Članki z zahtevami za javni dostop - Dr. Rekha ChaudharyVeč o tem
Ni na voljo nikjer: 7
Comprehensive review on electrical noise analysis of TFET structures
S Chander, SK Sinha, R Chaudhary
Superlattices and Microstructures 161, 107101, 2022
Zahteve: Department of Science & Technology, India
Effect of noise components on L-shaped and T-shaped heterojunction tunnel field effect transistors
S Chander, SK Sinha, R Chaudhary, R Goswami
Semiconductor Science and Technology 37 (7), 075011, 2022
Zahteve: Department of Science & Technology, India
Simulation study of multi-source hetero-junction tfet-based capacitor less 1t dram for low power applications
S Chander, SK Sinha, R Chaudhary
Materials Science and Engineering: B 300, 117080, 2024
Zahteve: Department of Science & Technology, India
Prospects and challenges of different geometries of TFET devices for IoT applications
S Chander, SK Sinha, R Chaudhary
Nanoscience & Nanotechnology-Asia 13 (4), 47-56, 2023
Zahteve: Department of Science & Technology, India
Simulation study of conventional hetero-junction tunnel field effect transistor for IoT applications
S Chander, R Chaudhary, SK Sinha
AIP Conference Proceedings 2986 (1), 2024
Zahteve: Department of Science & Technology, India
Impact of Gaussian Traps on the Characteristics of L-shaped Tunnel Field-effect Transistor
S Chander, SK Sinha, R Chaudhary
Micro and Nanosystems 15 (4), 269-275, 2023
Zahteve: Department of Science & Technology, India
Simulation of dual-gate SOI MOSFET with different dielectric layers
J Yadav, R Chaudhary, R Mukhiya, R Sharma, VK Khanna
AIP Conference Proceedings 1724 (1), 2016
Zahteve: Council of Scientific and Industrial Research, India
Na voljo nekje: 9
Ge-source based L-shaped tunnel field effect transistor for low power switching application
S Chander, SK Sinha, R Chaudhary, A Singh
Silicon, 1-14, 2021
Zahteve: Department of Science & Technology, India
Fabrication and characterisation of Al gate n‐metal–oxide–semiconductor field‐effect transistor, on‐chip fabricated with silicon nitride ion‐sensitive field‐effect …
R Chaudhary, A Sharma, S Sinha, J Yadav, R Sharma, R Mukhiya, ...
IET Computers & Digital Techniques 10 (5), 268-272, 2016
Zahteve: Council of Scientific and Industrial Research, India
Investigation of noise characteristics in gate-source overlap tunnel field-effect transistor
SK Sinha, S Chander, R Chaudhary
Silicon 14 (16), 10661-10668, 2022
Zahteve: Department of Science & Technology, India
Simulation and characterization of dual-gate SOI MOSFET, on-chip fabricated with ISFET
J Yadav, S Sinha, A Sharma, R Chaudhary, R Mukhiya, R Sharma, ...
2015 19th International Symposium on VLSI Design and Test, 1-5, 2015
Zahteve: Council of Scientific and Industrial Research, India
Fabrication and characterization of Al gate n-MOSFET, on-chip fabricated with Si3N4ISFET
R Chaudhary, A Sharma, S Sinha, J Yadav, R Sharma, R Mukhiya, ...
2015 19th International Symposium on VLSI Design and Test, 1-4, 2015
Zahteve: Council of Scientific and Industrial Research, India
Simulation Study of Hetero-Junction Single Gate Extended Source TFET
S Singh, SG Roy, A Kumari, S Chander, SK Sinha, R Chaudhary
Journal of Physics: Conference Series 2325 (1), 012020, 2022
Zahteve: Department of Science & Technology, India
TCAD analysis of tunnel field effect transistor using Ge material for low power application
S Chander, R Chaudhary, SK Sinha
Materials Today: Proceedings 50, 2398-2403, 2022
Zahteve: Department of Science & Technology, India
Impact of low frequency noise source over tunnel field effect transistor in nano regime
S Chander, R Chaudhary, SK Sinha
2021 International Conference on Recent Trends on Electronics, Information …, 2021
Zahteve: Department of Science & Technology, India
NCTFET Device for Low Power VLSI Application
ML Naidu, MV Patnaik, SK Sinha, S Chander, R Chaudhary
2023 International Conference on Sustainable Computing and Smart Systems …, 2023
Zahteve: Department of Science & Technology, India
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