Axel Hoffmann

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Bruno K MeyerJustus Liebig University GiessenPreverjeni e-poštni naslov na mailbox.tu-berlin.de
Christian ThomsenTU BerlinPreverjeni e-poštni naslov na tu-berlin.de
juergen christenProfessor of Physics, Magdeburg UniversityPreverjeni e-poštni naslov na ovgu.de
Markus R. WagnerPaul-Drude-Institut für FestkörperelektronikPreverjeni e-poštni naslov na pdi-berlin.de
Gordon CallsenUniversity of Bremen, Institute of Solid State PhysicsPreverjeni e-poštni naslov na ifp.uni-bremen.de
Nikolay LedentsovVI Systems GmbHPreverjeni e-poštni naslov na v-i-systems.com
Ronny KirsteResearch associate, NCSUPreverjeni e-poštni naslov na ncsu.edu
Matthew R. PhillipsEmeritus Professor of Applied Physics, University of Technology SydneyPreverjeni e-poštni naslov na uts.edu.au
Kazumasa HiramatsuMie University, Emeritus ProfessorePreverjeni e-poštni naslov na elec.mie-u.ac.jp
Sebastian ReparazINSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONAPreverjeni e-poštni naslov na icmab.es
Sergey MaksimenkoBelarusian State University, Research Institute for Nuclear Problems, DirectorPreverjeni e-poštni naslov na bsu.by
Christian NenstielTechnische Universität BerlinPreverjeni e-poštni naslov na physik.tu-berlin.de
Dagmar GerthsenKITPreverjeni e-poštni naslov na kit.edu
Zlatko SitarKobe Steel Distinguished Professor of Materials Science and Engineerign, North Carolina StatePreverjeni e-poštni naslov na ncsu.edu
Wolfgang GehlhoffProf. Dr., Technische Universität BerlinPreverjeni e-poštni naslov na sol.physik.tu-berlin.de
Hiroshi AMANO (天野　浩)Nagoya University (名古屋大学)Preverjeni e-poštni naslov na nuee.nagoya-u.ac.jp
Dietz NikolausGeorgia State UniversityPreverjeni e-poštni naslov na gsu.edu
Andrei SchliwaPrincipal Scientist @ Technische Universität BerlinPreverjeni e-poštni naslov na tu-berlin.de
Anna RodinaChief Scientist, Ioffe InstitutePreverjeni e-poštni naslov na mail.ioffe.ru
Ramon CollazoProfessor of Materials Science and Engineering, NCSUPreverjeni e-poštni naslov na ncsu.edu

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Axel Hoffmann

Institute of Solid State Physics, Technical University of Berlin

Preverjeni e-poštni naslov na tu-berlin.de - Domača stran

Semiconductor physics Nanostructures Devices


Naslov Razvrsti po navedbah Razvrsti po letniku Razvrsti po naslovu	Navedeno Navedeno	Leto
Bound exciton and donor–acceptor pair recombinations in ZnO BK Meyer, H Alves, DM Hofmann, W Kriegseis, D Forster, F Bertram, ... physica status solidi (b) 241 (2), 231-260, 2004	2029	2004
Zinc Oxide: From Fundamental Properties Towards Novel Applications CF Klingshirn, BK Meyer, A Waag, A Hoffmann, J Geurts Springer, 2010	789	2010
Energy relaxation by multiphonon processes in InAs/GaAs quantum dots R Heitz, M Veit, NN Ledentsov, A Hoffmann, D Bimberg, VM Ustinov, ... Physical Review B 56 (16), 10435, 1997	641	1997
Group III nitride semiconductor compounds: physics and applications Clarendon Press, 1998	572*	1998
Nitrogen-related local vibrational modes in ZnO: N A Kaschner, U Haboeck, M Strassburg, M Strassburg, G Kaczmarczyk, ... Applied Physics Letters 80 (11), 1909-1911, 2002	566	2002
Zone-boundary phonons in hexagonal and cubic GaN H Siegle, G Kaczmarczyk, L Filippidis, AP Litvinchuk, A Hoffmann, ... Physical Review B 55 (11), 7000, 1997	395	1997
Behind the weak excitonic emission of ZnO quantum dots: ZnO/Zn (OH) 2 core-shell structure H Zhou, H Alves, DM Hofmann, W Kriegseis, BK Meyer, G Kaczmarczyk, ... Applied physics letters 80 (2), 210-212, 2002	392	2002
Development of advanced high heat flux and plasma-facing materials C Linsmeier, M Rieth, J Aktaa, T Chikada, A Hoffmann, J Hoffmann, ... Nuclear Fusion 57 (9), 092007, 2017	335	2017
Excited states and energy relaxation in stacked InAs/GaAs quantum dots R Heitz, A Kalburge, Q Xie, M Grundmann, P Chen, A Hoffmann, ... Physical Review B 57 (15), 9050, 1998	323	1998
Properties of the yellow luminescence in undoped GaN epitaxial layers DM Hofmann, D Kovalev, G Steude, BK Meyer, A Hoffmann, L Eckey, ... Phys. Rev. B 72 (23), 16702, 1995	322	1995
Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers MR Wagner, G Callsen, JS Reparaz, JH Schulze, R Kirste, M Cobet, ... Physical Review B—Condensed Matter and Materials Physics 84 (3), 035313, 2011	252	2011
Exciton fine structure in undoped GaN epitaxial films D Volm, K Oettinger, T Streibl, D Kovalev, M Ben-Chorin, J Diener, ... Physical Review B 53 (24), 16543, 1996	250	1996
High Si and Ge n-type doping of GaN doping-Limits and impact on stress S Fritze, A Dadgar, H Witte, M Bügler, A Rohrbeck, J Bläsing, A Hoffmann, ... Applied Physics Letters 100 (12), 2012	244	2012
Semiconductor nanostructures D Bimberg Springer, 2008	237	2008
Existence of a phonon bottleneck for excitons in quantum dots R Heitz, H Born, F Guffarth, O Stier, A Schliwa, A Hoffmann, D Bimberg Physical review b 64 (24), 241305, 2001	232	2001
Free excitons in wurtzite GaN AV Rodina, M Dietrich, A Göldner, L Eckey, A Hoffmann, AL Efros, ... Physical Review B 64 (11), 115204, 2001	224	2001
Quantitative determination of hexagonal minority phase in cubic GaN using Raman spectroscopy H Siegle, L Eckey, A Hoffmann, C Thomsen, BK Meyer, D Schikora, ... Solid State Communications 96 (12), 943-949, 1995	204	1995
Interrelation of structural and electronic properties in quantum dots using an eight-band model M Winkelnkemper, A Schliwa, D Bimberg Physical Review B—Condensed Matter and Materials Physics 74 (15), 155322, 2006	202	2006
Optical properties of the nitrogen acceptor in epitaxial ZnO A Zeuner, H Alves, DM Hofmann, BK Meyer, A Hoffmann, U Haboeck, ... physica status solidi (b) 234 (3), R7-R9, 2002	198	2002
Gain studies of (Cd, Zn) Se quantum islands in a ZnSe matrix M Strassburg, V Kutzer, UW Pohl, A Hoffmann, I Broser, NN Ledentsov, ... Applied physics letters 72 (8), 942-944, 1998	189	1998

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