| Single-material semiconductor hyperbolic metamaterials D Wei, C Harris, CC Bomberger, J Zhang, J Zide, S Law Optics Express 24 (8), 8735-8745, 2016 | 47 | 2016 |
| Enhanced room temperature electronic and thermoelectric properties of the dilute bismuthide InGaBiAs P Dongmo, Y Zhong, P Attia, C Bomberger, R Cheaito, JF Ihlefeld, ... Journal of Applied Physics 112 (9), 2012 | 47 | 2012 |
| Charge carrier relaxation processes in TbAs nanoinclusions in GaAs measured by optical-pump THz-probe transient absorption spectroscopy LR Vanderhoef, AK Azad, CC Bomberger, DR Chowdhury, DB Chase, ... Physical Review B 89 (4), 045418, 2014 | 38 | 2014 |
| Overview of lanthanide pnictide films and nanoparticles epitaxially incorporated into III-V semiconductors CC Bomberger, MR Lewis, LR Vanderhoef, MF Doty, JMO Zide Journal of Vacuum Science & Technology B 35 (3), 2017 | 30 | 2017 |
| Experimental studies of thermoelectric power generation in dynamic temperature environments PM Attia, MR Lewis, CC Bomberger, AK Prasad, JMO Zide Energy, 2013 | 27 | 2013 |
| Cross-plane thermoelectric transport in p-type La0. 67Sr0. 33MnO3/LaMnO3 oxide metal/semiconductor superlattices P Jha, TD Sands, P Jackson, C Bomberger, T Favaloro, S Hodson, J Zide, ... Journal of Applied Physics 113 (19), 2013 | 20 | 2013 |
| N-type doping strategies for InGaAs H Aldridge Jr, AG Lind, CC Bomberger, Y Puzyrev, JMO Zide, ... Materials Science in Semiconductor Processing 62, 171-179, 2017 | 19 | 2017 |
| Modeling passive power generation in a temporally-varying temperature environment via thermoelectrics CC Bomberger, PM Attia, AK Prasad, JMO Zide Applied thermal engineering 56 (1-2), 152-158, 2013 | 17 | 2013 |
| Comparison of thermal annealing effects on electrical activation of MBE grown and ion implant Si-doped In0. 53Ga0. 47As AG Lind, HL Aldridge, CC Bomberger, C Hatem, JMO Zide, KS Jones Journal of Vacuum Science & Technology B 33 (2), 2015 | 16 | 2015 |
| Opportunities in 3-D stacked CMOS transistors M Radosavljević, CY Huang, W Rachmady, SH Seung, NK Thomas, ... 2021 IEEE International Electron Devices Meeting (IEDM), 34.1. 1-34.1. 4, 2021 | 14 | 2021 |
| Growth and characterization of TbAs films CC Bomberger, BE Tew, MR Lewis, JMO Zide Applied Physics Letters 109 (20), 2016 | 13 | 2016 |
| Gate-all-around integrated circuit structures having germanium nanowire channel structures C Bomberger, A Murthy, S Ghose, Z Geiger US Patent 11,532,734, 2022 | 12 | 2022 |
| Growth and characterization of ErAs: GaBixAs1− x CC Bomberger, J Nieto-Pescador, MR Lewis, BE Tew, Y Wang, ... Applied Physics Letters 109 (17), 2016 | 12 | 2016 |
| Determining the band alignment of TbAs: GaAs and TbAs: In0. 53Ga0. 47As CC Bomberger, LR Vanderhoef, A Rahman, D Shah, DB Chase, ... Applied Physics Letters 107 (10), 2015 | 10 | 2015 |
| Observation of Self‐Assembled Core–Shell Structures in Epitaxially Embedded TbErAs Nanoparticles P Dongmo, M Hartshorne, T Cristiani, ML Jablonski, C Bomberger, ... small 10 (23), 4920-4925, 2014 | 9 | 2014 |
| Silicon nanowire growth on poly‐silicon‐on‐quartz substrates formed by aluminum‐induced crystallization C Kendrick, C Bomberger, N Dawley, J Georgiev, H Shen, JM Redwing Crystal Research and Technology 48 (9), 658-665, 2013 | 9 | 2013 |
| Gate-all-around integrated circuit structures having source or drain structures with epitaxial nubs C Bomberger, A Murthy, MT Bohr, T Ghani, B Guha US Patent 11,522,048, 2022 | 8 | 2022 |
| Implantation and Diffusion of Silicon Marker Layers in In0.53Ga0.47As H Aldridge, AG Lind, CC Bomberger, Y Puzyrev, C Hatem, RM Gwilliam, ... Journal of Electronic Materials 45, 4282-4287, 2016 | 7 | 2016 |
| Source or drain structures with relatively high germanium content C Bomberger, A Murthy, B Guha, A Bowonder, T Ghani US Patent App. 16/022,508, 2020 | 6 | 2020 |
| High Thermoelectric Power Factor and ZT in TbAs: InGaAs Epitaxial Nanocomposite Material BE Tew, P Vempati, LE Clinger, CC Bomberger, NI Halaszynski, ... Advanced Electronic Materials 5 (4), 1900015, 2019 | 6 | 2019 |