Članki z zahtevami za javni dostop - Han Wui ThenVeč o tem
Ni na voljo nikjer: 1
Challenges and Future Trends
P Le Fèvre, G Haynes, KK Leong, V Odnoblyudov, C Basceri, HW Then, ...
GaN Technology: Materials, Manufacturing, Devices and Design for Power …, 2024
Zahteve: European Commission
Na voljo nekje: 6
Prospects for wide bandgap and ultrawide bandgap CMOS devices
SJ Bader, H Lee, R Chaudhuri, S Huang, A Hickman, A Molnar, HG Xing, ...
IEEE Transactions on Electron Devices 67 (10), 4010-4020, 2020
Zahteve: US National Science Foundation, US Department of Defense
Regrowth-free GaN-based complementary logic on a Si substrate
N Chowdhury, Q Xie, M Yuan, K Cheng, HW Then, T Palacios
IEEE Electron Device Letters 41 (6), 820-823, 2020
Zahteve: US National Aeronautics and Space Administration
Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas
SJ Bader, R Chaudhuri, K Nomoto, A Hickman, Z Chen, HW Then, ...
IEEE Electron Device Letters 39 (12), 1848-1851, 2018
Zahteve: US National Science Foundation, US Department of Defense
GaN/AlN p-channel HFETs with Imax >420 mA/mm and ~20 GHz fT / fMAX
K Nomoto, R Chaudhuri, SJ Bader, L Li, A Hickman, S Huang, H Lee, ...
2020 IEEE International Electron Devices Meeting (IEDM), 8.3. 1-8.3. 4, 2020
Zahteve: US National Science Foundation, US Department of Defense
GaN/AlN Schottky-gate p-channel HFETs with InGaN contacts and 100 mA/mm on-current
SJ Bader, R Chaudhuri, A Hickman, K Nomoto, S Bharadwaj, HW Then, ...
2019 IEEE International Electron Devices Meeting (IEDM), 4.5. 1-4.5. 4, 2019
Zahteve: US National Science Foundation, US Department of Defense
Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas
SJ Bader, R Chaudhuri, MF Schubert, HW Then, HG Xing, D Jena
Applied Physics Letters 114 (25), 2019
Zahteve: US National Science Foundation, US Department of Defense
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