| Room-temperature polariton lasing in semiconductor microcavities S Christopoulos, GBH Von Högersthal, AJD Grundy, PG Lagoudakis, ... Physical review letters 98 (12), 126405, 2007 | 1217 | 2007 |
| Temperature quenching of photoluminescence intensities in undoped and doped GaN M Leroux, N Grandjean, B Beaumont, G Nataf, F Semond, J Massies, ... Journal of Applied Physics 86 (7), 3721-3728, 1999 | 644 | 1999 |
| Quantum confined Stark effect due to built-in internal polarization fields in (Al, Ga) N/GaN quantum wells M Leroux, N Grandjean, M Laügt, J Massies, B Gil, P Lefebvre, ... Physical Review B 58 (20), R13371, 1998 | 469 | 1998 |
| Current status of AlInN layers lattice-matched to GaN for photonics and electronics R Butté, JF Carlin, E Feltin, M Gonschorek, S Nicolay, G Christmann, ... Journal of Physics D: Applied Physics 40 (20), 6328, 2007 | 413 | 2007 |
| High electron mobility lattice-matched AlInN∕ GaN field-effect transistor heterostructures M Gonschorek, JF Carlin, E Feltin, MA Py, N Grandjean Applied physics letters 89 (6), 2006 | 390 | 2006 |
| Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells N Grandjean, B Damilano, S Dalmasso, M Leroux, M Laügt, J Massies Journal of applied physics 86 (7), 3714-3720, 1999 | 390 | 1999 |
| Room temperature polariton lasing in a GaN∕ AlGaN multiple quantum well microcavity G Christmann, R Butté, E Feltin, JF Carlin, N Grandjean Applied Physics Letters 93 (5), 2008 | 377 | 2008 |
| From visible to white light emission by GaN quantum dots on Si (111) substrate B Damilano, N Grandjean, F Semond, J Massies, M Leroux Applied physics letters 75 (7), 962-964, 1999 | 351 | 1999 |
| High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy P Lefebvre, A Morel, M Gallart, T Taliercio, J Allègre, B Gil, H Mathieu, ... Applied Physics Letters 78 (9), 1252-1254, 2001 | 314 | 2001 |
| Spontaneous polarization buildup in a room-temperature polariton laser JJ Baumberg, AV Kavokin, S Christopoulos, AJD Grundy, R Butté, ... Physical Review Letters 101 (13), 136409, 2008 | 294 | 2008 |
| Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers N Grandjean, J Massies, M Leroux Applied physics letters 69 (14), 2071-2073, 1996 | 284 | 1996 |
| Barrier-width dependence of group-III nitrides quantum-well transition energies M Leroux, N Grandjean, J Massies, B Gil, P Lefebvre, P Bigenwald Physical Review B 60 (3), 1496, 1999 | 268 | 1999 |
| Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices? F Medjdoub, JF Carlin, M Gonschorek, E Feltin, MA Py, D Ducatteau, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 260 | 2006 |
| Two-dimensional electron gas density in Al1− xInxN/AlN/GaN heterostructures (0.03≤ x≤ 0.23) M Gonschorek, JF Carlin, E Feltin, MA Py, N Grandjean, V Darakchieva, ... Journal of Applied Physics 103 (9), 2008 | 217 | 2008 |
| Molecular Beam Epitaxy of Group‐III Nitrides on Silicon Substrates: Growth, Properties and Device Applications F Semond, Y Cordier, N Grandjean, F Natali, B Damilano, S Vézian, ... physica status solidi (a) 188 (2), 501-510, 2001 | 208 | 2001 |
| Progresses in III‐nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials JF Carlin, C Zellweger, J Dorsaz, S Nicolay, G Christmann, E Feltin, ... physica status solidi (b) 242 (11), 2326-2344, 2005 | 195 | 2005 |
| Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl) N quantum wells P Lefebvre, J Allègre, B Gil, H Mathieu, N Grandjean, M Leroux, J Massies, ... Physical Review B 59 (23), 15363, 1999 | 193 | 1999 |
| Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate G Cosendey, A Castiglia, G Rossbach, JF Carlin, N Grandjean Applied Physics Letters 101 (15), 2012 | 187 | 2012 |
| Testing the temperature limits of GaN-based HEMT devices D Maier, M Alomari, N Grandjean, JF Carlin, MA Diforte-Poisson, C Dua, ... IEEE Transactions on device and materials reliability 10 (4), 427-436, 2010 | 185 | 2010 |
| Epitaxial growth of highly strained InxGa1− xAs on GaAs (001): the role of surface diffusion length N Grandjean, J Massies Journal of crystal growth 134 (1-2), 51-62, 1993 | 184 | 1993 |
