| Electrically erasable phase change memory SR Ovshinsky, SJ Hudgens, W Czubatyj, DA Strand, GC Wicker US Patent 5,166,758, 1992 | 662 | 1992 |
| Method to enhance performance of thermal resistor device C Chiang, GC Wicker US Patent 6,339,544, 2002 | 465 | 2002 |
| Reduced area intersection between electrode and programming element CH Dennison, GC Wicker, TA Lowrey, SJ Hudgens, C Chiang, D Xu US Patent 6,673,700, 2004 | 428 | 2004 |
| Reduced contact area of sidewall conductor GC Wicker US Patent 6,597,009, 2003 | 418 | 2003 |
| Reduced contact area of sidewall conductor GC Wicker US Patent 6,429,064, 2002 | 411 | 2002 |
| Method to enhance performance of thermal resistor device C Chiang, GC Wicker US Patent 6,621,095, 2003 | 402 | 2003 |
| Second-layer phase change memory array on top of a logic device SR Ovshinsky, GC Wicker US Patent 5,714,768, 1998 | 345 | 1998 |
| Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle life SR Ovshinsky, SJ Hudgens, W Czubatyj, DA Strand, GC Wicker US Patent 5,341,328, 1994 | 341 | 1994 |
| Programmable resistance memory arrays with reference cells T Lowrey, GC Wicker US Patent 6,314,014, 2001 | 333 | 2001 |
| Electrically erasable memory elements having improved set resistance stability SR Ovshinsky, SJ Hudgens, W Czubatyj, DA Strand, GC Wicker US Patent 5,414,271, 1995 | 309 | 1995 |
| A comprehensive model of submicron chalcogenide switching devices GC Wicker Wayne State University, 1996 | 248 | 1996 |
| Thin film electro-optical devices SR Ovshinsky, RR Johnson, SJ Hudgens, RW Pryor, GC Wicker, ... US Patent 4,766,471, 1988 | 247 | 1988 |
| Vertically interconnected parallel distributed processor SR Ovshinsky, G Wicker US Patent 5,159,661, 1992 | 228 | 1992 |
| Nonvolatile, High Density, High Performance Phase Change Memory, 1999 G Wicker | 202 | 1997 |
| Integrated drivers for flat panel displays employing chalcogenide logic elements SR Ovshinsky, GC Wicker US Patent 5,694,054, 1997 | 196 | 1997 |
| Electrically programmable memory element with improved contacts T Lowrey, SR Ovshinsky, GC Wicker, PJ Klersy, B Pashmakov, ... US Patent 6,969,866, 2005 | 155 | 2005 |
| Method of programming phase-change memory element T Lowrey, GC Wicker, B Pashmakov, PJ Klersy, SA Kostylev, W Czubatyj US Patent 6,075,719, 2000 | 114 | 2000 |
| Memory device G Wicker, W Czubatyj US Patent 8,344,348, 2013 | 113 | 2013 |
| Programmable matrix array with chalcogenide material T Lowrey, W Parkinson, G Wicker US Patent 7,646,630, 2010 | 108 | 2010 |
| Lateral phase change memory and method therefor GC Wicker US Patent 6,867,425, 2005 | 108 | 2005 |