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Dr. Maik Simon
Dr. Maik Simon
Fraunhofer IPMS
Подтвержден адрес электронной почты в домене freenet.de
Название
Процитировано
Процитировано
Год
Efficient carrier-selective p-and n-contacts for Si solar cells
F Feldmann, M Simon, M Bivour, C Reichel, M Hermle, SW Glunz
Solar Energy Materials and Solar Cells 131, 100-104, 2014
2592014
Carrier-selective contacts for Si solar cells
F Feldmann, M Simon, M Bivour, C Reichel, M Hermle, SW Glunz
Applied Physics Letters 104 (18), 2014
2482014
Reconfigurable field effect transistors: A technology enablers perspective
T Mikolajick, G Galderisi, S Rai, M Simon, R Böckle, M Sistani, C Cakirlar, ...
Solid-State Electronics 194, 108381, 2022
572022
Top-down fabricated reconfigurable FET with two symmetric and high-current on-states
M Simon, B Liang, D Fischer, M Knaut, A Tahn, T Mikolajick, WM Weber
IEEE Electron Device Letters 41 (7), 1110-1113, 2020
552020
20 Years of reconfigurable field-effect transistors: From concepts to future applications
T Mikolajick, G Galderisi, M Simon, S Rai, A Kumar, A Heinzig, WM Weber, ...
Solid-State Electronics 186, 108036, 2021
492021
Top-down technology for reconfigurable nanowire FETs with symmetric on-currents
M Simon, A Heinzig, J Trommer, T Baldauf, T Mikolajick, WM Weber
IEEE Transactions on Nanotechnology 16 (5), 812-819, 2017
462017
A silicon nanowire ferroelectric field‐effect transistor
V Sessi, M Simon, H Mulaosmanovic, D Pohl, M Loeffler, T Mauersberger, ...
Advanced Electronic Materials 6 (4), 1901244, 2020
372020
A wired-AND transistor: Polarity controllable FET with multiple inputs
M Simon, J Trommer, B Liang, D Fischer, T Baldauf, MB Khan, A Heinzig, ...
2018 76th Device Research Conference (DRC), 1-2, 2018
352018
Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor
M Simon, H Mulaosmanovic, V Sessi, M Drescher, N Bhattacharjee, ...
Nature communications 13 (1), 7042, 2022
272022
Bringing reconfigurable nanowire FETs to a logic circuits compatible process platform
M Simon, A Heinzig, J Trommer, T Baldauf, T Mikolajick, WM Weber
2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), 1-3, 2016
192016
S2–2 back-bias reconfigurable field effect transistor: a flexible add-on functionality for 22 nm fdsoi
V Sessi, M Simon, S Slesazeck, M Drescher, H Mulaosmanovic, K Li, ...
2021 Silicon Nanoelectronics Workshop (SNW), 1-2, 2021
182021
Inherent charge-sharing-free dynamic logic gates employing transistors with multiple independent inputs
J Trommer, M Simon, S Slesazeck, WM Weber, T Mikolajick
IEEE Journal of the Electron Devices Society 8, 740-747, 2020
132020
Lateral extensions to nanowires for controlling nickel silicidation kinetics: Improving contact uniformity of nanoelectronic devices
M Simon, R Mizuta, Y Fan, A Tahn, D Pohl, J Trommer, S Hofmann, ...
ACS Applied Nano Materials 4 (5), 4371-4378, 2021
122021
Inside the Amazon Warehouse Where Humans and Machines Become One, 2019
M Simon
6
Cross-shape reconfigurable field effect transistor for flexible signal routing
C Cakirlar, M Simon, G Galderisi, I O'Connor, T Mikolajick, J Trommer
Materials Today Electronics 4, 100040, 2023
52023
Importance of temperature dependence of interface traps in high-k metal gate stacks for silicon spin-qubit development
Y Raffel, R Olivo, M Simon, L Vieler, R Hoffmann, S De, T Kämpfe, ...
Applied Physics Letters 123 (3), 2023
42023
Challenges in Electron Beam Lithography of Silicon Nanostructures
C Cakirlar, G Galderisi, C Beyer, M Simon, T Mikolajick, J Trommer
2022 IEEE 22nd International Conference on Nanotechnology (NANO), 207-210, 2022
32022
Eliminating charge sharing in clocked logic gates on the device level employing transistors with multiple independent inputs
J Trommer, M Simon, S Slesazeck, WM Weber, T Mikolajick
ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC …, 2019
32019
Semiconductor device structure having multiple gate terminals
M Simon, J Trommer, W Weber, S Slesazeck
US Patent 11,515,428, 2022
22022
Compact Modeling of Channel-Resistance Effects in Reconfigurable Field-Effect Transistors
C Roemer, G Darbandy, M Schwarz, J Trommer, M Simon, A Heinzig, ...
2022 29th International Conference on Mixed Design of Integrated Circuits …, 2022
22022
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