| Transition‐Metal‐Carbide (Mo2C) Multiperiod Gratings for Realization of High‐Sensitivity and Broad‐Spectrum Photodetection J Jeon, H Choi, S Choi, JH Park, BH Lee, E Hwang, S Lee Advanced Functional Materials 29 (48), 1905384, 2019 | 72 | 2019 |
| MXenes for future nanophotonic device applications J Jeon, Y Yang, H Choi, JH Park, BH Lee, S Lee Nanophotonics 9 (7), 1831-1853, 2020 | 49 | 2020 |
| Homogeneous platinum diselenide metal/semiconductor coplanar structure fabricated by selective thickness control Y Yang, SK Jang, H Choi, J Xu, S Lee Nanoscale 11 (44), 21068-21073, 2019 | 30 | 2019 |
| A steep switching WSe2 impact ionization field-effect transistor H Choi, J Li, T Kang, C Kang, H Son, J Jeon, E Hwang, S Lee Nature Communications 13 (1), 6076, 2022 | 23 | 2022 |
| Complementary driving between 2D heterostructures and surface functionalization for surpassing binary logic devices H Son, H Choi, J Jeon, YJ Kim, S Choi, JH Cho, S Lee ACS Applied Materials & Interfaces 13 (7), 8692-8699, 2021 | 14 | 2021 |
| Emergence of multiple negative differential transconductance from a WSe2 double lateral homojunction platform H Son, J Lee, TH Kim, S Choi, H Choi, YH Kim, S Lee Applied Surface Science 581, 152396, 2022 | 10 | 2022 |
| Electronic and electrocatalytic applications based on solution‐processed two‐dimensional platinum diselenide with thickness‐dependent electronic properties YS Cho, D Rhee, J Lee, SY Jung, J Eom, V Mazanek, B Wu, T Kang, ... EcoMat 5 (8), e12358, 2023 | 8 | 2023 |
| A steep-switching impact ionization-based threshold switching field-effect transistor C Kang, H Choi, H Son, T Kang, SM Lee, S Lee Nanoscale 15 (12), 5771-5777, 2023 | 8 | 2023 |
| Anisotropy of impact ionization in WSe2 field effect transistors T Kang, H Choi, J Li, C Kang, E Hwang, S Lee Nano Convergence 10 (1), 13, 2023 | 7 | 2023 |
| Broad‐Spectrum Photodetection with High Sensitivity Via Avalanche Multiplication in WSe2 H Choi, S Choi, T Kang, H Son, C Kang, E Hwang, S Lee Advanced Optical Materials 10 (22), 2201196, 2022 | 7 | 2022 |
| Fabrication of van der Waals heterostructures through direct growth of rhenium disulfide on van der Waals surfaces J Jeon, H Choi, S Baek, S Choi, JH Cho, S Lee Applied Surface Science 544, 148865, 2021 | 3 | 2021 |
| High‐κ Dielectric (HfO2)/2D Semiconductor (HfSe2) Gate Stack for Low‐Power Steep‐Switching Computing Devices T Kang, J Park, H Jung, H Choi, SM Lee, N Lee, RG Lee, G Kim, SH Kim, ... Advanced Materials, 2312747, 2024 | 2 | 2024 |
| Spiking Neural Network Integrated with Impact Ionization Field‐Effect Transistor Neuron and a Ferroelectric Field‐Effect Transistor Synapse H Choi, S Baek, H Jung, T Kang, S Lee, J Jeon, BC Jang, S Lee Advanced Materials, 2406970, 2024 | | 2024 |
| Super-steep switching device and inverter device using the same HJ Choi, TH Kang, CW Kang, HJ Son, JH Park, SJ Lee, SP Baek US Patent App. 18/598,689, 2024 | | 2024 |
| Super-steep switching device and inverter device using the same HJ Choi, TH Kang, CW Kang, HJ Son, JH Park, SJ Lee, SP Baek US Patent App. 18/014,078, 2024 | | 2024 |
| Carrier type and density dependence of impact ionization characteristics in WSe 2 H Choi, J Li, T Kang, S Lee, E Hwang, S Lee Nanoscale 16 (41), 19469-19476, 2024 | | 2024 |
| Negative transconductance device and multi-valued inverter logic device using the same SJ Lee, JH Cho, JH Jeon, HJ Son, HJ Choi, MJ Kim US Patent 11,605,650, 2023 | | 2023 |
| 3 차원 피터슨-토러스 상호연결망에서 해밀톤 사이클 서정현， 최해주， 장문석 한국정보과학회 학술발표논문집 35 (2B), 506-509, 2008 | | 2008 |
