Članki z zahtevami za javni dostop - Francesco DriussiVeč o tem
Ni na voljo nikjer: 7
Simulation of DC and RF performance of the graphene base transistor
S Venica, F Driussi, P Palestri, D Esseni, S Vaziri, L Selmi
IEEE Transactions on Electron Devices 61 (7), 2570-2576, 2014
Zahteve: Government of Italy
Total ionizing dose effects in Si-based tunnel FETs
L Ding, E Gnani, S Gerardin, M Bagatin, F Driussi, P Palestri, L Selmi, ...
IEEE Transactions on Nuclear Science 61 (6), 2874-2880, 2014
Zahteve: Government of Italy
Simulation Study of the Trapping Properties of -Based Charge-Trap Memory Cells
F Driussi, S Spiga, A Lamperti, G Congedo, A Gambi
IEEE Transactions on Electron Devices 61 (6), 2056-2063, 2014
Zahteve: Government of Italy
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method
S Venica, F Driussi, A Gahoi, S Kataria, P Palestri, MC Lenirne, L Scimi
2018 IEEE International Conference on Microelectronic Test Structures (ICMTS …, 2018
Zahteve: German Research Foundation, European Commission
Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs
L Ding, E Gnani, S Gerardin, M Bagatin, F Driussi, L Selmi, C Le Royer, ...
Solid-State Electronics 115, 146-151, 2016
Zahteve: Government of Italy
Effects of electrical stress and ionizing radiation on Si-based TFETs
L Ding, S Gerardin, A Paccagnella, E Gnani, M Bagatin, F Driussi, L Selmi, ...
EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and …, 2015
Zahteve: Government of Italy
Optimizing the Number of Steps and the Noise in Staircase APDs with Ternary III-V Semiconductor Alloys
A Pilotto, C Nichetti, P Palestri, L Selmi, M Antonelli, F Arfelli, G Biasiol, ...
2019 Joint International EUROSOI Workshop and International Conference on …, 2019
Zahteve: Government of Italy
Na voljo nekje: 29
Going ballistic: Graphene hot electron transistors
S Vaziri, AD Smith, M Östling, G Lupina, J Dabrowski, G Lippert, W Mehr, ...
Solid State Communications 224, 64-75, 2015
Zahteve: German Research Foundation, European Commission
Dependable contact related parameter extraction in graphene–metal junctions
A Gahoi, S Kataria, F Driussi, S Venica, H Pandey, D Esseni, L Selmi, ...
Advanced Electronic Materials 6 (10), 2000386, 2020
Zahteve: European Commission, Federal Ministry of Education and Research, Germany …
An improved nonlocal history-dependent model for gain and noise in avalanche photodiodes based on energy balance equation
C Nichetti, A Pilotto, P Palestri, L Selmi, M Antonelli, F Arfelli, G Biasiol, ...
IEEE Transactions on Electron Devices 65 (5), 1823-1829, 2018
Zahteve: Government of Italy
Ohmic behavior in metal contacts to n/p-type transition-metal dichalcogenides: Schottky versus tunneling barrier trade-off
D Lizzit, P Khakbaz, F Driussi, M Pala, D Esseni
ACS Applied Nano Materials 6 (7), 5737-5746, 2023
Zahteve: Agence Nationale de la Recherche, Government of Italy
Investigation of Hot Carrier Stress and Constant Voltage Stress in High-Si-Based TFETs
L Ding, E Gnani, S Gerardin, M Bagatin, F Driussi, P Palestri, L Selmi, ...
IEEE Transactions on Device and Materials Reliability 15 (2), 236-241, 2015
Zahteve: Government of Italy
Improved understanding of metal–graphene contacts
F Driussi, S Venica, A Gahoi, A Gambi, P Giannozzi, S Kataria, ...
Microelectronic Engineering 216, 111035, 2019
Zahteve: German Research Foundation, European Commission
Dependability assessment of transfer length method to extract the metal–graphene contact resistance
F Driussi, S Venica, A Gahoi, S Kataria, MC Lemme, P Palestri
IEEE Transactions on Semiconductor Manufacturing 33 (2), 210-215, 2020
Zahteve: Federal Ministry of Education and Research, Germany, Government of Italy
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation
T Steinhartova, C Nichetti, M Antonelli, G Cautero, RH Menk, A Pilotto, ...
Journal of Instrumentation 12 (11), C11017, 2017
Zahteve: Government of Italy
Ab-initio transport simulations unveil the Schottky versus tunneling barrier trade-off in metal-TMD contacts
D Lizzit, P Khakbaz, F Driussi, M Pala, D Esseni
2022 International Electron Devices Meeting (IEDM), 28.2. 1-28.2. 4, 2022
Zahteve: Agence Nationale de la Recherche, Government of Italy
Engineering of metal-MoS2 contacts to overcome Fermi level pinning
P Khakbaz, F Driussi, P Giannozzi, A Gambi, D Lizzit, D Esseni
Solid-State Electronics 194, 108378, 2022
Zahteve: Government of Italy
Simulation study of Fermi level depinning in metal-MoS2 contacts
P Khakbaz, F Driussi, P Giannozzi, A Gambi, D Esseni
Solid-State Electronics 184, 108039, 2021
Zahteve: Government of Italy
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions
C Nichetti, T Steinhartova, M Antonelli, G Cautero, RH Menk, A Pilotto, ...
Journal of Instrumentation 14 (01), C01003, 2019
Zahteve: Government of Italy
Detailed characterization and critical discussion of series resistance in graphene-metal contacts
S Venica, F Driussi, A Gahoi, V Passi, P Palestri, MC Lemme, L Selmi
2017 International Conference of Microelectronic Test Structures (ICMTS), 1-5, 2017
Zahteve: European Commission
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