Marko Radosavljevic

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Han Wui ThenIntel CorporationPreverjeni e-poštni naslov na intel.com
Ravi PillarisettyIntel CorporationPreverjeni e-poštni naslov na intel.com
Sansaptak DasguptaHardware Engineer, ApplePreverjeni e-poštni naslov na apple.com
Niloy MukherjeeEugenus, Inc.Preverjeni e-poštni naslov na eugenustech.com
Suman DattaJoseph M. Pettit Chair ProfessorPreverjeni e-poštni naslov na gatech.edu
Paul B FischerIntel CorporationPreverjeni e-poštni naslov na intel.com
Seung Hoon SungSenior research staff of Components Research, Intel CorporationPreverjeni e-poštni naslov na intel.com
Prof. Mantu HudaitAssoc. Prof. of ECE, Virginia Tech; Past: Intel Corporation, Ohio State U, IISc-Bangalore, IIT-KGPPreverjeni e-poštni naslov na vt.edu
Nicole K. ThomasPreverjeni e-poštni naslov na intel.com
Phaedon AvourisIBM Fellow, Emeritus and University of Minnesota, MinneapolisPreverjeni e-poštni naslov na umn.edu
a.t. charlie Johnsonrebecca w bushnell professor of physics and astronomy, university of pennsylvaniaPreverjeni e-poštni naslov na physics.upenn.edu
Pratik KoiralaComponents Research, Intel CorporationPreverjeni e-poštni naslov na intel.com
Joerg AppenzellerProfessor of Electrical and Computer Engineering, Purdue UniversityPreverjeni e-poštni naslov na purdue.edu
Ian A YoungIntel CorporationPreverjeni e-poštni naslov na intel.com
jacques lefebvreUniversité LavalPreverjeni e-poštni naslov na ulaval.ca
Samuel James BaderResearch Engineer, IntelPreverjeni e-poštni naslov na cornell.edu
Philip C. NelsonUniversity of PennsylvaniaPreverjeni e-poštni naslov na physics.upenn.edu
Marcus FreitagIBM T. J. Watson Research CenterPreverjeni e-poštni naslov na us.ibm.com
rahul ramaswamyUniversity at Buffalo, State univeristy of New YorkPreverjeni e-poštni naslov na buffalo.edu
Dmitri E. NikonovDistinguished Engineer, Kepler ComputingPreverjeni e-poštni naslov na intel.com

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Marko Radosavljevic

Intel Corporation

Preverjeni e-poštni naslov na intel.com - Domača stran

semiconductor devices nanotechnology


Naslov Razvrsti po navedbah Razvrsti po letniku Razvrsti po naslovu	Navedeno Navedeno	Leto
Carbon nanotube composites for thermal management MJ Biercuk, MC Llaguno, M Radosavljevic, JK Hyun, AT Johnson, ... Applied Physics Letters 80 (15), 2767-2769, 2002	2471	2002
Group III-N transistors for system on chip (SOC) architecture integrating power management and radio frequency circuits HW Then, R Chau, V Rao, N Mukherjee, M Radosavljevic, R Pillarisetty, ... US Patent 10,290,614, 2019	1492*	2019
Biological physics P Nelson WH Freeman, 2004	1134	2004
Benchmarking nanotechnology for high-performance and low-power logic transistor applications R Chau, S Datta, M Doczy, B Doyle, B Jin, J Kavalieros, A Majumdar, ... IEEE Transactions on Nanotechnology 4 (2), 153-158, 2005	894	2005
Nonvolatile molecular memory elements based on ambipolar nanotube field effect transistors M Radosavljević, M Freitag, KV Thadani, AT Johnson Nano Letters 2 (7), 761-764, 2002	528	2002
Fabrication, characterization, and physics of III–V heterojunction tunneling field effect transistors (H-TFET) for steep sub-threshold swing G Dewey, B Chu-Kung, J Boardman, JM Fastenau, J Kavalieros, R Kotlyar, ... 2011 International electron devices meeting, 33.6. 1-33.6. 4, 2011	453	2011
Tunneling versus thermionic emission in one-dimensional semiconductors J Appenzeller, M Radosavljević, J Knoch, P Avouris Physical review letters 92 (4), 48301, 2004	390	2004
Tri-gate transistor architecture with high-k gate dielectrics, metal gates and strain engineering J Kavalieros, B Doyle, S Datta, G Dewey, M Doczy, B Jin, D Lionberger, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 50-51, 2006	346	2006
Block contact architectures for nanoscale channel transistors M Radosavljevic, A Majumdar, BS Doyle, J Kavalieros, ML Doczy, ... US Patent 7,898,041, 2011	340*	2011
Transistor gate-channel arrangements GW Dewey, R Rios, S Shivaraman, M Radosavljevic, KE Millard, ... US Patent App. 16/080,101, 2019	304	2019
Advanced high-K gate dielectric for high-performance short-channel In_0.7Ga_0.3As quantum well field effect transistors on silicon substrate for low power logic … M Radosavljevic, B Chu-Kung, S Corcoran, G Dewey, MK Hudait, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009	301	2009
Drain voltage scaling in carbon nanotube transistors M Radosavljević, S Heinze, J Tersoff, P Avouris Applied Physics Letters 83, 2435, 2003	269	2003
Block contact architectures for nanoscale channel transistors M Radosavljevic, A Majumdar, BS Doyle, J Kavalieros, ML Doczy, ... US Patent 7,279,375, 2007	223	2007
Block contact architectures for nanoscale channel transistors M Radosavljevic, A Majumdar, BS Doyle, J Kavalieros, ML Doczy, ... US Patent 7,279,375, 2007	223	2007
Application of high-< i> κ</i> gate dielectrics and metal gate electrodes to enable silicon and non-silicon logic nanotechnology R Chau, J Brask, S Datta, G Dewey, M Doczy, B Doyle, J Kavalieros, B Jin, ... Microelectronic engineering 80, 1-6, 2005	222	2005
3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact … HW Then, S Dasgupta, M Radosavljevic, P Agababov, I Ban, R Bristol, ... 2019 IEEE International Electron Devices Meeting (IEDM), 17.3. 1-17.3. 4, 2019	221	2019
CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture M Radosavljevic, R Pillarisetty, G Dewey, N Mukherjee, J Kavalieros, ... US Patent 9,123,567, 2015	213	2015
CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture M Radosavljevic, R Pillarisetty, G Dewey, N Mukherjee, J Kavalieros, ... US Patent 9,123,567, 2015	213	2015
Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to … M Radosavljevic, G Dewey, D Basu, J Boardman, B Chu-Kung, ... 2011 International Electron Devices Meeting, 33.1. 1-33.1. 4, 2011	201	2011
Unexpected scaling of the performance of carbon nanotube Schottky-barrier transistors S Heinze, M Radosavljević, J Tersoff, P Avouris Physical Review B 68 (23), 235418, 2003	194	2003

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