| SiGe HBTs and BiCMOS technology for present and future millimeter-wave systems T Zimmer, J Böck, F Buchali, P Chevalier, M Collisi, B Debaillie, M Deng, ... IEEE Journal of Microwaves 1 (1), 288-298, 2021 | 81 | 2021 |
| Comparison of on-wafer TRL calibration to ISS SOLT calibration with open-short de-embedding up to 500 GHz S Fregonese, M Deng, M De Matos, C Yadav, S Joly, B Plano, C Raya, ... IEEE Transactions on Terahertz Science and Technology 9 (1), 89-97, 2018 | 57 | 2018 |
| On-wafer characterization of silicon transistors up to 500 GHz and analysis of measurement discontinuities between the frequency bands S Fregonese, M Deng, M Potereau, C Ayela, K Aufinger, T Zimmer IEEE Transactions on Microwave Theory and Techniques 66 (7), 3332-3341, 2018 | 48 | 2018 |
| Importance and Requirement of frequency band specific RF probes EM Models in sub-THz and THz Measurements up to 500 GHz C Yadav, M Deng, S Fregonese, M Cabbia, M De Matos, B Plano, ... IEEE Transactions on Terahertz Science and Technology 10 (5), 558-563, 2020 | 34 | 2020 |
| Scalable Compact Modeling of III–V DHBTs: Prospective Figures of Merit Toward Terahertz Operation C Mukherjee, C Raya, B Ardouin, M Deng, S Fregonese, T Zimmer, ... IEEE Transactions on Electron Devices 65 (12), 5357-5364, 2018 | 24 | 2018 |
| Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems C Mukherjee, M Deng, V Nodjiadjim, M Riet, C Mismer, D Guendouz, ... Applied Sciences 11 (5), 2393, 2021 | 23 | 2021 |
| Analysis of High-Frequency Measurement of Transistors Along With Electromagnetic and SPICE Cosimulation S Fregonese, M Cabbia, C Yadav, M Deng, SR Panda, M De Matos, ... IEEE Transactions on Electron Devices 67 (11), 4770-4776, 2020 | 20 | 2020 |
| Small-signal characterization and modelling of 55 nm SiGe BiCMOS HBT up to 325 GHz M Deng, T Quémerais, S Bouvot, D Gloria, P Chevalier, S Lépilliet, ... Solid-State Electronics 129, 150-156, 2017 | 19 | 2017 |
| Silicon Test Structures Design for Sub-THz and THz Measurements M Cabbia, C Yadav, M Deng, S Fregonese, M De Matos, T Zimmer IEEE Transactions on Electron Devices 67 (12), 5639-5645, 2020 | 15 | 2020 |
| Impact of on-Silicon de-embedding test structures and RF probes design in the Sub-THz range C Yadav, M Deng, S Fregonese, M DeMatos, B Plano, T Zimmer 2018 48th European Microwave Conference (EuMC), 21-24, 2018 | 15 | 2018 |
| A Multiscale TCAD Approach for the Simulation of InP DHBTs and the Extraction of Their Transit Times X Wen, C Mukherjee, C Raya, B Ardouin, M Deng, S Frégonèse, ... IEEE Transactions on Electron Devices 66 (12), 5084-5090, 2019 | 13 | 2019 |
| 2D-Graphene Epitaxy on SiC for RF Application: Fabrication, Electrical Characterization and Noise Performance D Fadil, W Wei, M Deng, S Fregonese, W Strupinski, E Pallecchi, H Happy 2018 IEEE/MTT-S International Microwave Symposium-IMS, 228-231, 2018 | 13 | 2018 |
| Millimeter-wave in situ tuner: An efficient solution to extract the noise parameters of SiGe HBTs in the whole 130–170 GHz range M Deng, L Poulain, D Gloria, T Quémerais, P Chevalier, S Lépilliet, ... IEEE Microwave and Wireless Components Letters 24 (9), 649-651, 2014 | 13 | 2014 |
| Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence C Maneux, M Chhandak, M Deng, M Dubourg, L Réveil, G Bordea, ... IEEE International Electron Device Meeting (IEDM), 2021 | 12 | 2021 |
| TCAD and EM co-simulation method to verify SiGe HBT measurements up to 500 GHz SR Panda, S Fregonese, M Deng, A Chakravorty, T Zimmer Solid-State Electronics 174, 107915, 2020 | 12 | 2020 |
| Design of On-Wafer TRL Calibration Kit for InP Technologies Characterization up to 500 GHz M Deng, C Mukherjee, C Yadav, S Fregonese, T Zimmer, M De Matos, ... IEEE Transactions on Electron Devices 67 (12), 5441-5447, 2020 | 12 | 2020 |
| Design of Silicon On-Wafer Sub-THz Calibration Kit M Deng, S Frégonèse, D Céli, P Chevalier, M De Matos, T Zimmer 2017 Mediterranean Microwave Symposium (MMS), 1-4, 2017 | 11 | 2017 |
| Contribution à la caractérisation et la modélisation jusque 325 GHz de transistors HBT des technologies BiCMOS M Deng Lille 1, 2014 | 10 | 2014 |
| Importance of Probe Choice for Extracting Figures of Merit of Advanced mmW Transistors S Fregonese, M De Matos, M Deng, D Céli, N Derrier, T Zimmer IEEE Transactions on Electron Devices 68 (12), 6007-6014, 2021 | 9 | 2021 |
| Performance prediction of InP/GaAsSb double heterojunction bipolar transistors for THz applications X Wen, A Arabhavi, W Quan, O Ostinelli, C Mukherjee, M Deng, ... Journal of Applied Physics 130 (3), 2021 | 9 | 2021 |
sebastien fregoneseCR CNRS, Université de BordeauxPreverjeni e-poštni naslov na ims-bordeaux.fr
