| Gallium OXIDE: Properties and applica 498 a review S Stepanov, V Nikolaev, V Bougrov, A Romanov Rev. Adv. Mater. Sci 44, 63-86, 2016 | 866 | 2016 |
| Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe V Bougrov, ME Levinshtein, SL Rumyantsev, A Zubrilov, MS Shur Bougrov, ME Levinshtein, SL Rumyantsev, A. Zubrilov.− NY: Wiley, 1-50, 2001 | 486 | 2001 |
| Growth and characterization of β-Ga2O3 crystals VI Nikolaev, V Maslov, SI Stepanov, AI Pechnikov, V Krymov, IP Nikitina, ... Journal of Crystal Growth 457, 132-136, 2017 | 75 | 2017 |
| Epitaxial growth of (2 01) β-Ga2O3 on (0001) sapphire substrates by halide vapour phase epitaxy VI Nikolaev, AI Pechnikov, SI Stepanov, IP Nikitina, AN Smirnov, ... Materials Science in Semiconductor Processing 47, 16-19, 2016 | 72 | 2016 |
| Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition S Suihkonen, T Lang, O Svensk, J Sormunen, PT Törmä, M Sopanen, ... Journal of crystal growth 300 (2), 324-329, 2007 | 51 | 2007 |
| Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs PT Törmä, O Svensk, M Ali, S Suihkonen, M Sopanen, MA Odnoblyudov, ... Journal of Crystal Growth 310 (23), 5162-5165, 2008 | 46 | 2008 |
| Gallium Nitride (GaN) V Bougrov, M Levinshtein, SL Rumyantsev, A Zubrilov Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe …, 2001 | 44 | 2001 |
| Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers S Stepanov, WN Wang, BS Yavich, V Bougrov, YT Rebane, YG Shreter Materials Research Society Internet Journal of Nitride Semiconductor …, 2001 | 42 | 2001 |
| Effect of growth conditions on electrical properties of Mg-doped p-GaN O Svensk, S Suihkonen, T Lang, H Lipsanen, M Sopanen, ... Journal of crystal growth 298, 811-814, 2007 | 39 | 2007 |
| Light emitting diode with charge asymmetric resonance tunneling YT Rebane, YG Shreter, BS Yavich, VE Bougrov, SI Stepanov, WN Wang physica status solidi (a) 180 (1), 121-126, 2000 | 38 | 2000 |
| On improving the radiation resistance of gallium oxide for space applications DA Bauman, AI Borodkin, AA Petrenko, DI Panov, AV Kremleva, ... Acta Astronautica 180, 125-129, 2021 | 37 | 2021 |
| Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layer O Svensk, PT Törmä, S Suihkonen, M Ali, H Lipsanen, M Sopanen, ... Journal of Crystal Growth 310 (23), 5154-5157, 2008 | 34 | 2008 |
| High-Power Quantum-Cascade Lasers Emitting in the 8-μm Wavelength Range AV Babichev, VV Dudelev, AG Gladyshev, DA Mikhailov, AS Kurochkin, ... Technical Physics Letters 45, 735-738, 2019 | 33 | 2019 |
| Non-equilibrium grain boundaries with excess energy in graphene AE Romanov, AL Kolesnikova, TS Orlova, I Hussainova, VE Bougrov, ... Carbon 81, 223-231, 2015 | 33 | 2015 |
| Multistep method for threading dislocation density reduction in MOCVD grown GaN epilayers T Lang, MA Odnoblyudov, VE Bougrov, AE Romanov, S Suihkonen, ... physica status solidi (a) 203 (10), R76-R78, 2006 | 33 | 2006 |
| Morphology optimization of MOCVD-grown GaN nucleation layers by the multistep technique T Lang, M Odnoblyudov, V Bougrov, S Suihkonen, M Sopanen, ... Journal of crystal growth 292 (1), 26-32, 2006 | 32 | 2006 |
| The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency S Suihkonen, O Svensk, T Lang, H Lipsanen, MA Odnoblyudov, ... Journal of crystal growth 298, 740-743, 2007 | 31 | 2007 |
| Optical confinement and threshold currents in III–V nitride heterostructures: Simulation VE Bougrov, AS Zubrilov Journal of applied physics 81 (7), 2952-2956, 1997 | 30 | 1997 |
| 3D laser nano-printing on fibre paves the way for super-focusing of multimode laser radiation GS Sokolovskii, V Melissinaki, KA Fedorova, VV Dudelev, SN Losev, ... Scientific Reports 8 (1), 14618, 2018 | 29 | 2018 |
| Room temperature lasing of multi-stage quantum-cascade lasers at 8 μm wavelength AV Babichev, AG Gladyshev, AS Kurochkin, ES Kolodeznyi, ... Semiconductors 52, 1082-1085, 2018 | 29 | 2018 |
Aleksei RomanovITMO UniversityPreverjeni e-poštni naslov na niuitmo.ru