| Spontaneous crystallization of perovskite nanocrystals in nonpolar organic solvents: a versatile approach for their shape‐controlled synthesis H Huang, Y Li, Y Tong, EP Yao, MW Feil, AF Richter, M Döblinger, ... Angewandte Chemie International Edition 58 (46), 16558-16562, 2019 | 117 | 2019 |
| Templated‐Assembly of CsPbBr3 Perovskite Nanocrystals into 2D Photonic Supercrystals with Amplified Spontaneous Emission D Vila‐Liarte, MW Feil, A Manzi, JL Garcia‐Pomar, H Huang, M Döblinger, ... Angewandte Chemie International Edition 59 (40), 17750-17756, 2020 | 87 | 2020 |
| Growth of Perovskite CsPbBr3 Nanocrystals and Their Formed Superstructures Revealed by In Situ Spectroscopy H Huang, MW Feil, S Fuchs, T Debnath, AF Richter, Y Tong, L Wu, ... Chemistry of Materials 32 (20), 8877-8884, 2020 | 45 | 2020 |
| A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation P Salmen, MW Feil, K Waschneck, H Reisinger, G Rescher, T Aichinger 2021 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2021 | 42 | 2021 |
| Physical modeling of charge trapping in 4H-SiC DMOSFET technologies C Schleich, D Waldhoer, K Waschneck, MW Feil, H Reisinger, T Grasser, ... IEEE Transactions on Electron Devices 68 (8), 4016-4021, 2021 | 36 | 2021 |
| Gate-switching-stress test: Electrical parameter stability of SiC MOSFETs in switching operation P Salmen, MW Feil, K Waschneck, H Reisinger, G Rescher, I Voss, ... Microelectronics reliability 135, 114575, 2022 | 30 | 2022 |
| Towards understanding the physics of gate switching instability in silicon carbide MOSFETs MW Feil, K Waschneck, H Reisinger, J Berens, T Aichinger, P Salmen, ... 2023 IEEE International Reliability Physics Symposium (IRPS), 1-10, 2023 | 25 | 2023 |
| The impact of interfacial charge trapping on the reproducibility of measurements of silicon carbide MOSFET device parameters MW Feil, A Huerner, K Puschkarsky, C Schleich, T Aichinger, W Gustin, ... Crystals 10 (12), 1143, 2020 | 15 | 2020 |
| On the physical meaning of single-value activation energies for BTI in Si and SiC MOSFET devices MW Feil, K Puschkarsky, W Gustin, H Reisinger, T Grasser IEEE Transactions on Electron Devices 68 (1), 236-243, 2020 | 13 | 2020 |
| Assessing, controlling and understanding parameter variations of SiC power MOSFETs in switching operation T Aichinger, MW Feil, P Salmen Key Engineering Materials 947, 69-75, 2023 | 12 | 2023 |
| Influence of the threshold-voltage hysteresis on the switching properties of SiC MOSFETs A Huerner, P Sochor, M Feil, R Elpelt PCIM Europe digital days 2021; International Exhibition and Conference for …, 2021 | 12 | 2021 |
| On the frequency dependence of the gate switching instability in silicon carbide MOSFETs MW Feil, K Waschneck, H Reisinger, P Salmen, G Rescher, T Aichinger, ... Materials Science Forum 1092, 109-117, 2023 | 11 | 2023 |
| Electrically stimulated optical spectroscopy of interface defects in wide-bandgap field-effect transistors MW Feil, H Reisinger, A Kabakow, T Aichinger, C Schleich, A Vasilev, ... Communications Engineering 2 (1), 5, 2023 | 10 | 2023 |
| Optical emission correlated to bias temperature instability in SiC MOSFETs MW Feil, H Reisinger, A Kabakow, T Aichinger, W Gustin, T Grasser 2022 IEEE International Reliability Physics Symposium (IRPS), 3B. 1-1-3B. 1-9, 2022 | 9 | 2022 |
| Temperature-dependent electroluminescence of a gate pulsed silicon carbide metal–oxide–semiconductor field-effect transistor: Insight into interface traps M Weger, MW Feil, M Van Orden, J Cottom, M Bockstedte, G Pobegen Journal of Applied Physics 134 (3), 2023 | 4 | 2023 |
| Influence of turn-off gate-voltage undershoots on the turn-on behavior of SiC MOSFETs A Huerner, P Sochor, Q Sun, MW Feil, R Elpelt PCIM Europe 2022; International Exhibition and Conference for Power …, 2022 | 4 | 2022 |
| Gate switching instability in silicon carbide MOSFETs—Part I: Experimental MW Feil, K Waschneck, H Reisinger, J Berens, T Aichinger, S Prigann, ... IEEE Transactions on Electron Devices, 2024 | 3 | 2024 |
| Electroluminescence Spectra of a Gate Switched MOSFET at Cryogenic and Room Temperatures Agree with Ab Initio Calculations of 4H-SiC/SiO2-Interface Defects M Weger, D Biermeier, MW Feil, J Cottom, M Bockstedte, G Pobegen Materials Science Forum 1091, 15-23, 2023 | 3 | 2023 |
| Oxide and Interface Defect Analysis of Lateral 4H-SiC MOSFETs Through CV Characterization and TCAD Simulations A Vasilev, MW Feil, C Schleich, B Stampfer, G Rzepa, G Pobegen, ... Materials Science Forum 1090, 119-126, 2023 | 2 | 2023 |
| A recombination-enhanced-defect-reaction-based model for the gate switching instability in SiC MOSFETs T Grasser, M Feil, K Waschneck, H Reisinger, J Berens, D Waldhör, ... 2024 IEEE International Reliability Physics Symposium (IRPS), 3B. 1-1-3B. 1-7, 2024 | 1 | 2024 |
