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Enrique Miranda
Enrique Miranda
Universitat Autonoma de Barcelona
Подтвержден адрес электронной почты в домене uab.cat
Название
Процитировано
Процитировано
Год
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
6292019
Coexistence of grain‐boundaries‐assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride
C Pan, Y Ji, N Xiao, F Hui, K Tang, Y Guo, X Xie, FM Puglisi, L Larcher, ...
Advanced functional materials 27 (10), 1604811, 2017
3262017
Impact of Temperature on the Resistive Switching Behavior of Embedded -Based RRAM Devices
C Walczyk, D Walczyk, T Schroeder, T Bertaud, M Sowinska, M Lukosius, ...
IEEE transactions on electron devices 58 (9), 3124-3131, 2011
2892011
Model for the Resistive Switching Effect in MIM Structures Based on the Transmission Properties of Narrow Constrictions
EA Miranda, C Walczyk, C Wenger, T Schroeder
IEEE Electron Device Letters 31 (6), 609-611, 2010
2172010
Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries
M Lanza, G Bersuker, M Porti, E Miranda, M Nafría, X Aymerich
Applied Physics Letters 101 (19), 2012
2072012
Silicon Oxide (SiOx): A Promising Material for Resistance Switching?
A Mehonic, AL Shluger, D Gao, I Valov, E Miranda, D Ielmini, A Bricalli, ...
Advanced materials 30 (43), 1801187, 2018
2062018
Quantum-size effects in hafnium-oxide resistive switching
S Long, X Lian, C Cagli, X Cartoixa, R Rurali, E Miranda, D Jiménez, ...
Applied Physics Letters 102 (18), 2013
1852013
Standards for the characterization of endurance in resistive switching devices
M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ...
ACS nano 15 (11), 17214-17231, 2021
1782021
Analytic model for the surface potential and drain current in negative capacitance field-effect transistors
D Jimenez, E Miranda, A Godoy
IEEE Transactions on Electron Devices 57 (10), 2405-2409, 2010
1692010
Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM
S Long, L Perniola, C Cagli, J Buckley, X Lian, E Miranda, F Pan, M Liu, ...
Scientific reports 3 (1), 2929, 2013
1672013
Electron transport through broken down ultra-thin SiO2 layers in MOS devices
E Miranda, J Sune
Microelectronics Reliability 44 (1), 1-23, 2004
1542004
A model for the set statistics of RRAM inspired in the percolation model of oxide breakdown
S Long, X Lian, C Cagli, L Perniola, E Miranda, M Liu, J Suñé
IEEE electron device letters 34 (8), 999-1001, 2013
1392013
Cycle-to-Cycle Intrinsic RESET Statistics in -Based Unipolar RRAM Devices
S Long, X Lian, T Ye, C Cagli, L Perniola, E Miranda, M Liu, J Sune
IEEE electron device letters 34 (5), 623-625, 2013
1292013
Analytic modeling of leakage current through multiple breakdown paths in SiO/sub 2/films
E Miranda, J Suñé
2001 IEEE International Reliability Physics Symposium Proceedings. 39th …, 2001
1272001
Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics
E Miranda, J Suñé, R Rodríguez, M Nafria, X Aymerich, L Fonseca, ...
IEEE Transactions on Electron Devices 47 (1), 82-89, 2000
1272000
Are soft breakdown and hard breakdown of ultrathin gate oxides actually different failure mechanisms?
J Suñé, G Mura, E Miranda
IEEE Electron Device Letters 21 (4), 167-169, 2000
972000
Post soft breakdown conduction in SiO/sub 2/gate oxides
J Sune, E Miranda
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000
962000
A function-fit model for the soft breakdown failure mode
E Miranda, J Sune, R Rodriguez, M Nafria, X Aymerich
IEEE Electron Device Letters 20 (6), 265-267, 1999
941999
Point contact conduction at the oxide breakdown of MOS devices
J Sune, E Miranda, M Nafria, X Aymerich
International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998
861998
Variability in resistive memories
JB Roldán, E Miranda, D Maldonado, AN Mikhaylov, NV Agudov, ...
Advanced Intelligent Systems 5 (6), 2200338, 2023
852023
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