‪Yury Illarionov (Юрий Юрьевич Илларионов)‬

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Tibor GrasserProfessor at TU Wien, Head of Institute for Microelectronics, Fellow IEEEPreverjeni e-poštni naslov na iue.tuwien.ac.at
Theresia KnoblochResearcher, TU WienPreverjeni e-poštni naslov na iue.tuwien.ac.at
Michael WaltlFull Professor at TU Wien, Vienna, AustriaPreverjeni e-poštni naslov na iue.tuwien.ac.at
Thomas MuellerVienna University of TechnologyPreverjeni e-poštni naslov na tuwien.ac.at
Max C. LemmeProfessor, RWTH Aachen University, Germany, Director, AMO GmbHPreverjeni e-poštni naslov na eld.rwth-aachen.de
Mario LanzaIEEE Fellow | Associate Professor at National University of SingaporePreverjeni e-poštni naslov na kaust.edu.sa
Gerhard RzepaGlobal TCAD SolutionsPreverjeni e-poštni naslov na globaltcad.com
Stefan Wachterpost-doctoral researcher, TU WienPreverjeni e-poštni naslov na tuwien.ac.at
Dmitry PolyushkinPhotonics Institute, TU WienPreverjeni e-poštni naslov na tuwien.ac.at
Deji AkinwandeThe University of Texas at Austin, IEEE, MRS, APS, AAS FellowPreverjeni e-poštni naslov na ece.utexas.edu
Marco M. Furchi'PostDoc, TU WienPreverjeni e-poštni naslov na tuwien.ac.at
Eric PopPease-Ye Professor of Electrical Engineering, MSE, AP at Stanford & SLACPreverjeni e-poštni naslov na stanford.edu
Sergey SuturinФТИ им. А.Ф.ИоффеPreverjeni e-poštni naslov na mail.ioffe.ru
Vladimir FedorovSt. Petersburg Academic University of Russian Academy of SciencesPreverjeni e-poštni naslov na spbstu.ru
Joerg AppenzellerProfessor of Electrical and Computer Engineering, Purdue UniversityPreverjeni e-poštni naslov na purdue.edu
Stanislav Tyaginovprincipal researcher, imecPreverjeni e-poštni naslov na imec.be
Mischa ThesbergGlobal TCAD SolutionsPreverjeni e-poštni naslov na globaltcad.com
Bernhard StampferInstitute for Microelectronics, TU WienPreverjeni e-poštni naslov na iue.tuwien.ac.at
Anderson David SmithAssociate Professor, Chalmers University of TechnologyPreverjeni e-poštni naslov na kth.se
Sam VaziriStanford UniversityPreverjeni e-poštni naslov na stanford.edu

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Yury Illarionov (Юрий Юрьевич Илларионов)

Southern University of Science and Technology (SUSTech)

Preverjeni e-poštni naslov na sustech.edu.cn - Domača stran

2D materials


Naslov Razvrsti po navedbah Razvrsti po letniku Razvrsti po naslovu	Navedeno Navedeno	Leto
Transistors based on two-dimensional materials for future integrated circuits S Das, A Sebastian, E Pop, CJ McClellan, AD Franklin, T Grasser, ... Nature Electronics 4, 786-799, 2021	675	2021
Insulators for 2D nanoelectronics: the gap to bridge YY Illarionov, T Knobloch, M Jech, M Lanza, D Akinwande, MI Vexler, ... Nature Communications 11, 3385, 2020	438	2020
The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, K Watanabe, ... Nature Electronics 4 (2), 98-108, 2021	299	2021
Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors YY Illarionov, AG Banshchikov, DK Polyushkin, S Wachter, T Knobloch, ... Nature Electronics 2 (6), 230-235, 2019	257	2019
The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors YY Illarionov, G Rzepa, M Waltl, T Knobloch, A Grill, MM Furchi, T Mueller, ... 2D materials 3, 035004, 2016	248	2016
Long-term stability and reliability of black phosphorus field-effect transistors YY Illarionov, M Waltl, G Rzepa, JS Kim, S Kim, A Dodabalapur, ... ACS nano 10 (10), 9543-9549, 2016	198	2016
Improved Hysteresis and Reliability of MoS2 Transistors with High-Quality CVD Growth and Al2O3 Encapsulation YY Illarionov, KKH Smithe, M Waltl, T Knobloch, E Pop, T Grasser IEEE Electron Device Letters, 2017	125	2017
Engineering field effect transistors with 2D semiconducting channels: Status and prospects X Jing, Y Illarionov, E Yalon, P Zhou, T Grasser, Y Shi, M Lanza Advanced Functional Materials 30 (18), 1901971, 2020	99	2020
Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning T Knobloch, B Uzlu, YY Illarionov, Z Wang, M Otto, L Filipovic, M Waltl, ... Nature Electronics 5 (6), 356-366, 2022	84	2022
Characterization of Single Defects in Ultrascaled MoS₂ Field-Effect Transistors B Stampfer, F Zhang, YY Illarionov, T Knobloch, P Wu, M Waltl, A Grill, ... ACS nano 12 (6), 5368-5375, 2018	79	2018
Energetic mapping of oxide traps in MoS2 field-effect transistors YY Illarionov, T Knobloch, M Waltl, G Rzepa, A Pospischil, DK Polyushkin, ... 2D Materials 4 (2), 025108, 2017	77	2017
A Physical Model for the Hysteresis in MoS₂ Transistors T Knobloch, G Rzepa, YY Illarionov, M Waltl, F Schanovsky, B Stampfer, ... IEEE Journal of the Electron Devices Society 6, 972-978, 2018	70	2018
Highly-stable black phosphorus field-effect transistors with low density of oxide traps YY Illarionov, M Waltl, G Rzepa, T Knobloch, JS Kim, D Akinwande, ... npj 2D Materials and Applications 1 (1), 23, 2017	67	2017
Dielectric Properties of Ultrathin CaF2 Ionic Crystals C Wen, AG Banshchikov, YY Illarionov, W Frammelsberger, T Knobloch, ... Advanced Materials, 2002525, 2020	66	2020
Bias-temperature Instability in Single-layer Graphene Field-effect Transistors Y Illarionov, M Waltl, A Smith, S Vaziri, M Ostling, T Mueller, M Lemme, ... Applied Physics Letters 105 (14), 143507, 2014	57	2014
Reliability of scalable MoS2 FETs with 2 nm crystalline CaF2 insulators YY Illarionov, AG Banshchikov, DK Polyushkin, S Wachter, T Knobloch, ... 2D Materials 6 (4), 045004, 2019	43	2019
Perspective of 2D integrated electronic circuits: Scientific pipe dream or disruptive technology? M Waltl, T Knobloch, K Tselios, L Filipovic, B Stampfer, Y Hernandez, ... Advanced Materials 34 (48), 2201082, 2022	40	2022
Hot-carrier degradation and bias-temperature instability in single-layer graphene field-effect transistors: Similarities and differences Y Illarionov, A Smith, S Vaziri, M Ostling, T Mueller, M Lemme, T Grasser IEEE Transactions on electron devices 62 (11), 3876-3881, 2015	33	2015
Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics—Part I: Experimental B Ullmann, M Jech, K Puschkarsky, GA Rott, M Waltl, Y Illarionov, ... IEEE Transactions on Electron Devices 66 (1), 232-240, 2018	32	2018
Electrical and optical characterization of Au/CaF2/p-Si(111) tunnel-injection diodes YY Illarionov, MI Vexler, SM Suturin, VV Fedorov, NS Sokolov Journal of applied Physics, 2014	31	2014

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