| State of the art of high temperature power electronics C Buttay, D Planson, B Allard, D Bergogne, P Bevilacqua, C Joubert, ... Materials Science and Engineering: B 176 (4), 283-288, 2011 | 463 | 2011 |
| Choosing a thermal model for electrothermal simulation of power semiconductor devices A Ammous, S Ghedira, B Allard, H Morel, D Renault IEEE transactions on Power Electronics 14 (2), 300-307, 1999 | 159 | 1999 |
| Transient temperature measurements and modeling of IGBT's under short circuit A Ammous, B Allard, H Morel IEEE transactions on power electronics 13 (1), 12-25, 1998 | 150 | 1998 |
| Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices C Raynaud, D Tournier, H Morel, D Planson Diamond and related materials 19 (1), 1-6, 2010 | 145 | 2010 |
| Thermal Stability of Silicon Carbide Power Diodes C Buttay, C Raynaud, H Morel, G Civrac, ML Locatelli, F Morel Electron Devices, IEEE Transactions on 59 (3), 761-769, 2012 | 106 | 2012 |
| Protruding ceramic substrates for high voltage packaging of wide bandgap semiconductors H Reynes, C Buttay, H Morel 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017 | 94 | 2017 |
| Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs C Chen, D Labrousse, S Lefebvre, M Petit, C Buttay, H Morel Microelectronics Reliability 55 (9-10), 1708-1713, 2015 | 91 | 2015 |
| Die attach of power devices using silver sintering-bonding process optimization and characterization C Buttay, A Masson, J Li, MC Johnson, M Lazar, C Raynaud, H Morel HiTEN 2011, 1-7, 2011 | 88 | 2011 |
| Electrothermal modeling of IGBTs: Application to short-circuit conditions A Ammous, K Ammous, H Morel, B Allard, D Bergogne, F Sellami, ... IEEE Transactions on Power Electronics 15 (4), 778-790, 2000 | 82 | 2000 |
| On the extraction of PiN diode design parameters for validation of integrated power converter design H Garrab, B Allard, H Morel, K Ammous, S Ghedira, A Amimi, K Besbes, ... IEEE Transactions on Power Electronics 20 (3), 660-670, 2005 | 73 | 2005 |
| Design and implementation of integrated common mode capacitors for SiC-JFET inverters R Robutel, C Martin, C Buttay, H Morel, P Mattavelli, D Boroyevich, ... IEEE transactions on power electronics 29 (7), 3625-3636, 2013 | 68 | 2013 |
| State variable modeling of the power pin diode using an explicit approximation of semiconductor device equations: A novel approach H Morel, SH Gamal, JP Chante IEEE transactions on power electronics 9 (1), 112-120, 1994 | 62 | 1994 |
| Towards an airborne high temperature SiC inverter D Bergogne, H Morel, D Planson, D Tournier, P Bevilacqua, B Allard, ... 2008 IEEE Power Electronics Specialists Conference, 3178-3183, 2008 | 61 | 2008 |
| Field effect in large grain polycrystalline silicon JP Colinge, H Morel, JP Chante IEEE Transactions on Electron Devices 30 (3), 197-201, 1983 | 57 | 1983 |
| Full Densification of Molybdenum Powders Using Spark Plasma Sintering B Mouawad, M Soueidan, D Fabregue, C Buttay, V Bley, B Allard, H Morel Metallurgical and Materials Transactions A, 1-8, 2012 | 46 | 2012 |
| Analysis of Power Switching Losses Accounting Probe Modeling K Ammous, H Morel, A Ammous Instrumentation and Measurement, IEEE Transactions on 59 (12), 3218-3226, 2010 | 44 | 2010 |
| Normally-On SiC JFETs in power converters: Gate driver and safe operation D Bergogne, D Risaletto, F Dubois, A Hammoud, H Morel, P Bevilacqua, ... 2010 6th International Conference on Integrated Power Electronics Systems, 1-6, 2010 | 44 | 2010 |
| Robustness in short-circuit mode of SiC MOSFETs C Chen, D Labrousse, S Lefebvre, M Petit, C Buttay, H Morel Proceedings of PCIM Europe 2015; International Exhibition and Conference for …, 2015 | 41 | 2015 |
| Power converter's optimisation and design. Discrete cost function with genetic based algorithms H Helali, D Bergogne, JBH Slama, H Morel, P Bevilacqua, B Allard, ... 2005 European Conference on Power Electronics and Applications, 7 pp.-P. 7, 2005 | 37 | 2005 |
| Model requirements for simulation of low-voltage MOSFET in automotive applications C Buttay, H Morel, B Allard, P Lefranc, O Brevet IEEE transactions on Power Electronics 21 (3), 613-624, 2006 | 35 | 2006 |
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