Daniel M. Fleetwood

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Ron SchrimpfProfessor of Electrical Engineering, Vanderbilt UniversityVerifierad e-postadress på vanderbilt.edu
Enxia ZhangUniversity of Central FloridaVerifierad e-postadress på ucf.edu
Michael AllesVanderbilt UniversityVerifierad e-postadress på vanderbilt.edu
Robert A. WellerVanderbilt UniversityVerifierad e-postadress på vanderbilt.edu
Sergey RashkeevPrincipal Scientist, Acting Research Director, Qatar Environment & Energy Research InstituteVerifierad e-postadress på qf.org.qa
Dimitri LintenImecVerifierad e-postadress på imec.be
Yevgeniy PuzyrevData & Applied Scientist, MicrosoftVerifierad e-postadress på microsoft.com
blair tuttlePenn State Erie; The Behrend CollegeVerifierad e-postadress på psu.edu
John D. CresslerRegents Professor, School of Electrical and Computer Engineering Georgia TechVerifierad e-postadress på ece.gatech.edu
Xiao ShenAssociate Professor of Physics, University of MemphisVerifierad e-postadress på memphis.edu
Jim SpeckProfessor of Materials, UCSBVerifierad e-postadress på ucsb.edu
Tania RoyDuke UniversityVerifierad e-postadress på duke.edu
John H. ScofieldProfessor of Physics, Oberlin CollegeVerifierad e-postadress på oberlin.edu
Umesh MishraUCSBVerifierad e-postadress på ece.ucsb.edu
Lloyd MassengillVanderbilt UniversityVerifierad e-postadress på vanderbilt.edu
Matthew BeckChemical and Materials Engineering, University of KentuckyVerifierad e-postadress på engr.uky.edu
Leonard BrillsonThe Ohio State UniversityVerifierad e-postadress på osu.edu
jean-luc lerayanaxagoras2kVerifierad e-postadress på anaxagoras2k.fr
cher xuan zhangIntel

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Daniel M. Fleetwood

Professor of Electrical Engineering, Vanderbilt University

Verifierad e-postadress på vanderbilt.edu - Startsida

radiation effects defects microelectronics low frequency noise


Titel Sortera efter citat Sortera efter år Sortera efter titel	Citeras av Citeras av	År
Radiation effects in MOS oxides JR Schwank, MR Shaneyfelt, DM Fleetwood, JA Felix, PE Dodd, P Paillet, ... IEEE Transactions on Nuclear Science 55 (4), 1833-1853, 2008	1028	2008
Effects of oxide traps, interface traps, and ‘‘border traps’’on metal‐oxide‐semiconductor devices DM Fleetwood, PS Winokur, RA Reber Jr, TL Meisenheimer, JR Schwank, ... Journal of Applied Physics 73 (10), 5058-5074, 1993	618	1993
'Border traps' in MOS devices DM Fleetwood IEEE transactions on nuclear science 39 (2), 269-271, 1992	486	1992
Total ionizing dose effects in MOS and low-dose-rate-sensitive linear-bipolar devices DM Fleetwood IEEE Transactions on Nuclear Science 60 (3), 1706-1730, 2013	396	2013
Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates DM Fleetwood, SL Kosier, RN Nowlin, RD Schrimpf, RA Reber, M DeLaus, ... IEEE Transactions on Nuclear Science 41 (6), 1871-1883, 1994	376	1994
Physical model for enhanced interface-trap formation at low dose rates SN Rashkeev, CR Cirba, DM Fleetwood, RD Schrimpf, SC Witczak, ... IEEE Transactions on Nuclear Science 49 (6), 2650-2655, 2002	295	2002
1/f noise and radiation effects in MOS devices DM Fleetwood, TL Meisenheimer, JH Scofield IEEE Transactions on Electron Devices 41 (11), 1953-1964, 1994	266	1994
Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices MR Shaneyfelt, DM Fleetwood, JR Schwank, KL Hughes IEEE transactions on nuclear science 38 (6), 1187-1194, 1991	265	1991
Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments DM Fleetwood, PS Winokur, JR Schwank IEEE Transactions on Nuclear Science 35 (6), 1497-1505, 1988	262	1988
Defect generation by hydrogen at the Si-SiO 2 interface SN Rashkeev, DM Fleetwood, RD Schrimpf, ST Pantelides Physical review letters 87 (16), 165506, 2001	245	2001
An overview of high-temperature electronic device technologies and potential applications PL Dreike, DM Fleetwood, DB King, DC Sprauer, TE Zipperian IEEE Transactions on Components, Packaging, and Manufacturing Technology …, 1994	243	1994
Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous ZY Lu, CJ Nicklaw, DM Fleetwood, RD Schrimpf, ST Pantelides Physical review letters 89 (28), 285505, 2002	238	2002
Charge separation for bipolar transistors SL Kosier, RD Schrimpf, RN Nowlin, DM Fleetwood, M DeLaus, RL Pease, ... IEEE transactions on nuclear science 40 (6), 1276-1285, 1993	238	1993
ELDRS in bipolar linear circuits: A review RL Pease, RD Schrimpf, DM Fleetwood IEEE Transactions on Nuclear Science 56 (4), 1894-1908, 2009	235	2009
Border traps: Issues for MOS radiation response and long-term reliability DM Fleetwood, MR Shaneyfelt, WL Warren, JR Schwank, ... Microelectronics Reliability 35 (3), 403-428, 1995	227	1995
1/f noise and defects in microelectronic materials and devices DM Fleetwood IEEE Transactions on Nuclear Science 62 (4), 1462-1486, 2015	216	2015
Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices DM Fleetwood, HD Xiong, ZY Lu, CJ Nicklaw, JA Felix, RD Schrimpf, ... IEEE Transactions on Nuclear Science 49 (6), 2674-2683, 2002	212	2002
Evolution of total ionizing dose effects in MOS devices with Moore’s law scaling DM Fleetwood IEEE Transactions on Nuclear Science 65 (8), 1465-1481, 2017	204	2017
Evidence that similar point defects cause 1/f noise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors DM Fleetwood, JH Scofield Physical review letters 64 (5), 579, 1990	203	1990
Non-volatile memory device based on mobile protons in SiO₂ thin films K Vanheusden, WL Warren, RAB Devine, DM Fleetwood, JR Schwank, ... Nature 386 (6625), 587-589, 1997	201	1997

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