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Kawser Ahmed
Kawser Ahmed
Device Engineer, Intel Corporation
Подтвержден адрес электронной почты в домене intel.com
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Процитировано
Процитировано
Год
Growth of hexagonal boron nitride on (111) Si for deep UV photonics and thermal neutron detection
K Ahmed, R Dahal, A Weltz, JJQ Lu, Y Danon, I Bhat
Apllied Physics Letters 109 (11), 113501-113504, 2016
872016
Solid-state neutron detectors based on thickness scalable hexagonal boron nitride
K Ahmed, R Dahal, A Weltz, JJQ Lu, Y Danon, IB Bhat
Applied Physics Letters 110 (2), 023503, 2017
582017
Effects of sapphire nitridation and growth temperature on the epitaxial growth of hexagonal boron nitride on sapphire
K Ahmed, R Dahal, A Weltz, JJQ Lu, Y Danon, IB Bhat
Materials Research Express 4 (1), 015007, 2017
372017
Anisotropic charge carriers transport in free standing hexagonal boron nitride thin films
R Dahal, K Ahmed, JW Wu, A Weltz, JJQ Lu, Y Danon, I Bhat
Applied Physics Express 9 (6), 065801, 2016
282016
Metalorganic chemical vapor deposition of hexagonal boron nitride on (001) sapphire substrates for thermal neutron detector applications
K Ahmed, R Dahal, A Weltz, JJQ Lu, Y Danon, IB Bhat
Vacuum 137, 81-84, 2016
152016
Metalorganic chemical vapor deposition of hexagonal boron nitride on (001) sapphire substrates for thermal neutron detector applications
K Ahmed, R Dahal, A Weltz, JJQ Lu, Y Danon, IB Bhat
arXiv:1609.02647 [cond-mat.mtrl-sci], 2016
152016
An improved analytical model of current in tunnel field effect transistor
MMM Elahi, K Ahmed, MS Islam
Electrical & Computer Engineering (ICECE), 2012 7th International Conference …, 2012
132012
A compact analytical model of band-to-band tunneling in a nanoscale pin diode
K Ahmed, MMM Elahi, MS Islam
Informatics, Electronics & Vision (ICIEV), 2012 International Conference on …, 2012
112012
Off current modeling of a tunnel field effect transistor
MS Islam, K Ahmed, MMM Elahi
Electrical & Computer Engineering (ICECE), 2012 7th International Conference …, 2012
12012
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Статьи 1–9