| Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfOx bilayer memristive device for neuromorphic … DP Sahu, K Park, PH Chung, J Han, TS Yoon Scientific Reports 13 (1), 9592, 2023 | 20 | 2023 |
| Improvement of forming-free threshold switching reliability of CeO2-based selector device by controlling volatile filament formation behaviors DP Sahu, K Park, J Han, TS Yoon APL Materials 10 (5), 2022 | 17 | 2022 |
| Tunable voltage polarity-dependent resistive switching characteristics by interface energy barrier modulation in ceria-based bilayer memristors for neuromorphic computing S Moon, K Park, PH Chung, DP Sahu, TS Yoon Journal of Alloys and Compounds 963, 171211, 2023 | 11 | 2023 |
| Forming-Free, Low-Voltage, and High-Speed Resistive Switching in Ag/Oxygen-Deficient Vanadium Oxide(VOx)/Pt Device through Two-Step Resistance Change … J Ryu, K Park, DP Sahu, TS Yoon ACS Applied Materials & Interfaces 16 (20), 26450-26459, 2024 | 9 | 2024 |
| Interface state-dependent synaptic characteristics of Pt/CeO2/Pt memristors controlled by post-deposition annealing K Park, PH Chung, DP Sahu, TS Yoon Materials Science in Semiconductor Processing 147, 106718, 2022 | 9 | 2022 |
| Electroforming-free threshold switching of NbO x–based selector devices by controlling conducting phases in the NbO x layer for the application to crossbar array architectures K Park, J Ryu, DP Sahu, HM Kim, TS Yoon RSC advances 12 (29), 18547-18558, 2022 | 5 | 2022 |
| Tunable Multilevel Gate Oxide Capacitance and Flat‐Band Voltage Shift Characteristics by Filament Formation in Double‐Floating‐Gate Metal–Oxide–Semiconductor Capacitors J Han, K Park, HM Kim, TS Yoon Advanced Electronic Materials 9 (4), 2201110, 2023 | 1 | 2023 |
