| Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers MR Wagner, G Callsen, JS Reparaz, JH Schulze, R Kirste, M Cobet, ... Physical Review B—Condensed Matter and Materials Physics 84 (3), 035313, 2011 | 246 | 2011 |
| Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap F Nippert, SY Karpov, G Callsen, B Galler, T Kure, C Nenstiel, MR Wagner, ... Applied Physics Letters 109 (16), 2016 | 105 | 2016 |
| Phonon deformation potentials in wurtzite GaN and ZnO determined by uniaxial pressure dependent Raman measurements G Callsen, JS Reparaz, MR Wagner, R Kirste, C Nenstiel, A Hoffmann, ... Applied Physics Letters 98 (6), 2011 | 78 | 2011 |
| Optical signature of Mg-doped GaN: Transfer processes G Callsen, MR Wagner, T Kure, JS Reparaz, M Bügler, J Brunnmeier, ... Physical Review B—Condensed Matter and Materials Physics 86 (7), 075207, 2012 | 77 | 2012 |
| Ge doped GaN with controllable high carrier concentration for plasmonic applications R Kirste, MP Hoffmann, E Sachet, M Bobea, Z Bryan, I Bryan, C Nenstiel, ... Applied Physics Letters 103 (24), 2013 | 66 | 2013 |
| Compensation effects in GaN: Mg probed by Raman spectroscopy and photoluminescence measurements R Kirste, MP Hoffmann, J Tweedie, Z Bryan, G Callsen, T Kure, C Nenstiel, ... Journal of Applied Physics 113 (10), 2013 | 58 | 2013 |
| Germanium–the superior dopant in n‐type GaN C Nenstiel, M Bügler, G Callsen, F Nippert, T Kure, S Fritze, A Dadgar, ... physica status solidi (RRL)–Rapid Research Letters 9 (12), 716-721, 2015 | 57 | 2015 |
| Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method D Gogova, PP Petrov, M Buegler, MR Wagner, C Nenstiel, G Callsen, ... Journal of Applied Physics 113 (20), 2013 | 53 | 2013 |
| Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence F Nippert, S Karpov, I Pietzonka, B Galler, A Wilm, T Kure, C Nenstiel, ... Japanese Journal of Applied Physics 55 (5S), 05FJ01, 2016 | 48 | 2016 |
| Analysis of the exciton–LO-phonon coupling in single wurtzite GaN quantum dots G Callsen, GMO Pahn, S Kalinowski, C Kindel, J Settke, J Brunnmeier, ... Physical Review B 92 (23), 235439, 2015 | 28 | 2015 |
| Nature of red luminescence in oxygen treated hydrothermally grown zinc oxide nanorods S Anantachaisilp, SM Smith, C Ton-That, S Pornsuwan, AR Moon, ... Journal of Luminescence 168, 20-25, 2015 | 28 | 2015 |
| Breakdown of far-field Raman selection rules by light–plasmon coupling demonstrated by tip-enhanced Raman scattering E Poliani, MR Wagner, A Vierck, F Herziger, C Nenstiel, F Gannott, ... The Journal of Physical Chemistry Letters 8 (22), 5462-5471, 2017 | 25 | 2017 |
| Evaluation of local free carrier concentrations in individual heavily-doped GaN: Si micro-rods by micro-Raman spectroscopy MS Mohajerani, S Khachadorian, T Schimpke, C Nenstiel, J Hartmann, ... Applied Physics Letters 108 (9), 2016 | 22 | 2016 |
| Identification of a donor-related recombination channel in ZnO thin films M Brandt, H von Wenckstern, G Benndorf, M Lange, CP Dietrich, ... Physical Review B—Condensed Matter and Materials Physics 81 (7), 073306, 2010 | 21 | 2010 |
| Shallow carrier traps in hydrothermal ZnO crystals C Ton-That, LLC Lem, MR Phillips, F Reisdorffer, J Mevellec, TP Nguyen, ... New Journal of Physics 16 (8), 083040, 2014 | 18 | 2014 |
| Charge state switching of Cu acceptors in ZnO nanorods MA Rahman, MT Westerhausen, C Nenstiel, S Choi, A Hoffmann, ... Applied Physics Letters 110 (12), 2017 | 13 | 2017 |
| Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface S Choi, DJ Rogers, EV Sandana, P Bove, FH Teherani, C Nenstiel, ... Scientific reports 7 (1), 7457, 2017 | 12 | 2017 |
| Intrinsic electronic properties of high-quality wurtzite InN H Eisele, J Schuppang, M Schnedler, M Duchamp, C Nenstiel, V Portz, ... Physical Review B 94 (24), 245201, 2016 | 12 | 2016 |
| Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells F Nippert, A Nirschl, T Schulz, G Callsen, I Pietzonka, S Westerkamp, ... Journal of Applied Physics 119 (21), 2016 | 11 | 2016 |
| Electronic excitations stabilized by a degenerate electron gas in semiconductors C Nenstiel, G Callsen, F Nippert, T Kure, S Schlichting, N Jankowski, ... Communications Physics 1 (1), 38, 2018 | 8 | 2018 |
Axel HoffmannInstitute of Solid State Physics, Technical University of BerlinПодтвержден адрес электронной почты в домене tu-berlin.de