Gerhard Klimeck

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Timothy BoykinUniversity of Alabama in HuntsvillePreverjeni e-poštni naslov na uah.edu
Rajib RahmanProfessor of Physics, University of New South WalesPreverjeni e-poštni naslov na unsw.edu.au
Michael PovolotskyiJacobs TechnologiesPreverjeni e-poštni naslov na jacobs.com
Mathieu LuisierETH ZurichPreverjeni e-poštni naslov na iis.ee.ethz.ch
Tillmann KubisPurdue UniversityPreverjeni e-poštni naslov na purdue.edu
Roger K. LakeUniversity of California RiversidePreverjeni e-poštni naslov na ece.ucr.edu
Sven RoggeProfessor of Physics, University of New South WalesPreverjeni e-poštni naslov na unsw.edu.au
Hoon Ryu (류훈)Kumoh National Institute of TechnologyPreverjeni e-poštni naslov na kumoh.ac.kr
Mark LundstromProfessor of Electrical and Computer Engineering, Purdue UniversityPreverjeni e-poštni naslov na purdue.edu
Abhijeet paulGraduate Student Purdue University, Device Engineer GlobalfoundriesPreverjeni e-poštni naslov na globalfoundries.com
Seungwon LeeNASA Jet Propulsion Laboratory, California Institute of TechnologyPreverjeni e-poštni naslov na jpl.nasa.gov
Yaohua TanUniversity of VirginiaPreverjeni e-poštni naslov na purdue.edu
Saumitra MehrotraNXP SemiconductorsPreverjeni e-poštni naslov na nxp.com
Andrea MorelloScientia Professor of Quantum Engineering, University of New South WalesPreverjeni e-poštni naslov na unsw.edu.au
Tarek AmeenComponent Design Engineer at IntelPreverjeni e-poštni naslov na intel.com
Neophytos NeophytouSchool of Engineering, University of WarwickPreverjeni e-poštni naslov na warwick.ac.uk
Susan CoppersmithProfessor of Physics, University of New South WalesPreverjeni e-poštni naslov na unsw.edu.au
Joerg AppenzellerProfessor of Electrical and Computer Engineering, Purdue UniversityPreverjeni e-poštni naslov na purdue.edu
Muhammad UsmanCSIRO's Data61 and The University of Melbourne, AustraliaPreverjeni e-poštni naslov na alumni.purdue.edu
Zhengping JiangSamsung Semiconductor Inc.Preverjeni e-poštni naslov na samsung.com

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Gerhard Klimeck

Professor of Electrical and Computer Engineering, Purdue University

Preverjeni e-poštni naslov na purdue.edu - Domača stran

nanoelectronics electron transport quantum dots coulomb blockade high performance computing


Naslov Razvrsti po navedbah Razvrsti po letniku Razvrsti po naslovu	Navedeno Navedeno	Leto
Silicon quantum electronics FA Zwanenburg, AS Dzurak, A Morello, MY Simmons, LCL Hollenberg, ... Reviews of modern physics 85 (3), 961-1019, 2013	1431	2013
A single-atom transistor M Fuechsle, JA Miwa, S Mahapatra, H Ryu, S Lee, O Warschkow, ... Nature nanotechnology 7 (4), 242-246, 2012	1192	2012
Single and multiband modeling of quantum electron transport through layered semiconductor devices R Lake, G Klimeck, RC Bowen, D Jovanovic Journal of Applied Physics 81 (12), 7845-7869, 1997	1039	1997
Valence band effective-mass expressions in the sp 3 d 5 s* empirical tight-binding model applied to a Si and Ge parametrization TB Boykin, G Klimeck, F Oyafuso Physical Review B 69 (11), 115201, 2004	518	2004
Atomistic simulation of nanowires in the tight-binding formalism: From boundary conditions to strain calculations M Luisier, A Schenk, W Fichtner, G Klimeck Physical Review B—Condensed Matter and Materials Physics 74 (20), 205323, 2006	514	2006
Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET GP Lansbergen, R Rahman, CJ Wellard, I Woo, J Caro, N Collaert, ... Nature Physics 4 (8), 656-661, 2008	454	2008
Ohm’s law survives to the atomic scale B Weber, S Mahapatra, H Ryu, S Lee, A Fuhrer, TCG Reusch, ... Science 335 (6064), 64-67, 2012	395	2012
Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting CH Yang, A Rossi, R Ruskov, NS Lai, FA Mohiyaddin, S Lee, C Tahan, ... Nature communications 4 (1), 2069, 2013	380	2013
Computational Electronics: semiclassical and quantum device modeling and simulation D Vasileska, SM Goodnick, G Klimeck CRC press, 2017	369	2017
Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory TB Boykin, G Klimeck, RC Bowen, F Oyafuso Physical Review B 66 (12), 125207, 2002	321	2002
Boundary conditions for the electronic structure of finite-extent embedded semiconductor nanostructures S Lee, F Oyafuso, P Von Allmen, G Klimeck Physical Review B 69 (4), 045316, 2004	304	2004
nanohub. org: Advancing education and research in nanotechnology G Klimeck, M McLennan, SP Brophy, GB Adams III, MS Lundstrom Computing in Science & Engineering 10 (5), 17-23, 2008	299	2008
Atomistic simulation of realistically sized nanodevices using NEMO 3-D—Part I: Models and benchmarks G Klimeck, SS Ahmed, H Bae, N Kharche, S Clark, B Haley, S Lee, ... IEEE Transactions on Electron Devices 54 (9), 2079-2089, 2007	299	2007
Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering M Luisier, G Klimeck Physical Review B—Condensed Matter and Materials Physics 80 (15), 155430, 2009	287	2009
Development of a nanoelectronic 3-D (NEMO 3-D) simulator for multimillion atom simulations and its application to alloyed quantum dots G Klimeck, F Oyafuso, TB Boykin, RC Bowen, P von Allmen	277	2002
Tunnel field-effect transistors in 2-D transition metal dichalcogenide materials H Ilatikhameneh, Y Tan, B Novakovic, G Klimeck, R Rahman, ... IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015	251	2015
Electronic properties of silicon nanowires Y Zheng, C Rivas, R Lake, K Alam, TB Boykin, G Klimeck IEEE transactions on electron devices 52 (6), 1097-1103, 2005	250	2005
NEMO5: A parallel multiscale nanoelectronics modeling tool S Steiger, M Povolotskyi, HH Park, T Kubis, G Klimeck IEEE Transactions on Nanotechnology 10 (6), 1464-1474, 2011	240	2011
Electron-hole correlations in semiconductor quantum dots with tight-binding wave functions S Lee, L Jönsson, JW Wilkins, GW Bryant, G Klimeck Physical Review B 63 (19), 195318, 2001	238	2001
On the validity of the parabolic effective-mass approximation for the IV calculation of silicon nanowire transistors J Wang, A Rahman, A Ghosh, G Klimeck, M Lundstrom IEEE Transactions on Electron Devices 52 (7), 1589-1595, 2005	231	2005

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