| A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition S Duenas, H Castán, H García, E San Andrés, M Toledano-Luque, I Mártil, ... Semiconductor science and technology 20 (10), 1044, 2005 | 99 | 2005 |
| Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon S Dueñas, H Castán, H García, A De Castro, L Bailón, K Kukli, A Aidla, ... Journal of applied physics 99 (5), 2006 | 66 | 2006 |
| Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2O3, HfO2, and nanolaminates on different silicon substrates F Campabadal, JM Rafí, M Zabala, O Beldarrain, A Faigón, H Castán, ... Journal of Vacuum Science & Technology B 29 (1), 2011 | 64 | 2011 |
| Electrical properties of atomic-layer-deposited thin gadolinium oxide high-k gate dielectrics S Dueñas, H Castán, H Garcia, A Gómez, L Bailón, K Kukli, T Hatanpää, ... Journal of The Electrochemical Society 154 (10), G207, 2007 | 46 | 2007 |
| Experimental verification of intermediate band formation on titanium-implanted silicon H Castán, E Pérez, H García, S Dueñas, L Bailón, J Olea, D Pastor, ... Journal of Applied Physics 113 (2), 2013 | 41 | 2013 |
| The electrical-interface quality of as-grown atomic-layer-deposited disordered HfO2 on p-and n-type silicon S Duenas, H Castán, H Garcia, J Barbolla, K Kukli, J Aarik, A Aidla Semiconductor science and technology 19 (9), 1141, 2004 | 40 | 2004 |
| Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride Al/SiNx: H/InP and Al/SiNx: H/In0. 53Ga0. 47As structures by DLTS and conductance transient … H Castán, S Dueñas, J Barbolla, E Redondo, N Blanco, I Mártil, ... Microelectronics Reliability 40 (4-5), 845-848, 2000 | 40 | 2000 |
| A physically based model for resistive memories including a detailed temperature and variability description G González-Cordero, MB González, H García, F Campabadal, S Dueñas, ... Microelectronic Engineering 178, 26-29, 2017 | 38 | 2017 |
| Programming Pulse Width Assessment for Reliable and Low-Energy Endurance Performance in Al:HfO2-Based RRAM Arrays E Pérez, Ó González Ossorio, S Dueñas, H Castán, H García, C Wenger Electronics 9 (5), 864, 2020 | 36 | 2020 |
| Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis (dimethylamide) and water/ozone: Effects of growth temperature, oxygen source … H García, H Castán, S Duenas, L Bailón, F Campabadal, O Beldarrain, ... Journal of Vacuum Science & Technology A 31 (1), 2013 | 31 | 2013 |
| Current pulses to control the conductance in RRAM devices H García, S Dueñas, ÓG Ossorio, H Castán IEEE Journal of the Electron Devices Society 8, 291-296, 2020 | 28 | 2020 |
| Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks H Castán, S Dueñas, H García, A Gómez, L Bailón, M Toledano-Luque, ... Journal of Applied Physics 107 (11), 2010 | 28 | 2010 |
| Controlling the intermediate conductance states in RRAM devices for synaptic applications H García, OG Ossorio, S Dueñas, H Castán Microelectronic Engineering 215, 110984, 2019 | 27 | 2019 |
| Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices S Dueñas, H Castán, H García, E Miranda, MB Gonzalez, F Campabadal Microelectronic Engineering 178, 30-33, 2017 | 26 | 2017 |
| 2 MeV electron irradiation effects on the electrical characteristics of metal–oxide–silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics JM Rafí, F Campabadal, H Ohyama, K Takakura, I Tsunoda, M Zabala, ... Solid-state electronics 79, 65-74, 2013 | 26 | 2013 |
| Study From Cryogenic to High Temperatures of the High- and Low-Resistance-State Currents of ReRAM Ni–HfO2–Si Capacitors C Vaca, MB Gonzalez, H Castan, H Garcia, S Duenas, F Campabadal, ... IEEE Transactions on Electron Devices 63 (5), 1877-1883, 2016 | 24 | 2016 |
| Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors S Dueñas, H Castán, H Garcia, A Gómez, L Bailón, K Kukli, J Niinistö, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 24 | 2009 |
| Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon H García, S Dueñas, H Castán, A Gómez, L Bailón, M Toledano-Luque, ... Journal of Applied Physics 104 (9), 2008 | 23 | 2008 |
| Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-k gate dielectrics S Dueñas, H Castán, H García, A Gómez, L Bailón, M Toledano-Luque, ... Semiconductor science and technology 22 (12), 1344, 2007 | 23 | 2007 |
| Conductance transient, capacitance–voltage and deep-level transient spectroscopy characterization of atomic layer deposited hafnium and zirconium oxide thin films S Dueñas, H Castán, J Barbolla, K Kukli, M Ritala, M Leskelä Solid-State Electronics 47 (10), 1623-1629, 2003 | 23 | 2003 |
