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Abhisek Dixit
Abhisek Dixit
NXP Chair Professor, Electrical Engineering, IIT Delhi, New Delhi, India
Подтвержден адрес электронной почты в домене ee.iitd.ac.in - Главная страница
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Процитировано
Год
Analysis of the parasitic S/D resistance in multiple-gate FETs
A Dixit, A Kottantharayil, N Collaert, M Goodwin, M Jurczak, K De Meyer
IEEE Transactions on Electron Devices 52 (6), 1132-1140, 2005
4492005
Multiple gate semiconductor device and method for forming same
A Dixit, K De Meyer
US Patent 7,202,517, 2007
3122007
Impact of line-edge roughness on FinFET matching performance
E Baravelli, A Dixit, R Rooyackers, M Jurczak, NÒ Speciale, K De Meyer
IEEE Transactions on Electron Devices 54 (9), 2466-2474, 2007
1682007
Multi-gate devices for the 32 nm technology node and beyond
N Collaert, A De Keersgieter, A Dixit, I Ferain, LS Lai, D Lenoble, ...
Solid-State Electronics 52 (9), 1291-1296, 2008
1322008
FinFET analogue characterization from DC to 110 GHz
D Lederer, V Kilchytska, T Rudenko, N Collaert, D Flandre, A Dixit, ...
Solid-State Electronics 49 (9), 1488-1496, 2005
1302005
Impact of LER and random dopant fluctuations on FinFET matching performance
E Baravelli, M Jurczak, N Speciale, K De Meyer, A Dixit
IEEE transactions on nanotechnology 7 (3), 291-298, 2008
1232008
A functional 41-stage ring oscillator using scaled FinFET devices with 25-nm gate lengths and 10-nm fin widths applicable for the 45-nm CMOS node
N Collaert, A Dixit, M Goodwin, KG Anil, R Rooyackers, B Degroote, ...
IEEE Electron Device Letters 25 (8), 568-570, 2004
952004
A low-power multi-gate FET CMOS technology with 13.9 ps inverter delay, large-scale integrated high performance digital circuits and SRAM
K von Arnim, E Augendre, C Pacha, T Schulz, KT San, F Bauer, ...
2007 IEEE symposium on VLSI technology, 106-107, 2007
862007
25% drive current improvement for p-type multiple gate FET (MuGFET) devices by the introduction of recessed Si/sub 0.8/Ge/sub 0.2/in the source and drain regions
P Verheyen, N Collaert, R Rooyackers, R Loo, D Shamiryan, ...
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 194-195, 2005
652005
GIDL (gate-induced drain leakage) and parasitic schottky barrier leakage elimination in aggressively scaled HfO/sub 2/TiN FinFET devices
T Hoffmann, G Doornbos, I Ferain, N Collaert, P Zimmerman, M Goodwin, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
622005
Evaluation of 10-nm bulk FinFET RF performance—Conventional versus NC-FinFET
R Singh, K Aditya, SS Parihar, YS Chauhan, R Vega, TB Hook, A Dixit
IEEE Electron Device Letters 39 (8), 1246-1249, 2018
602018
Modeling of effective thermal resistance in sub-14-nm stacked nanowire and FinFETs
I Jain, A Gupta, TB Hook, A Dixit
IEEE Transactions on Electron Devices 65 (10), 4238-4244, 2018
572018
Impact of stochastic mismatch on measured SRAM performance of FinFETs with resist/spacer-defined fins: Role of line-edge-roughness
A Dixit, KG Anil, E Baravelli, P Roussel, A Mercha, C Gustin, M Bamal, ...
2006 International Electron Devices Meeting, 1-4, 2006
542006
Reliability comparison of triple-gate versus planar SOI FETs
F Crupi, B Kaczer, R Degraeve, V Subramanian, P Srinivasan, E Simoen, ...
IEEE Transactions on electron devices 53 (9), 2351-2357, 2006
532006
Reliability modeling and analysis of hot-carrier degradation in multiple-fin SOI n-channel FinFETs with self-heating
A Gupta, C Gupta, RA Vega, TB Hook, A Dixit
IEEE Transactions on Electron Devices 66 (5), 2075-2080, 2019
412019
3-D LER and RDF matching performance of nanowire FETs in inversion, accumulation, and junctionless modes
AK Bansal, C Gupta, A Gupta, R Singh, TB Hook, A Dixit
IEEE Transactions on Electron Devices 65 (3), 1246-1252, 2018
382018
Series Resistance Reduction in Stacked Nanowire FETs for 7-nm CMOS Technology
AK BANSAL, I JAIN, TB HOOK, A DIXIT
Journal of Electron Device Society 4 (5), 262-272, 2016
382016
Spacer defined FinFET: Active area patterning of sub-20 nm fins with high density
B Degroote, R Rooyackers, T Vandeweyer, N Collaert, W Boullart, ...
Microelectronic engineering 84 (4), 609-618, 2007
372007
High density six transistor FinFET SRAM cell layout
A Dixit
US Patent 8,445,384, 2013
362013
Multi-gate devices for the 32 nm technology node and beyond: Challenges for Selective Epitaxial Growth
N Collaert, R Rooyackers, A Hikavyy, A Dixit, F Leys, P Verheyen, R Loo, ...
Thin Solid Films 517 (1), 101-104, 2008
362008
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