Članki z zahtevami za javni dostop - Sam VaziriVeč o tem
Ni na voljo nikjer: 3
Simulation of DC and RF performance of the graphene base transistor
S Venica, F Driussi, P Palestri, D Esseni, S Vaziri, L Selmi
IEEE Transactions on Electron Devices 61 (7), 2570-2576, 2014
Zahteve: Government of Italy
Emerging Graphene Device Technologies
M Östling, AD Smith, S Vaziri, SS Delekta, J Li, MC Lemme
ECS Transactions 75 (13), 17, 2016
Zahteve: Swedish Research Council, European Commission
Graphene base hot electron transistors with high on/off current ratios
S Vaziri, G Lupina, AD Smith, J Dabrowski, G Lippert, W Mehr, M Östling, ...
71st Device Research Conference, 39-40, 2013
Zahteve: German Research Foundation
Na voljo nekje: 47
Electromechanical piezoresistive sensing in suspended graphene membranes
AD Smith, F Niklaus, A Paussa, S Vaziri, AC Fischer, M Sterner, ...
Nano letters 13 (7), 3237-3242, 2013
Zahteve: German Research Foundation
Resistive graphene humidity sensors with rapid and direct electrical readout
AD Smith, K Elgammal, F Niklaus, A Delin, AC Fischer, S Vaziri, ...
Nanoscale 7 (45), 19099-19109, 2015
Zahteve: German Research Foundation, Swedish Research Council, European Commission
Residual metallic contamination of transferred chemical vapor deposited graphene
G Lupina, J Kitzmann, I Costina, M Lukosius, C Wenger, A Wolff, S Vaziri, ...
ACS nano 9 (5), 4776-4785, 2015
Zahteve: German Research Foundation, European Commission
Inkjet Printing of MoS2
J Li, MM Naiini, S Vaziri, MC Lemme, M Östling
Advanced Functional Materials 24 (41), 6524-6531, 2014
Zahteve: German Research Foundation, Swedish Research Council, European Commission
A graphene-based hot electron transistor
S Vaziri, G Lupina, C Henkel, AD Smith, M Östling, J Dabrowski, G Lippert, ...
Nano Letters, 2013
Zahteve: German Research Foundation
High-performance flexible nanoscale transistors based on transition metal dichalcogenides
A Daus, S Vaziri, V Chen, Ç Köroğlu, RW Grady, CS Bailey, HR Lee, ...
Nature Electronics 4 (7), 495-501, 2021
Zahteve: US National Science Foundation, Swiss National Science Foundation
High-specific-power flexible transition metal dichalcogenide solar cells
KCS Koosha Nassiri Nazif, Alwin Daus, Jiho Hong, Nayeun Lee, Sam Vaziri ...
Nature Communications 12, 7034, 2021
Zahteve: US National Science Foundation, US Department of Energy, Swiss National …
Piezoresistive properties of suspended graphene membranes under uniaxial and biaxial strain in nanoelectromechanical pressure sensors
AD Smith, F Niklaus, A Paussa, S Schröder, AC Fischer, M Sterner, ...
ACS nano 10 (11), 9879-9886, 2016
Zahteve: German Research Foundation, Swedish Research Council, European Commission …
Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials
S Vaziri, E Yalon, M Muñoz Rojo, SV Suryavanshi, H Zhang, ...
Science advances 5 (8), eaax1325, 2019
Zahteve: US National Science Foundation, US Department of Defense, Knut and Alice …
Uncovering the Effects of Metal Contacts on Monolayer MoS2
K Schauble, D Zakhidov, E Yalon, S Deshmukh, RW Grady, KA Cooley, ...
ACS nano 14 (11), 14798-14808, 2020
Zahteve: US National Science Foundation, US Department of Energy, US Department of …
Chemical vapor deposited graphene: From synthesis to applications
S Kataria, S Wagner, J Ruhkopf, A Gahoi, H Pandey, R Bornemann, ...
physica status solidi (a) 211 (11), 2439-2449, 2014
Zahteve: German Research Foundation, European Commission
Pressure sensors based on suspended graphene membranes
AD Smith, S Vaziri, F Niklaus, AC Fischer, M Sterner, A Delin, M Östling, ...
Solid-State Electronics 88, 89-94, 2013
Zahteve: German Research Foundation
A Comprehensive Graphene FET Model for Circuit Design
S Rodriguez, S Vaziri, A Smith, S Frégonèse, M Ostling, MC Lemme, ...
IEEE, 2014
Zahteve: German Research Foundation
Strain-Enhanced Mobility of Monolayer MoS2
IM Datye, A Daus, RW Grady, K Brenner, S Vaziri, E Pop
Nano Letters 22 (20), 8052-8059, 2022
Zahteve: US National Science Foundation, Swiss National Science Foundation, US …
Bilayer insulator tunnel barriers for graphene-based vertical hot-electron transistors
S Vaziri, M Belete, ED Litta, AD Smith, G Lupina, MC Lemme, M Östling
Nanoscale 7 (30), 13096-13104, 2015
Zahteve: German Research Foundation, Swedish Research Council, European Commission
Bias-temperature instability in single-layer graphene field-effect transistors
YY Illarionov, AD Smith, S Vaziri, M Ostling, T Mueller, MC Lemme, ...
Applied Physics Letters 105 (14), 2014
Zahteve: German Research Foundation, European Commission
Going ballistic: Graphene hot electron transistors
S Vaziri, AD Smith, M Östling, G Lupina, J Dabrowski, G Lippert, W Mehr, ...
Solid State Communications 224, 64-75, 2015
Zahteve: German Research Foundation, European Commission
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