Članki z zahtevami za javni dostop - bing xieVeč o tem
Ni na voljo nikjer: 32
Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed Measurement
M Wang, D Yan, C Zhang, B Xie, CP Wen, J Wang, Y Hao, W Wu, B Shen
IEEE Electron Device Letters 35 (11), 1094-1096, 2014
Zahteve: National Natural Science Foundation of China
A GaN HEMT structure allowing self-terminated, plasma-free etching for high-uniformity, high-mobility enhancement-mode devices
S Lin, M Wang, F Sang, M Tao, CP Wen, B Xie, M Yu, J Wang, Y Hao, ...
IEEE Electron Device Letters 37 (4), 377-380, 2016
Zahteve: National Natural Science Foundation of China
Summary-based context-sensitive data-dependence analysis in presence of callbacks
H Tang, X Wang, L Zhang, B Xie, L Zhang, H Mei
Proceedings of the 42Nd Annual ACM SIGPLAN-SIGACT Symposium on Principles of …, 2015
Zahteve: National Natural Science Foundation of China
Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 1010 High On/Off Current Ratio and Low Specific On-Resistance
Y Li, M Wang, R Yin, J Zhang, M Tao, B Xie, Y Hao, X Yang, CP Wen, ...
IEEE Electron Device Letters 41 (3), 329-332, 2020
Zahteve: National Natural Science Foundation of China
Demonstration of normally-off recess-gated AlGaN/GaN MOSFET using GaN cap layer as recess mask
Z Xu, J Wang, J Liu, C Jin, Y Cai, Z Yang, M Wang, M Yu, B Xie, W Wu, ...
IEEE Electron Device Letters 35 (12), 1197-1199, 2014
Zahteve: National Natural Science Foundation of China
Characterization of 880 V normally off GaN MOSHEMT on silicon substrate fabricated with a plasma-free, self-terminated gate recess process
M Tao, S Liu, B Xie, CP Wen, J Wang, Y Hao, W Wu, K Cheng, B Shen, ...
IEEE Transactions on Electron Devices 65 (4), 1453-1457, 2018
Zahteve: National Natural Science Foundation of China
Low ON-Resistance GaN Schottky Barrier Diode With High Uniformity Using LPCVD Si3N4 Compatible Self-Terminated, Low Damage Anode Recess …
J Gao, Y Jin, B Xie, CP Wen, Y Hao, B Shen, M Wang
IEEE Electron Device Letters 39 (6), 859-862, 2018
Zahteve: National Natural Science Foundation of China
Temperature dependence of the surface-and buffer-induced current collapse in GaN high-electron mobility transistors on Si substrate
C Zhang, M Wang, B Xie, CP Wen, J Wang, Y Hao, W Wu, KJ Chen, ...
IEEE Transactions on electron devices 62 (8), 2475-2480, 2015
Zahteve: National Natural Science Foundation of China
Recommending relevant projects via user behaviour: an exploratory study on github
L Zhang, Y Zou, B Xie, Z Zhu
Proceedings of the 1st International Workshop on Crowd-based Software …, 2014
Zahteve: National Natural Science Foundation of China
Cora: Decomposing and describing tangled code changes for reviewer
M Wang, Z Lin, Y Zou, B Xie
2019 34th IEEE/ACM International Conference on Automated Software …, 2019
Zahteve: National Natural Science Foundation of China
Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With A/mm Leakage Current and ON/OFF Current Ratio
Z Xu, J Wang, Y Cai, J Liu, C Jin, Z Yang, M Wang, M Yu, B Xie, W Wu, ...
IEEE Electron Device Letters 35 (12), 1200-1202, 2014
Zahteve: National Natural Science Foundation of China
Gate-Recessed Normally OFF GaN MOSHEMT With High-Temperature Oxidation/Wet Etching Using LPCVD Si3N4 as the Mask
J Gao, Y Jin, Y Hao, B Xie, CP Wen, B Shen, M Wang
IEEE Transactions on Electron Devices 65 (5), 1728-1733, 2018
Zahteve: National Natural Science Foundation of China
Improving software text retrieval using conceptual knowledge in source code
Z Lin, Y Zou, J Zhao, B Xie
2017 32nd IEEE/ACM International Conference on Automated Software …, 2017
Zahteve: National Natural Science Foundation of China
Reduction of current collapse in GaN high-electron mobility transistors using a repeated ozone oxidation and wet surface treatment
S Lin, M Wang, B Xie, CP Wen, M Yu, J Wang, Y Hao, W Wu, S Huang, ...
IEEE Electron Device Letters 36 (8), 757-759, 2015
Zahteve: National Natural Science Foundation of China
Graph neural network based collaborative filtering for API usage recommendation
C Ling, Y Zou, B Xie
2021 IEEE International Conference on Software Analysis, Evolution and …, 2021
Zahteve: National Natural Science Foundation of China
Seqcare: Sequential training with external medical knowledge graph for diagnosis prediction in healthcare data
Y Xu, X Chu, K Yang, Z Wang, P Zou, H Ding, J Zhao, Y Wang, B Xie
Proceedings of the ACM Web Conference 2023, 2819-2830, 2023
Zahteve: National Natural Science Foundation of China
Hydrogen-modulated step graded junction termination extension in GaN vertical pn diodes
W Lin, M Wang, R Yin, J Wei, CP Wen, B Xie, Y Hao, B Shen
IEEE Electron Device Letters 42 (8), 1124-1127, 2021
Zahteve: National Natural Science Foundation of China
Probabilistic-mismatch anomaly detection: do one’s medications match with the diagnoses
L Zhang, X Li, H Liu, J Mei, G Hu, J Zhao, Y Zou, B Xie, G Xie
2016 IEEE 16th International Conference on Data Mining (ICDM), 659-668, 2016
Zahteve: National Natural Science Foundation of China
Lda-reg: Knowledge driven regularization using external corpora
K Yang, Z Luo, J Gao, J Zhao, BC Ooi, B Xie
IEEE Transactions on Knowledge and Data Engineering 34 (12), 5840-5853, 2021
Zahteve: National Research Foundation, Singapore
Buffer-induced time-dependent OFF-state leakage in AlGaN/GaN high electron mobility transistors on silicon
M Tao, M Wang, S Liu, B Xie, M Yu, CP Wen, J Wang, Y Hao, W Wu, ...
IEEE Transactions on Electron Devices 63 (12), 4860-4864, 2016
Zahteve: National Natural Science Foundation of China
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