2021
Krav: US National Science Foundation, US Department of Defense
Electric fields and surface fermi level in undoped GaN/AlN two‐dimensional hole gas heterostructures
Ł Janicki, R Chaudhuri, SJ Bader, HG Xing, D Jena, R Kudrawiec
physica status solidi (RRL)–Rapid Research Letters 15 (4), 2000573, 2021
Krav: US National Science Foundation, US Department of Defense, Narodowe Centrum Nauki
Resonant tunneling transport in polar III-Nitride heterostructures
J Encomendero, D Jena, HG Xing
High-Frequency GaN Electronic Devices, 215-247, 2019
Krav: US Department of Defense
Barrier Height Stability and Reverse Leakage Mechanisms in Ni/Ga2O3 (001) Schottky Barrier Diodes
W Li, K Nornoto, Z Hu, D Jena, HG Xing
2019 Device Research Conference (DRC), 159-160, 2019
Krav: US National Science Foundation, US Department of Defense
Layered two-dimensional selenides and tellurides grown by molecular beam epitaxy
X Liu, JK Furdyna, S Rouvimov, S Vishwanath, D Jena, HG Xing, ...
Chalcogenide, 235-269, 2020
Krav: US National Science Foundation
Impacts of device processing on contact interfaces to (010) β-Ga2O3
KT Smith, CA Gorsak, A Kalra, BJ Cromer, D Jena, HP Nair, HG Xing
Oxide-based Materials and Devices XV 12887, 25-33, 2024
Krav: US National Science Foundation, US Department of Defense
Toward new ferroelectric nitride materials and devices: Aluminum boron nitride and aluminum scandium nitride ferroelectric high electron mobility transistors (FerroHEMTs)
J Casamento, J Hayden, S Trolier-McKinstry, JP Maria, TS Nguyen, ...
Semiconductors and Semimetals 114, 119-136, 2023
Krav: US Department of Energy, US Department of Defense
Recent Progress of GaN-Based Vertical Devices
K Nomoto, Z Hu, W Li, M Zhu, K Lee, D Jena, HG Xing
Electrochemical Society Meeting Abstracts 236, 1348-1348, 2019
Krav: US National Science Foundation, US Department of Energy
Tunneling devices over van der Waals bonded hetero-interface
R Yan, D Jena, HG Xing
2017 5th International Workshop on Low Temperature Bonding for 3D …, 2017
Krav: US National Science Foundation, US Department of Defense
Tillgängliga någonstans: 212
Thermal conductivity of monolayer molybdenum disulfide obtained from temperature-dependent Raman spectroscopy
R Yan, JR Simpson, S Bertolazzi, J Brivio, M Watson, X Wu, A Kis, T Luo, ...
ACS nano 8 (1), 986-993, 2014
Krav: Swiss National Science Foundation
Exciton Dynamics in Suspended Monolayer and Few-Layer MoS2 2D Crystals
H Shi, R Yan, S Bertolazzi, J Brivio, B Gao, A Kis, D Jena, HG Xing, ...
ACS nano 7 (2), 1072-1080, 2013
Krav: Swiss National Science Foundation
Intrinsic electron mobility limits in β-Ga2O3
N Ma, N Tanen, A Verma, Z Guo, T Luo, HG Xing, D Jena
Applied Physics Letters 109 (21), 2016
Krav: US National Science Foundation
Enhancement-Mode Ga2O3Vertical Transistors With Breakdown Voltage >1 kV
Z Hu, K Nomoto, W Li, N Tanen, K Sasaki, A Kuramata, T Nakamura, ...
IEEE Electron Device Letters 39 (6), 869-872, 2018
Krav: US National Science Foundation, US Department of Defense
Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/ of up to 0.95 GW/cm2
W Li, K Nomoto, Z Hu, D Jena, HG Xing
IEEE Electron Device Letters 41 (1), 107-110, 2019
Krav: US National Science Foundation, US Department of Defense
1.9-kV AlGaN/GaN lateral Schottky barrier diodes on silicon
M Zhu, B Song, M Qi, Z Hu, K Nomoto, X Yan, Y Cao, W Johnson, E Kohn, ...
IEEE Electron Device Letters 36 (4), 375-377, 2015
Krav: US Department of Energy
1.7-kV and 0.55- GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability
K Nomoto, B Song, Z Hu, M Zhu, M Qi, N Kaneda, T Mishima, T Nakamura, ...
IEEE Electron Device Letters 37 (2), 161-164, 2015
Krav: US Department of Energy
Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN pn diodes with avalanche breakdown
Z Hu, K Nomoto, B Song, M Zhu, M Qi, M Pan, X Gao, V Protasenko, ...
Applied Physics Letters 107 (24), 2015
Krav: US Department of Energy
Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors
Z Hu, K Nomoto, W Li, Z Zhang, N Tanen, QT Thieu, K Sasaki, A Kuramata, ...
Applied Physics Letters 113 (12), 2018
Krav: US National Science Foundation, US Department of Defense
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