Artiklar med krav på offentlig åtkomst - Michael E. ColtrinLäs mer
Inte tillgängliga någonstans: 2
Solid‐state lighting: toward smart and ultraefficient materials, devices, lamps, and systems
MH Crawford, JJ Wierer, AJ Fischer, GT Wang, DD Koleske, ...
Photonics: Photonics Technology and Instrumentation, 1-56, 2015
Krav: US Department of Energy
Top-down fabrication for III-nitride nanophotonics
GT Wang, B Leung, C Li, MC Tsai, S Liu, JB Wright, DD Koleske, P Lu, ...
2017 IEEE Photonics Society Summer Topical Meeting Series (SUM), 85-86, 2017
Krav: US Department of Energy
Tillgängliga någonstans: 23
Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
Krav: US National Science Foundation, US Department of Energy, US Department of …
An AlN/Al0. 85Ga0. 15N high electron mobility transistor
AG Baca, AM Armstrong, AA Allerman, EA Douglas, CA Sanchez, ...
Applied Physics Letters 109 (3), 2016
Krav: US Department of Energy
Analysis of 2D transport and performance characteristics for lateral power devices based on AlGaN alloys
ME Coltrin, AG Baca, RJ Kaplar
ECS Journal of Solid State Science and Technology 6 (11), S3114, 2017
Krav: US Department of Energy
Transport and breakdown analysis for improved figure-of-merit for AlGaN power devices
ME Coltrin, RJ Kaplar
Journal of Applied Physics 121 (5), 2017
Krav: US Department of Energy
Quantum-size-controlled photoelectrochemical fabrication of epitaxial InGaN quantum dots
X Xiao, AJ Fischer, GT Wang, P Lu, DD Koleske, ME Coltrin, JB Wright, ...
Nano letters 14 (10), 5616-5620, 2014
Krav: US Department of Energy
Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries
LK Aagesen, ME Coltrin, J Han, K Thornton
Journal of Applied Physics 117 (19), 2015
Krav: US Department of Energy
Photoelectrochemical etching of epitaxial InGaN thin films: self-limited kinetics and nanostructuring
X Xiao, AJ Fischer, ME Coltrin, P Lu, DD Koleske, GT Wang, R Polsky, ...
Electrochimica Acta 162, 163-168, 2015
Krav: US Department of Energy
Influence of pH on the quantum-size-controlled photoelectrochemical etching of epitaxial InGaN quantum dots
X Xiao, P Lu, AJ Fischer, ME Coltrin, GT Wang, DD Koleske, JY Tsao
The Journal of Physical Chemistry C 119 (50), 28194-28198, 2015
Krav: US Department of Energy
Ultra-efficient solid-state lighting: Likely characteristics, economic benefits, technological approaches
JY Tsao, JJ Wierer, LES Rohwer, ME Coltrin, MH Crawford, JA Simmons, ...
III-Nitride Based Light Emitting Diodes and Applications, 11-28, 2017
Krav: US Department of Energy
Unified Nusselt-and Sherwood-number correlations in axisymmetric finite-gap stagnation and rotating-disk flows
ME Coltrin, RJ Kee
International Journal of Heat and Mass Transfer 102, 122-132, 2016
Krav: US Department of Energy
Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO2
B Leung, MC Tsai, J Song, Y Zhang, K Xiong, G Yuan, ME Coltrin, J Han
Journal of Crystal Growth 426, 95-102, 2015
Krav: US Department of Energy
An AlN/Al0.85Ga0.15N high electron mobility transistor with a regrown ohmic contact
AG Baca, AM Armstrong, AA Allerman, EA Douglas, CA Sanchez, ...
2016 74th Annual Device Research Conference (DRC), 1-2, 2016
Krav: US Department of Energy
Measurement and thermal modeling of sapphire substrate temperature at III-Nitride MOVPE conditions
JR Creighton, ME Coltrin, JJ Figiel
Journal of Crystal Growth 464, 132-137, 2017
Krav: US Department of Energy
Quantum Nanofabrication: Mechanisms and Fundamental Limits
GT Wang, ME Coltrin, P Lu, PR Miller, B Leung, X Xiao, KR Sapkota, ...
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States); Sandia …, 2018
Krav: US Department of Energy
Size-Controlled Photoelectrochemical Etching of InGaN Quantum Dots and GaN Nanowires.
GT Wang, B Leung, KR Sapkota, X Xiao, AJ Fischer, P Lu, A Sadhvikas, ...
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2018
Krav: US Department of Energy
Visible Quantum Nanophotonics.
GS Subramania, GT Wang, AJ Fischer, JJ Wierer, JY Tsao, D Koleske, ...
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2017
Krav: US Department of Energy
Quantum Size Controlled Etching of InGaN Quantum Dots.
GT Wang, B Leung, X Xiao, AJ Fischer, P Lu, PR Miller, MC Tsai, ...
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2017
Krav: US Department of Energy
InGaN Quantum Dots by Quantum Size Controlled Photoelectrochemical Etching.
GT Wang, B Leung, X Xiao, AJ Fischer, P Lu, PR Miller, MC Tsai, ...
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2017
Krav: US Department of Energy
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