| Worst-case bias during total dose irradiation of SOI transistors V Ferlet-Cavrois, T Colladant, P Paillet, JL Leray, O Musseau, ... IEEE Transactions on Nuclear Science 47 (6), 2183-2188, 2000 | 168 | 2000 |
| Electrical properties of Ta2O5 films obtained by plasma enhanced chemical vapor deposition using a TaF5 source RAB Devine, L Vallier, JL Autran, P Paillet, JL Leray Applied physics letters 68 (13), 1775-1777, 1996 | 105 | 1996 |
| Impact of ion energy on single-event upset PE Dodd, O Musseau, MR Shaneyfelt, FW Sexton, C D'hose, GL Hash, ... IEEE Transactions on Nuclear Science 45 (6), 2483-2491, 1998 | 104 | 1998 |
| Oxygen gettering and oxide degradation during annealing of Si/SiO2/Si structures RAB Devine, WL Warren, JB Xu, IH Wilson, P Paillet, JL Leray Journal of applied physics 77 (1), 175-186, 1995 | 102 | 1995 |
| Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistor C Brisset, V Ferlet-Cavrois, O Flament, O Musseau, JL Leray, JL Pelloie, ... IEEE Transactions on Nuclear Science 43 (6), 2651-2658, 1996 | 99 | 1996 |
| Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides JR Schwank, MR Shaneyfelt, PE Dodd, V Ferlet-Cavrois, RA Loemker, ... IEEE transactions on nuclear science 47 (6), 2175-2182, 2000 | 93 | 2000 |
| CMOS/SOI hardening at 100 Mrad (SiO/sub 2/) JL Leray, E Dupont-Nivet, JF Péré, YM Coïc, M Raffaelli, ... IEEE Transactions on Nuclear science 37 (6), 2013-2019, 1990 | 90 | 1990 |
| From substrate to VLSI: investigation of hardened SIMOX without epitaxy, for dose, dose rate and SEU phenomena JL Leray, E Dupont-Nivet, O Musseau, YM Coic, A Umbert, P Lalande, ... IEEE Transactions on Nuclear Science 35 (6), 1355-1360, 1988 | 81 | 1988 |
| Effects of atmospheric neutrons on devices, at sea level and in avionics embedded systems JL Leray Microelectronics Reliability 47 (9-11), 1827-1835, 2007 | 79 | 2007 |
| Total dose induced latch in short channel NMOS/SOI transistors V Ferlet-Cavrois, S Quoizola, O Musseau, O Flament, JL Leray, JL Pelloie, ... IEEE Transactions on Nuclear Science 45 (6), 2458-2466, 1998 | 73 | 1998 |
| A study of radiation vulnerability of ferroelectric material and devices YM Coic, O Musseau, JL Leray IEEE transactions on nuclear science 41 (3), 495-502, 1994 | 66 | 1994 |
| New constraints for plasma diagnostics development due to the harsh environment of MJ class lasers JL Bourgade, V Allouche, J Baggio, C Bayer, F Bonneau, C Chollet, ... Review of Scientific Instruments 75 (10), 4204-4212, 2004 | 65 | 2004 |
| Effects of isochronal annealing and irradiation temperature on radiation-induced trapped charge DM Fleetwood, PS Winokur, MR Shaneyfelt, LC Riewe, O Flament, ... IEEE Transactions on Nuclear Science 45 (6), 2366-2374, 1998 | 65 | 1998 |
| Diagnostic components in harsh radiation environments: Possible overlap in R&D requirements of inertial confinement and magnetic fusion systems JL Bourgade, AE Costley, R Reichle, ER Hodgson, W Hsing, V Glebov, ... Review of Scientific Instruments 79 (10), 2008 | 59 | 2008 |
| Ultraviolet radiation induced defect creation in buried SiO2 layers RAB Devine, JL Leray, J Margail Applied physics letters 59 (18), 2275-2277, 1991 | 56 | 1991 |
| Total dose effects: Modeling for present and future JL Leray IEEE NSREC Short Course 23 (3), 225-231, 1999 | 55 | 1999 |
| Comparative study of radiation‐induced electrical and spin active defects in buried SiO2 layers D Herve, JL Leray, RAB Devine Journal of applied physics 72 (8), 3634-3640, 1992 | 54 | 1992 |
| Study of a CMOS-JFET-bipolar radiation hard analog-digital technology suitable for high energy physics electronics M Dentan, E Delagnes, N Fourches, M Rouger, MC Habrard, L Blanquart, ... IEEE transactions on nuclear science 40 (6), 1555-1560, 1993 | 51 | 1993 |
| Radiation-induced effects in a new class of optical waveguides: the air-guiding photonic crystal fibers S Girard, J Baggio, JL Leray IEEE transactions on nuclear science 52 (6), 2683-2688, 2005 | 48 | 2005 |
| DMILL, a mixed analog-digital radiation-hard BICMOS technology for high energy physics electronics M Dentan, P Abbon, E Delagnes, N Fourches, D Lachartre, F Lugiez, ... IEEE Transactions on Nuclear Science 43 (3), 1763-1767, 1996 | 48 | 1996 |
Sylvain GIRARDProfessor, Université de Saint-Etienne, Laboratoire Hubert Curien, IUF, FranceПодтвержден адрес электронной почты в домене univ-st-etienne.fr
