Jan Schmidt

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Karsten BotheGroup Leader Solar Cell Characterisation and simulation, Institut für SolarenergieforschungPreverjeni e-poštni naslov na isfh.de
Andres CuevasEmeritus Professor, School of Engineering, The Australian NationalPreverjeni e-poštni naslov na anu.edu.au
Prof Armin ABERLENational University of SingaporePreverjeni e-poštni naslov na nus.edu.sg
Daniel MacdonaldProfessor, Engineering, The Australian National UniversityPreverjeni e-poštni naslov na anu.edu.au
Pietro Peter AltermattPrincipal Scientist at Trina Solar Inc., Changzhou, ChinaPreverjeni e-poštni naslov na gpvsim.org
Sandra HerlufsenISFHPreverjeni e-poštni naslov na isfh.de
Bram HoexProfessor, UNSW SydneyPreverjeni e-poštni naslov na unsw.edu.au
Stefan W. GlunzProfessor of Photovoltaic Energy Conversion, University of Freiburg & Fraunhofer ISEPreverjeni e-poštni naslov na inatech.uni-freiburg.de
Fiacre RougieuxSenior lecturer, The University of New South WalesPreverjeni e-poštni naslov na unsw.edu.au
Richter ArminSenior Scientist, Fraunhofer ISEPreverjeni e-poštni naslov na ise.fraunhofer.de
Otwin BreitensteinResearcher, Max Planck Institute, Associate Professor, University HallePreverjeni e-poštni naslov na mpi-halle.mpg.de
Jan BauerUniversity of LeipzigPreverjeni e-poštni naslov na uni-leipzig.de
Jan-Martin WagnerTechnical Faculty, University of Kiel, GermanyPreverjeni e-poštni naslov na tf.uni-kiel.de
Ronald A. SintonPresident and Senior Scientist, Sinton InstrumentsPreverjeni e-poštni naslov na sintoninstruments.com
Martin C. SchubertHead of Department Quality Assurance, Characterization and Simulation, Fraunhofer ISEPreverjeni e-poštni naslov na ise.fraunhofer.de
Uwe RauForschungszentrum JülichPreverjeni e-poštni naslov na fz-juelich.de
Wilhelm WartaFraunhofer ISEPreverjeni e-poštni naslov na ise.fraunhofer.de
Jens MüllerSEMIKRON DanfossPreverjeni e-poštni naslov na semikron-danfoss.com
Gernot HeiserProfessor of Computer Science, University of New South WalesPreverjeni e-poštni naslov na unsw.edu.au
Dr. Jan Hendrik Petermannzur Zeit der Veröffentlichungen, Institut für Solarenergieforschung Hameln

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Jan Schmidt

Professor, Institute for Solar Energy Research Hamelin (ISFH) & Leibniz University Hannover

Preverjeni e-poštni naslov na isfh.de

Photovoltaics Semiconductor Physics Solar Cells Silicon Solar Cells Silicon Photovoltaics


Naslov Razvrsti po navedbah Razvrsti po letniku Razvrsti po naslovu	Navedeno Navedeno	Leto
Improved quantitative description of Auger recombination in crystalline silicon A Richter, SW Glunz, F Werner, J Schmidt, A Cuevas Phys. Rev. B 86, 165202/1-14, 2012	1082	2012
Silicon surface passivation by atomic-layer-deposited Al2O3 B Hoex, J Schmidt, P Pohl, MCM van de Sanden, WMM Kessels Journal of Applied Physics 104, 044903, 2008	639	2008
Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al₂O₃ J Schmidt, A Merkle, R Brendel, B Hoex, MCM de Sanden, WMM Kessels Progress in photovoltaics: research and applications 16 (6), 461-466, 2008	623	2008
Structure and transformation of the metastable boron-and oxygen-related defect center in crystalline silicon J Schmidt, K Bothe Physical review B 69 (2), 024107, 2004	585	2004
Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon C Schinke, P Peest, R Brendel, J Schmidt, K Bothe, M Vogt, I Kröger, ... AIP Advances 5, 067168, 2015	558	2015
Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3 B Hoex, J Schmidt, R Bock, PP Altermatt, MCM Van De Sanden, ... Applied Physics Letters 91 (11), 2007	539	2007
Electronically activated boron-oxygen-related recombination centers in crystalline silicon K Bothe, J Schmidt Journal of Applied Physics 99 (1), 2006	469	2006
Surface passivation of crystalline silicon solar cells: Present and future J Schmidt, R Peibst, R Brendel Sol. En. Mat. Sol. Cells 187, 39-54, 2018	437	2018
Record low surface recombination velocities on 1 Ω cm p‐silicon using remote plasma silicon nitride passivation T Lauinger, J Schmidt, AG Aberle, R Hezel Applied physics letters 68 (9), 1232-1234, 1996	435	1996
Fundamental boron–oxygen‐related carrier lifetime limit in mono‐and multicrystalline silicon K Bothe, R Sinton, J Schmidt Progress in photovoltaics: Research and Applications 13 (4), 287-296, 2005	397	2005
Investigation of carrier lifetime instabilities in Cz-grown silicon J Schmidt, AG Aberle, R Hezel Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists …, 1997	366	1997
Surfacepassivation of silicon solar cells using plasma-enhancedchemical-vapour-deposited SiN films and thin thermalSiO2/plasma SiN stacks J Schmidt, M Kerr, A Cuevas Semiconductor science and technology 16 (3), 164, 2001	357	2001
Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide MJ Kerr, J Schmidt, A Cuevas, JH Bultman Journal of applied physics 89 (7), 3821-3826, 2001	352	2001
19%‐efficient and 43 µm‐thick crystalline Si solar cell from layer transfer using porous silicon JH Petermann, D Zielke, J Schmidt, F Haase, EG Rojas, R Brendel Progress in Photovoltaics: Research and Applications 20 (1), 1-5, 2012	324	2012
Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon J Schmidt, A Cuevas Journal of Applied Physics 86 (6), 3175-3180, 1999	314	1999
Electronic and chemical properties of the c-Si/Al2O3 interface F Werner, B Veith, D Zielke, L Kühnemund, C Tegenkamp, M Seibt, ... Journal of Applied Physics 109 (11), 2011	295	2011
Industrial silicon solar cells applying the passivated emitter and rear cell (PERC) concept – a review T Dullweber, J Schmidt IEEE Journal of Photovoltaics 6, 1366, 2016	276	2016
Accurate method for the determination of bulk minority-carrier lifetimes of mono-and multicrystalline silicon wafers J Schmidt, AG Aberle Journal of Applied Physics 81 (9), 6186-6199, 1997	250	1997
Carrier recombination at silicon–silicon nitride interfaces fabricated by plasma-enhanced chemical vapor deposition J Schmidt, AG Aberle Journal of Applied Physics 85, 3626-3633, 1999	239	1999
Effective surface passivation of crystalline silicon using ultrathin Al₂O₃ films and Al₂O₃/SiN_x stacks J Schmidt, B Veith, R Brendel physica status solidi (RRL)–Rapid Research Letters 3 (9), 287-289, 2009	232	2009

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