A new charge pump without degradation in threshold voltage due to body effect [memory applications] J Shin, IY Chung, YJ Park, HS Min IEEE Journal of Solid-State Circuits 35 (8), 1227-1230, 2000 | 296 | 2000 |
A three-dimensional simulation of quantum transport in silicon nanowire transistor in the presence of electron-phonon interactions S Jin, YJ Park, HS Min Journal of Applied Physics 99 (12), 123719, 2006 | 292 | 2006 |
A proposal on an optimized device structure with experimental studies on recent devices for the DRAM cell transistor MJ Lee, S Jin, CK Baek, SM Hong, SY Park, HH Park, SD Lee, SW Chung, ... IEEE Transactions on Electron Devices 54 (12), 3325-3335, 2007 | 277 | 2007 |
Thickness-dependent thermal resistance of a transparent glass heater with a single-walled carbon nanotube coating TJ Kang, T Kim, SM Seo, YJ Park, YH Kim Carbon 49 (4), 1087-1093, 2011 | 176 | 2011 |
A new SOI inverter for low power applications IY Chung, YJ Park, HS Min SOI Conference, 1996. Proceedings., 1996 IEEE International, 20-21, 1996 | 119 | 1996 |
An extended proof of the Ramo-Shockley theorem YJP Hunsuk Kim, H.S. Min, T.W. Tang Solid-Store Electronics 34 (11), 1251-1253, 1991 | 118* | 1991 |
70-nm impact-ionization metal-oxide-semiconductor (I-MOS) devices integrated with tunneling field-effect transistors (TFETs) WY Choi, JY Song, JD Lee, YJ Park, BG Park Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International …, 2005 | 105 | 2005 |
Electron mobility behavior in extremely thin SOI MOSFET's JH Choi, YJ Park, HS Min IEEE Electron Device Letters 16 (11), 527-529, 1995 | 104 | 1995 |
A 5-Gb/s 0.25-/spl mu/m CMOS jitter-tolerant variable-interval oversampling clock/data recovery circuit SH Lee, MS Hwang, Y Choi, S Kim, Y Moon, BJ Lee, DK Jeong, W Kim, ... IEEE Journal of Solid-State Circuits 37 (12), 1822-1830, 2002 | 100 | 2002 |
100-nm n-/p-channel I-MOS using a novel self-aligned structure WY Choi, JY Song, JD Lee, YJ Park, BG Park IEEE electron device letters 26 (4), 261-263, 2005 | 95 | 2005 |
Hydrogen-atom-mediated electrochemistry JY Lee, JG Lee, SH Lee, M Seo, L Piao, JH Bae, SY Lim, YJ Park, ... Nature communications 4, 2766, 2013 | 90 | 2013 |
Optical identification tag, reader and system S Kwon, Y Park, S Kim US Patent App. 12/530,367, 2010 | 76 | 2010 |
Chang KW. HJ Lee, SJ Hong, CH Choi, EK Kim, HY Yoon, HY Yang, MJ Cho, ... J Korean Acad Oral Health 37 (3), 117-118, 2013 | 74* | 2013 |
Carbon nanotube-based dual-mode biosensor for electrical and surface plasmon resonance measurements J Oh, YW Chang, HJ Kim, S Yoo, DJ Kim, S Im, YJ Park, D Kim, KH Yoo Nano letters 10 (8), 2755-2760, 2010 | 72 | 2010 |
Multi-order dynamic range DNA sensor using a gold decorated SWCNT random network JW Ko, JM Woo, A Jinhong, JH Cheon, JH Lim, SH Kim, H Chun, E Kim, ... Acs Nano 5 (6), 4365-4372, 2011 | 69 | 2011 |
A time dependent hydrodynamic device simulator SNU-2D with new discretization scheme and algorithm WS Choi, JG Ahn, YJ Park, HS Min, CG Hwang IEEE transactions on computer-aided design of integrated circuits and …, 1994 | 66 | 1994 |
Modeling the substrate effect in interconnect line characteristics of high-speed VLSI circuits JK Wee, YJ Park, HS Min, DH Cho, MH Seung, HS Park IEEE transactions on microwave theory and techniques 46 (10), 1436-1443, 1998 | 61 | 1998 |
Analysis of body bias effect with PD-SOI for analog and RF applications H Lee, H Nah, JH Lee, DG Kang, YJ Park, HS Min Solid-State Electronics 46 (8), 1169-1176, 2002 | 57 | 2002 |
Multi-functional user interface for electronic devices Y Park US Patent 7,859,514, 2010 | 55 | 2010 |
A novel biasing scheme for I-MOS (impact-ionization MOS) devices WY Choi, JY Song, JD Lee, YJ Park, BG Park IEEE transactions on nanotechnology 4 (3), 322-325, 2005 | 52 | 2005 |