Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis R Stoklas, D Gregušová, J Novák, A Vescan, P Kordoš
Applied Physics Letters 93 (12), 2008
128 2008 Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis P Kordoš, R Stoklas, D Gregušová, J Novák
Applied Physics Letters 94 (22), 2009
89 2009 Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation JT Asubar, Z Yatabe, D Gregusova, T Hashizume
Journal of Applied Physics 129 (12), 2021
87 2021 AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al2O3 gate oxide D Gregušová, R Stoklas, K Čičo, T Lalinský, P Kordoš
Semiconductor science and technology 22 (8), 947, 2007
84 2007 Improved transport properties of Al2O3∕ AlGaN∕ GaN metal-oxide-semiconductor heterostructure field-effect transistor P Kordoš, D Gregušová, R Stoklas, K Čičo, J Novák
Applied physics letters 90 (12), 2007
84 2007 Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors M Ťapajna, M Jurkovič, L Válik, Š Haščík, D Gregušová, F Brunner, ...
Applied Physics Letters 102 (24), 2013
69 2013 Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition D Gregušová, R Stoklas, C Mizue, Y Hori, J Novák, T Hashizume, ...
Journal of Applied Physics 107 (10), 2010
66 2010 Transport properties of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 of different thickness P Kordoš, D Gregušová, R Stoklas, Š Gaži, J Novák
Solid-state electronics 52 (6), 973-979, 2008
66 2008 Investigation of trap effects in AlGaN∕ GaN field-effect transistors by temperature dependent threshold voltage analysis P Kordoš, D Donoval, M Florovič, J Kováč, D Gregušová
Applied Physics Letters 92 (15), 2008
63 2008 Impact of GaN cap on charges in Al2O3/(GaN/) AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations M Ťapajna, M Jurkovič, L Válik, Š Haščík, D Gregušová, F Brunner, ...
Journal of Applied Physics 116 (10), 2014
53 2014 Trapping effects in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurements P Kordoš, R Stoklas, D Gregušová, Š Gaži, J Novák
Applied Physics Letters 96 (1), 2010
52 2010 Hot-electron-related degradation in InAlN/GaN high-electron-mobility transistors M Ťapajna, N Killat, V Palankovski, D Gregušová, K Čičo, JF Carlin, ...
IEEE Transactions on Electron Devices 61 (8), 2793-2801, 2014
46 2014 Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes M Mikulics, YC Arango, A Winden, R Adam, A Hardtdegen, ...
Applied Physics Letters 108 (6), 2016
45 2016 The effect of passivation on the performance of AlGaN/GaN heterostructure field-effect transistors P Kordoš, P Kúdela, D Gregušová, D Donoval
Semiconductor science and technology 21 (12), 1592, 2006
41 2006 Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics K Čičo, K Hušeková, M Ťapajna, D Gregušová, R Stoklas, J Kuzmík, ...
Journal of Vacuum Science & Technology B 29 (1), 2011
39 2011 Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region M Jurkovic, D Gregusova, V Palankovski, Š Hascik, M Blaho, K Cico, ...
IEEE electron device letters 34 (3), 432-434, 2013
38 2013 Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth D Gregušová, M Jurkovič, Š Haščík, M Blaho, A Seifertová, J Fedor, ...
Applied Physics Letters 104 (1), 2014
35 2014 High-temperature performance of AlGaN/GaN HFETs and MOSHFETs D Donoval, M Florovič, D Gregušová, J Kováč, P Kordoš
Microelectronics Reliability 48 (10), 1669-1672, 2008
35 2008 Formation of GaAs three-dimensional objects using AlAs “facet-forming” sacrificial layer and V Cambel, D Gregušová, R Kúdela
Journal of applied physics 94 (7), 4643-4648, 2003
33 2003 Influence of passivation induced stress on the performance of AlGaN/GaN HEMTs D Gregušová, J Bernát, M Držík, M Marso, J Novák, F Uherek, P Kordoš
physica status solidi (c) 2 (7), 2619-2622, 2005
32 2005 