Članki z zahtevami za javni dostop - pk hurleyVeč o tem
Ni na voljo nikjer: 31
Effects of annealing on top-gated MoS2 transistors with HfO2 dielectric
P Zhao, A Azcatl, P Bolshakov, J Moon, CL Hinkle, PK Hurley, ...
Journal of Vacuum Science & Technology B 35 (1), 2017
Zahteve: US National Science Foundation, Science Foundation Ireland
Half-cycle atomic layer deposition reaction study using O3 and H2O oxidation of Al2O3 on In0. 53Ga0. 47As
B Brennan, M Milojevic, HC Kim, PK Hurley, J Kim, G Hughes, ...
Electrochemical and Solid-State Letters 12 (6), H205, 2009
Zahteve: Science Foundation Ireland
Remote phonon and surface roughness limited universal electron mobility of In0. 53Ga0. 47As surface channel MOSFETs
AM Sonnet, RV Galatage, PK Hurley, E Pelucchi, K Thomas, A Gocalinska, ...
Microelectronic engineering 88 (7), 1083-1086, 2011
Zahteve: Higher Education Authority, Ireland, Science Foundation Ireland
Growth, ambient stability and electrical characterisation of MgO thin films on silicon surfaces
P Casey, E O’Connor, R Long, B Brennan, SA Krasnikov, D O’Connell, ...
Microelectronic engineering 86 (7-9), 1711-1714, 2009
Zahteve: Science Foundation Ireland
Physical, chemical and electrical characterisation of the diffusion of copper in silicon dioxide and prevention via a CuAl alloy barrier layer system
C Byrne, B Brennan, R Lundy, J Bogan, A Brady, YY Gomeniuk, ...
Materials science in semiconductor processing 63, 227-236, 2017
Zahteve: Science Foundation Ireland, Irish Research Council
Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0. 53Ga0. 47As (001)
B Shin, J Cagnon, RD Long, PK Hurley, S Stemmer, PC McIntyre
Electrochemical and Solid-State Letters 12 (8), G40, 2009
Zahteve: Science Foundation Ireland
Evaluation of few-layer MoS2 transistors with a top gate and HfO2 dielectric
CD Young, P Zhao, P Bolshakov-Barrett, A Azcatl, PK Hurley, ...
ECS Transactions 75 (5), 153, 2016
Zahteve: US National Science Foundation, Science Foundation Ireland
Analysis of the breakdown spots spatial distribution in large area MOS structures
E Miranda, E O'Connor, PK Hurley
2010 IEEE International Reliability Physics Symposium, 775-777, 2010
Zahteve: Science Foundation Ireland
Interface state densities, low frequency noise and electron mobility in surface channel In0. 53Ga0. 47As n-MOSFETs with a ZrO2 gate dielectric
MA Negara, N Goel, D Bauza, G Ghibaudo, PK Hurley
Microelectronic engineering 88 (7), 1095-1097, 2011
Zahteve: Science Foundation Ireland
Top-gated MoS2 capacitors and transistors with high-k dielectrics for interface study
P Zhao, A Azcatl, P Bolshakov-Barrett, RM Wallace, CD Young, PK Hurley
2016 International Conference on Microelectronic Test Structures (ICMTS …, 2016
Zahteve: US National Science Foundation
Band offsets at interfaces of (1 0 0) InxGa1− xAs (0⩽ x⩽ 0.53) with Al2O3 and HfO2
VV Afanas’ev, A Stesmans, G Brammertz, A Delabie, S Sionke, ...
Microelectronic engineering 86 (7-9), 1550-1553, 2009
Zahteve: Research Foundation (Flanders), Science Foundation Ireland
Investigation of critical interfaces in few-layer MoS2 field effect transistors with high-k dielectrics
CD Young, P Bolshakov, P Zhao, C Smyth, A Khosravi, PK Hurley, ...
ECS Transactions 80 (1), 219, 2017
Zahteve: US National Science Foundation, US Department of Defense, Science Foundation …
Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0. 53Ga0. 47As MOS capacitors
É O’Connor, K Cherkaoui, S Monaghan, B Sheehan, IM Povey, PK Hurley
Microelectronic Engineering 147, 325-329, 2015
Zahteve: Science Foundation Ireland, European Commission
On the activation of implanted silicon ions in p-In0. 53Ga0. 47As
V Djara, K Cherkaoui, SB Newcomb, K Thomas, E Pelucchi, D O'Connell, ...
Semiconductor Science and Technology 27 (8), 082001, 2012
Zahteve: Science Foundation Ireland
Application of the quadrat counts method to the analysis of the spatial breakdown spots pattern in metal gate/MgO/InP structures
E Miranda, E O’Connor, PK Hurley
Microelectronic engineering 88 (4), 448-451, 2011
Zahteve: Science Foundation Ireland
(NH4) 2S Passivation of High-k/In0. 53Ga0. 47As Interfaces: A Systematic Study of (NH4) 2S Concentration
E O'Connor, B Brennan, R Contreras, M Milojevic, K Cherkaoui, ...
ECS Transactions 28 (1), 231, 2010
Zahteve: Science Foundation Ireland
A spectroscopic method for the evaluation of surface passivation treatments on metal–oxide–semiconductor structures
LA Walsh, PK Hurley, J Lin, E Cockayne, TP O’Regan, JC Woicik, ...
Applied surface science 301, 40-45, 2014
Zahteve: Science Foundation Ireland
Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress
X Saura, D Moix, J Suñé, PK Hurley, E Miranda
Microelectronics Reliability 53 (9-11), 1257-1260, 2013
Zahteve: Science Foundation Ireland, Government of Spain
CVD-grown back-gated MoS2 transistors
C Marquez, N Salazar, F Gity, C Navarro, G Mirabelli, R Duffy, J Galdon, ...
2020 Joint International EUROSOI Workshop and International Conference on …, 2020
Zahteve: Science Foundation Ireland, European Commission
Thermally activated analysis of LaSiOx/Si and GdSiOx/Si structures at cryogenic temperatures
IP Tyagulskii, SI Tyagulskii, AN Nazarov, VS Lysenko, K Cherkaoui, ...
Microelectronic engineering 109, 31-34, 2013
Zahteve: Science Foundation Ireland
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