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G A Sapunov
G A Sapunov
Другие именаGeorgiy Sapunov, G Sapunov
Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP)
Подтвержден адрес электронной почты в домене spbau.ru
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Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si
AD Bolshakov, VV Fedorov, KY Shugurov, AM Mozharov, GA Sapunov, ...
Nanotechnology 30 (39), 395602, 2019
362019
Dopant-stimulated growth of GaN nanotube-like nanostructures on Si (111) by molecular beam epitaxy
AD Bolshakov, AM Mozharov, GA Sapunov, IV Shtrom, NV Sibirev, ...
Beilstein journal of nanotechnology 9 (1), 146-154, 2018
362018
Droplet epitaxy mediated growth of GaN nanostructures on Si (111) via plasma-assisted molecular beam epitaxy
VV Fedorov, AD Bolshakov, DA Kirilenko, AM Mozharov, AA Sitnikova, ...
CrystEngComm 20 (24), 3370-3380, 2018
322018
Single-Mode High-Speed 1550 nm Wafer Fused VCSELs for Narrow WDM Systems
A Babichev, S Blokhin, A Gladyshev, L Karachinsky, I Novikov, A Blokhin, ...
IEEE Photonics Technology Letters 35 (6), 297-300, 2023
272023
Self-catalyzed mbe-grown gap nanowires on si (111): V/iii ratio effects on the morphology and crystal phase switching
VV Fedorov, AD Bolshakov, LN Dvoretckaia, GA Sapunov, DA Kirilenko, ...
Semiconductors 52, 2092-2095, 2018
242018
Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane
OY Koval, VV Fedorov, AD Bolshakov, SV Fedina, FM Kochetkov, ...
Nanomaterials 10 (11), 2110, 2020
232020
Theoretical modeling of the self-catalyzed nanowire growth: nucleation-and adsorption-limited regimes
AD Bolshakov, AM Mozharov, GA Sapunov, VV Fedorov, LN Dvoretckaia, ...
Materials Research Express 4 (12), 125027, 2017
232017
Microlens-enhanced substrate patterning and MBE growth of GaP nanowires
AD Bolshakov, LN Dvoretckaia, VV Fedorov, GA Sapunov, AM Mozharov, ...
Semiconductors 52, 2088-2091, 2018
212018
Effective Suppression of Antiphase Domains in GaP (N)/GaP Heterostructures on Si (001)
AD Bolshakov, VV Fedorov, OY Koval, GA Sapunov, MS Sobolev, ...
Crystal Growth & Design 19 (8), 4510-4520, 2019
202019
Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates
VV Fedorov, Y Berdnikov, NV Sibirev, AD Bolshakov, SV Fedina, ...
Nanomaterials 11 (8), 1949, 2021
182021
Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface
KY Shugurov, AM Mozharov, AD Bolshakov, VV Fedorov, GA Sapunov, ...
Nanotechnology 31 (24), 244003, 2020
132020
Structural and optical characterization of dilute phosphide planar heterostructures with high nitrogen content on silicon
OY Koval, VV Fedorov, NV Kryzhanovskaya, GA Sapunov, DA Kirilenko, ...
CrystEngComm 22 (2), 283-292, 2020
112020
XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires
OY Koval, VV Fedorov, AD Bolshakov, IE Eliseev, SV Fedina, ...
Nanomaterials 11 (4), 960, 2021
72021
Single GaN Nanowires for Extremely High Current Commutation
K Shugurov, A Mozharov, G Sapunov, V Fedorov, M Tchernycheva, ...
physica status solidi (RRL)–Rapid Research Letters 15 (4), 2000590, 2021
62021
Synthesis and optical characterization of GaAs epitaxial nanoparticles on silicon
GA Sapunov, VV Fedorov, OY Koval, VA Sharov, LN Dvoretckaia, ...
Crystal Growth & Design 20 (1), 300-306, 2019
52019
Core-shell III-nitride nanowire heterostructure: negative differential resistance and device application potential
AM Mozharov, AA Vasiliev, AD Bolshakov, GA Sapunov, VV Fedorov, ...
Semiconductors 52, 489-492, 2018
52018
Modeling the semiconductor devices with negative differential resistance based on nitride nanowires
AM Mozharov, FE Komissarenko, AD Bolshakov, VV Fedorov, ...
Journal of Physics: Conference Series 917 (8), 082017, 2017
52017
Influence of interface layer preparation on the electrical and spectral characteristics of GaN/Si solar cells
KU Shugurov, AM Mozharov, GA Sapunov, VV Fedorov, AD Bolshakov, ...
Journal of Physics: Conference Series 993 (1), 012034, 2018
42018
Growth and optical properties of GaPN/GaP heterostructure nanowire array
OY Koval, GA Sapunov, VV Fedorov, IS Mukhin
Journal of Physics: Conference Series 1400 (5), 055036, 2019
32019
High-speed MBE-grown 1550 nm wafer-fused VCSELs
G Sapunov, SC Tian, S Blokhin, I Kovach, D Papylev, S Rochas, ...
Vertical-Cavity Surface-Emitting Lasers XXVIII 12904, 156-163, 2024
22024
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