Sam Vaziri

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Soavtorji

Max C. LemmeProfessor, RWTH Aachen University, Germany, Director, AMO GmbHPreverjeni e-poštni naslov na eld.rwth-aachen.de
Mikael ÖstlingKTH Royal Institute of TechnologyPreverjeni e-poštni naslov na kth.se
Anderson David SmithAssociate Professor, Chalmers University of TechnologyPreverjeni e-poštni naslov na kth.se
Eric PopPease-Ye Professor of Electrical Engineering, MSE, AP at Stanford & SLACPreverjeni e-poštni naslov na stanford.edu
Fredrik ForsbergKTH Royal Institute of TechnologyPreverjeni e-poštni naslov na ee.kth.se
Eilam YalonTechnion, Israel Institute of TechnologyPreverjeni e-poštni naslov na technion.ac.il
Mikael SternerPh.D. from KTH Royal Institute of TechnologyPreverjeni e-poštni naslov na kth.se
Dr. Miguel Muñoz Rojo - ERC granteeTenured permanent researcher (CSIC) & Associate Prof. (University of Twente)Preverjeni e-poštni naslov na csic.es
Alan PaussaPreverjeni e-poštni naslov na uniud.it
Stephan SchröderSenseairPreverjeni e-poštni naslov na senseair.com
Yury Illarionov (Юрий Юрьевич Илла...Southern University of Science and Technology (SUSTech)Preverjeni e-poštni naslov na sustech.edu.cn
Saul RodriguezAssociate Professor, KTH Royal Institute of Technology, SwedenPreverjeni e-poštni naslov na kth.se
Melkamu BeleteResearch Scientist at RWTH Aachen University, Faculty of Electrical Engineering and InfoPreverjeni e-poštni naslov na eld.rwth-aachen.de
Fei YeResearcher, Functional Materials, KTH Royal Institute of TechnologyPreverjeni e-poštni naslov na kth.se
Mamoun MuhammedRoyal Institute of TechnologyPreverjeni e-poštni naslov na kth.se
Ana RusuProfessor of Electronic Circuits and Systems, KTH Royal Institute of Technology, EECS SchoolPreverjeni e-poštni naslov na kth.se
Francesco DriussiUniversità degli Studi di UdinePreverjeni e-poštni naslov na uniud.it
stefan wagnerBlack Semiconductor GmbHPreverjeni e-poštni naslov na blacksemicon.de
sebastien fregoneseCR CNRS, Université de BordeauxPreverjeni e-poštni naslov na ims-bordeaux.fr
Karim ElgammalKTH Royal Institute of Technology and Swedish e-Science Research Centre (SeRC)Preverjeni e-poštni naslov na kth.se

Spremljaj

Sam Vaziri

Stanford University

Preverjeni e-poštni naslov na stanford.edu


Naslov Razvrsti po navedbah Razvrsti po letniku Razvrsti po naslovu	Navedeno Navedeno	Leto
Efficient inkjet printing of graphene J Li, F Ye, S Vaziri, M Muhammed, MC Lemme, M Östling Adv. Mater 25 (29), 3985-3992, 2013	596	2013
Electromechanical piezoresistive sensing in suspended graphene membranes AD Smith, F Niklaus, A Paussa, S Vaziri, AC Fischer, M Sterner, ... Nano letters 13 (7), 3237-3242, 2013	451	2013
Resistive graphene humidity sensors with rapid and direct electrical readout AD Smith, K Elgammal, F Niklaus, A Delin, AC Fischer, S Vaziri, ... Nanoscale 7 (45), 19099-19109, 2015	364	2015
Residual metallic contamination of transferred chemical vapor deposited graphene G Lupina, J Kitzmann, I Costina, M Lukosius, C Wenger, A Wolff, S Vaziri, ... ACS nano 9 (5), 4776-4785, 2015	328	2015
Inkjet Printing of MoS₂ J Li, MM Naiini, S Vaziri, MC Lemme, M Östling Advanced Functional Materials 24 (41), 6524-6531, 2014	301	2014
A graphene-based hot electron transistor S Vaziri, G Lupina, C Henkel, AD Smith, M Östling, J Dabrowski, G Lippert, ... Nano Letters, 2013	286	2013
High-performance flexible nanoscale transistors based on transition metal dichalcogenides A Daus, S Vaziri, V Chen, Ç Köroğlu, RW Grady, CS Bailey, HR Lee, ... Nature Electronics 4 (7), 495-501, 2021	208	2021
High-specific-power flexible transition metal dichalcogenide solar cells KCS Koosha Nassiri Nazif, Alwin Daus, Jiho Hong, Nayeun Lee, Sam Vaziri ... Nature Communications 12, 7034, 2021	166	2021
Piezoresistive properties of suspended graphene membranes under uniaxial and biaxial strain in nanoelectromechanical pressure sensors AD Smith, F Niklaus, A Paussa, S Schröder, AC Fischer, M Sterner, ... ACS nano 10 (11), 9879-9886, 2016	154	2016
Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials S Vaziri, E Yalon, M Muñoz Rojo, SV Suryavanshi, H Zhang, ... Science advances 5 (8), eaax1325, 2019	142	2019
Uncovering the Effects of Metal Contacts on Monolayer MoS₂ K Schauble, D Zakhidov, E Yalon, S Deshmukh, RW Grady, KA Cooley, ... ACS nano 14 (11), 14798-14808, 2020	137	2020
Chemical vapor deposited graphene: From synthesis to applications S Kataria, S Wagner, J Ruhkopf, A Gahoi, H Pandey, R Bornemann, ... physica status solidi (a) 211 (11), 2439-2449, 2014	125	2014
Pressure sensors based on suspended graphene membranes AD Smith, S Vaziri, F Niklaus, AC Fischer, M Sterner, A Delin, M Östling, ... Solid-State Electronics 88, 89-94, 2013	105	2013
A Comprehensive Graphene FET Model for Circuit Design S Rodriguez, S Vaziri, A Smith, S Frégonèse, M Ostling, MC Lemme, ... IEEE, 2014	103	2014
Strain-Enhanced Mobility of Monolayer MoS₂ IM Datye, A Daus, RW Grady, K Brenner, S Vaziri, E Pop Nano Letters 22 (20), 8052-8059, 2022	100	2022
A simple route towards high-concentration surfactant-free graphene dispersions J Li, F Ye, S Vaziri, M Muhammed, MC Lemme, M Östling Carbon 50 (8), 3113-3116, 2012	73	2012
Bilayer insulator tunnel barriers for graphene-based vertical hot-electron transistors S Vaziri, M Belete, ED Litta, AD Smith, G Lupina, MC Lemme, M Östling Nanoscale 7 (30), 13096-13104, 2015	63	2015
Bias-temperature instability in single-layer graphene field-effect transistors YY Illarionov, AD Smith, S Vaziri, M Ostling, T Mueller, MC Lemme, ... Applied Physics Letters 105 (14), 2014	57	2014
Going ballistic: Graphene hot electron transistors S Vaziri, AD Smith, M Östling, G Lupina, J Dabrowski, G Lippert, W Mehr, ... Solid State Communications 224, 64-75, 2015	47	2015
Hot-carrier degradation and bias-temperature instability in single-layer graphene field-effect transistors: Similarities and differences Y Illarionov, A Smith, S Vaziri, M Ostling, T Mueller, M Lemme, T Grasser IEEE Transactions on electron devices 62 (11), 3876-3881, 2015	33	2015

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