Прати
Yoonsang Park
Yoonsang Park
Samsung Advanced Institute of Technology (SAIT)
Верификована је имејл адреса на samsung.com
Наслов
Навело
Навело
Година
SrNbO3 as a transparent conductor in the visible and ultraviolet spectra
Y Park, J Roth, D Oka, Y Hirose, T Hasegawa, A Paul, A Pogrebnyakov, ...
Communications Physics 3 (1), 102, 2020
782020
Distinct solubility and cytotoxicity regimes of paclitaxel-loaded cationic liposomes at low and high drug content revealed by kinetic phase behavior and cancer cell viability …
VM Steffes, MM Murali, Y Park, BJ Fletcher, KK Ewert, CR Safinya
Biomaterials 145, 242-255, 2017
482017
Negative differential capacitance in ultrathin ferroelectric hafnia
S Jo, H Lee, DH Choe, JH Kim, YS Lee, O Kwon, S Nam, Y Park, K Kim, ...
Nature Electronics 6 (5), 390-397, 2023
392023
Linear and nonlinear optical probe of the ferroelectric-like phase transition in a polar metal, LiOsO3
H Padmanabhan, Y Park, D Puggioni, Y Yuan, Y Cao, L Gasparov, Y Shi, ...
Applied Physics Letters 113 (12), 2018
382018
Nanoengineering room temperature ferroelectricity into orthorhombic SmMnO3 films
EM Choi, T Maity, A Kursumovic, P Lu, Z Bi, S Yu, Y Park, B Zhu, R Wu, ...
Nature communications 11 (1), 2207, 2020
282020
Improvement of the standard characterization method on k33 mode piezoelectric specimens
Y Park, Y Zhang, M Majzoubi, T Scholehwar, E Hennig, K Uchino
Sensors and Actuators A: Physical 312, 112124, 2020
212020
Compressive stress effect on the loss mechanism in a soft piezoelectric Pb (Zr, Ti) O3
H Daneshpajooh, M Choi, Y Park, T Scholehwar, E Hennig, K Uchino
Review of Scientific Instruments 90 (7), 2019
182019
Analytical modeling of k33 mode partial electrode configuration for loss characterization
Y Park, M Majzoubi, Y Zhang, T Scholehwar, E Hennig, K Uchino
Journal of Applied Physics 127 (20), 2020
132020
An analytical interpretation of the memory window in ferroelectric field-effect transistors
S Yoo, DH Choe, HJ Lee, S Jo, YS Lee, Y Park, KH Kim, D Kim, SG Nam
Applied Physics Letters 123 (22), 2023
112023
DC bias electric field and stress dependence of piezoelectric parameters in lead zirconate titanate ceramics–Phenomenological approach
H Daneshpajooh, Y Park, T Scholehwar, E Hennig, K Uchino
Ceramics International 46 (10), 15572-15580, 2020
112020
Theory‐Guided Synthesis of a Metastable Lead‐Free Piezoelectric Polymorph
LM Garten, S Dwaraknath, J Walker, JS Mangum, PF Ndione, Y Park, ...
Advanced materials 30 (25), 1800559, 2018
102018
Laminated ferroelectric FET with large memory window and high reliability
HJ Lee, S Nam, Y Lee, K Kim, DH Choe, S Yoo, Y Park, S Jo, D Kim, ...
IEEE Transactions on Electron Devices, 2024
92024
Parallel synaptic design of ferroelectric tunnel junctions for neuromorphic computing
T Moon, HJ Lee, S Nam, H Bae, DH Choe, S Jo, YS Lee, Y Park, JJ Yang, ...
Neuromorphic Computing and Engineering 3 (2), 024001, 2023
82023
Depolarization field effect on elasticity of unpoled piezoelectric ceramics
Y Park, H Daneshpajooh, T Scholehwar, E Hennig, K Uchino
Applied Materials Today 23, 101020, 2021
62021
Loss determination techniques for piezoelectrics: a review
Y Park, M Choi, K Uchino
Actuators 12 (5), 213, 2023
42023
Partial electrode method for loss and physical parameter determination of piezoceramics: Simplification, error investigation and applicability
Y Park, H Daneshpajooh, T Scholehwar, E Hennig, K Uchino
Journal of the European Ceramic Society 41 (12), 5900-5908, 2021
42021
Physical parameter and loss determination of piezoceramics using partial electrode: k31 and k33 mode cases
Y Park, H Daneshpajooh, T Scholehwar, E Hennig, K Uchino
arXiv preprint arXiv:2012.07053, 2020
42020
Determination of anisotropic intensive piezoelectric loss in polycrystalline ceramics
M Choi, Y Park, H Daneshpajooh, T Scholehwar, E Hennig, K Uchino
Ceramics International 47 (11), 16309-16315, 2021
22021
Partial Electrode Configuration as a Tool for the Precise Determination of Losses and Physical Parameters of Piezoceramics
Y Park, M Choi, H Daneshpajooh, T Scholehwar, E Hennig, K Uchino
Journal of the Korean Institute of Electrical and Electronic Material …, 2021
22021
Highly Enhanced Memory Window of 17.8 V in Ferroelectric FET with IGZO Channel via Introduction of Intermediate Oxygen-Deficient Channel and Gate Interlayer
S Yoo, D Kim, DH Choe, HJ Lee, Y Lee, S Jo, Y Park, KH Kim, K Jung, ...
2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2024
12024
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