Michael Kneissl

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Soavtorji

Markus WeyersDept. Head Materials Technology, Ferdinand-Braun-InstitutPreverjeni e-poštni naslov na fbh-berlin.de
Martin GuttmannFerdinand-Braun-Institut & Institute of Solid State Physics, Technische Universität BerlinPreverjeni e-poštni naslov na physik.tu-berlin.de
Frank Mehnkeams OSRAMPreverjeni e-poštni naslov na ams-osram.com
Luca Sulmoniscientist at ABB SwitzerlandPreverjeni e-poštni naslov na ch.abb.com
Patrick VogtPrivatdozent, Technische Universität Chemnitz, Institut für PhysikPreverjeni e-poštni naslov na physik.tu-berlin.de
Markus PristovsekProf. Nagoya UniversityPreverjeni e-poštni naslov na imass.nagoya-u.ac.jp
Johannes GlaabFerdinand-Braun-Institut gGmbH, Leibniz-Institut für HöchstfrequenztechnikPreverjeni e-poštni naslov na fbh-berlin.de
Norman SusiloTechnische Universität BerlinPreverjeni e-poštni naslov na physik.tu-berlin.de
William S. WongUniversity of WaterlooPreverjeni e-poštni naslov na uwaterloo.ca
Christoph ReichPHD student, Technische Universität BerlinPreverjeni e-poštni naslov na physik.tu-berlin.de
Ute ZeimerPreverjeni e-poštni naslov na fbh-berlin.de
Sylvia HagedornFerdinand-Braun-InstitutPreverjeni e-poštni naslov na fbh-berlin.de
Chris G. Van de WalleProfessor of Materials, University of California, Santa BarbaraPreverjeni e-poštni naslov na mrl.ucsb.edu
Martin FrentrupUniversity of CambridgePreverjeni e-poštni naslov na cam.ac.uk
Ulrich SchwarzProfessor, TU ChemnitzPreverjeni e-poštni naslov na physik.tu-chemnitz.de
Dr. Jan RuschelFerdinand-Braun-InstitutPreverjeni e-poštni naslov na FBH-Berlin.de
Matthew McCluskeyProfessor of Physics, Washington State UniversityPreverjeni e-poštni naslov na wsu.edu
Anton MuhinPhD, TU-BerlinPreverjeni e-poštni naslov na physik.tu-berlin.de
Matteo MeneghiniFull Professor at the University of PadovaPreverjeni e-poštni naslov na dei.unipd.it
Gaudenzio MeneghessoUniversity of Padova, Dept. of Information EngineeringPreverjeni e-poštni naslov na dei.unipd.it

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Michael Kneissl

Professor, Institute of Solid State Physics, TU Berlin / Ferdinand-Braun-Institut (FBH), Berlin

Preverjeni e-poštni naslov na physik.tu-berlin.de - Domača stran

Nanophotonics UV LEDs laser diodes epitaxy III-nitrides


Naslov Razvrsti po navedbah Razvrsti po letniku Razvrsti po naslovu	Navedeno Navedeno	Leto
The emergence and prospects of deep-ultraviolet light-emitting diode technologies M Kneissl, TY Seong, J Han, H Amano nature photonics 13 (4), 233-244, 2019	1172	2019
Advances in group III-nitride-based deep UV light-emitting diode technology M Kneissl, T Kolbe, C Chua, V Kueller, N Lobo, J Stellmach, A Knauer, ... Semiconductor Science and Technology 26 (1), 014036, 2010	819	2010
Application of GaN-based ultraviolet-C light emitting diodes–UV LEDs–for water disinfection MA Würtele, T Kolbe, M Lipsz, A Külberg, M Weyers, M Kneissl, M Jekel Water research 45 (3), 1481-1489, 2011	539	2011
Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off WS Wong, T Sands, NW Cheung, M Kneissl, DP Bour, P Mei, LT Romano, ... Applied physics letters 75 (10), 1360-1362, 1999	484	1999
The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020	482	2020
III-Nitride ultraviolet emitters M Kneissl, J Rass Springer Series in Materials Science, 2016	464	2016
Unidirectional lasing from InGaN multiple-quantum-well spiral-shaped micropillars GD Chern, HE Tureci, AD Stone, RK Chang, M Kneissl, NM Johnson Applied Physics Letters 83 (9), 1710-1712, 2003	347	2003
Methods for cleaving facets in III-V nitrides grown on c-face sapphire substrates TJ Cervantes, LT Romano, MA Kneissl US Patent 6,379,985, 2002	305	2002
Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure MA Kneissl US Patent 7,751,455, 2010	273	2010
light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off WS Wong, T Sands, NW Cheung, M Kneissl, DP Bour, P Mei, LT Romano, ... Applied Physics Letters 77 (18), 2822-2824, 2000	259	2000
Metastability of oxygen donors in AlGaN MD McCluskey, NM Johnson, CG Van de Walle, DP Bour, M Kneissl, ... Physical Review Letters 80 (18), 4008, 1998	236	1998
AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire N Susilo, S Hagedorn, D Jaeger, H Miyake, U Zeimer, C Reich, ... Applied Physics Letters 112 (4), 2018	224	2018
Ultraviolet semiconductor laser diodes on bulk AlN M Kneissl, Z Yang, M Teepe, C Knollenberg, O Schmidt, P Kiesel, ... Journal of Applied Physics 101 (12), 2007	204	2007
Method for nitride based laser diode with growth substrate removed using an intermediate substrate MA Kneissl, DP Bour, P Mei, LT Romano US Patent 6,365,429, 2002	202	2002
Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells JE Northrup, CL Chua, Z Yang, T Wunderer, M Kneissl, NM Johnson, ... Applied Physics Letters 100 (2), 2012	198	2012
Method of fabricating GAN semiconductor structures using laser-assisted epitaxial liftoff CL Chua, MA Kneissl, DP Bour US Patent 6,455,340, 2002	198	2002
Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials WS Wong, MA Kneissl US Patent 6,562,648, 2003	197	2003
Optical polarization characteristics of ultraviolet (In)(Al) GaN multiple quantum well light emitting diodes T Kolbe, A Knauer, C Chua, Z Yang, S Einfeldt, P Vogt, NM Johnson, ... Applied Physics Letters 97 (17), 2010	195	2010
Current-injection spiral-shaped microcavity disk laser diodes with unidirectional emission M Kneissl, M Teepe, N Miyashita, NM Johnson, GD Chern, RK Chang Applied Physics Letters 84 (14), 2485-2487, 2004	179	2004
Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells T Wernicke, L Schade, C Netzel, J Rass, V Hoffmann, S Ploch, A Knauer, ... Semiconductor science and technology 27 (2), 024014, 2012	172	2012

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