| Nonpolar and semipolar III-nitride light-emitting diodes: Achievements and challenges H Masui, S Nakamura, SP DenBaars, UK Mishra IEEE Transactions on Electron Devices 57 (1), 88-100, 2009 | 311 | 2009 |
| High power and high external efficiency m-plane InGaN light emitting diodes MC Schmidt, KC Kim, H Sato, N Fellows, H Masui, S Nakamura, ... Japanese Journal of Applied Physics 46 (2L), L126, 2007 | 307 | 2007 |
| Demonstration of a semipolar (101¯ 3¯) InGaN∕ GaN green light emitting diode R Sharma, PM Pattison, H Masui, RM Farrell, TJ Baker, BA Haskell, F Wu, ... Applied Physics Letters 87 (23), 2005 | 307 | 2005 |
| Optimization of laser bar orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers RM Farrell, MC Schmidt, KC Kim, H Masui, DF Feezell, JS Speck, ... US Patent 7,839,903, 2010 | 274 | 2010 |
| Optical properties of yellow light-emitting diodes grown on semipolar (112¯ 2) bulk GaN substrates H Sato, RB Chung, H Hirasawa, N Fellows, H Masui, F Wu, M Saito, ... Applied Physics Letters 92 (22), 2008 | 211 | 2008 |
| Growth and characterization of bulk InGaN films and quantum wells S Keller, BP Keller, D Kapolnek, AC Abare, H Masui, LA Coldren, ... Applied physics letters 68 (22), 3147-3149, 1996 | 209 | 1996 |
| A yellow-emitting Ce3+ phosphor, La1− xCexSr2AlO5, for white light-emitting diodes WB Im, YI Kim, NN Fellows, H Masui, GA Hirata, SP DenBaars, ... Applied Physics Letters 93 (9), 2008 | 207 | 2008 |
| High light extraction efficiency light emitting diode (LED) SP DenBaars, S Nakamura, H Masui, NN Fellows, A Murai US Patent 7,994,527, 2011 | 154 | 2011 |
| Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN BP Keller, S Keller, D Kapolnek, WN Jiang, YF Wu, H Masui, X Wu, ... Journal of electronic materials 24, 1707-1709, 1995 | 126 | 1995 |
| Polarized light emission from nonpolar InGaN light-emitting diodes grown on a bulk m-plane GaN substrate H Masui, A Chakraborty, BA Haskell, UK Mishra, JS Speck, S Nakamura, ... Japanese journal of applied physics 44 (10L), L1329, 2005 | 97 | 2005 |
| Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1− xN∕ GaN blue light emitting diodes fabricated on freestanding GaN substrates T Koyama, T Onuma, H Masui, A Chakraborty, BA Haskell, S Keller, ... Applied physics letters 89 (9), 2006 | 94 | 2006 |
| Optical polarization characteristics of m-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure H Masui, H Yamada, K Iso, S Nakamura, SP DenBaars Journal of Physics D: Applied Physics 41 (22), 225104, 2008 | 86 | 2008 |
| Nonpolar m-plane blue-light-emitting diode lamps with output power of 23.5 mW under pulsed operation A Chakraborty, BA Haskell, H Masui, S Keller, JS Speck, SP DenBaars, ... Japanese journal of applied physics 45 (2R), 739, 2006 | 85 | 2006 |
| Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes H Masui, J Sonoda, N Pfaff, I Koslow, S Nakamura, SP DenBaars Journal of Physics D: Applied Physics 41 (16), 165105, 2008 | 83 | 2008 |
| Compositional dependence of nonpolar m-plane InxGa1-xN/GaN light emitting diodes H Yamada, K Iso, M Saito, H Masui, K Fujito, SP DenBaars, S Nakamura Applied physics express 1 (4), 041101, 2008 | 80 | 2008 |
| High light extraction efficiency light emitting diode (led) using glass packaging SP DenBaars, S Nakamura, H Masui US Patent App. 12/275,136, 2009 | 71 | 2009 |
| Hexagonal pyramid shaped light-emitting diodes based on ZnO and GaN direct wafer bonding A Murai, DB Thompson, H Masui, N Fellows, UK Mishra, S Nakamura, ... Applied Physics Letters 89 (17), 2006 | 71 | 2006 |
| Light-polarization characteristics of electroluminescence from InGaN∕ GaN light-emitting diodes prepared on (112¯ 2)-plane GaN H Masui, TJ Baker, M Iza, H Zhong, S Nakamura, SP DenBaars Journal of applied physics 100 (11), 2006 | 61 | 2006 |
| Diode ideality factor in modern light-emitting diodes H Masui Semiconductor science and technology 26 (7), 075011, 2011 | 51 | 2011 |
| Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1 0 0) and semipolar (1 1 2) orientations H Masui, H Asamizu, T Melo, H Yamada, K Iso, SC Cruz, S Nakamura, ... Journal of Physics D: Applied Physics 42 (13), 135106, 2009 | 49 | 2009 |
