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199 1994 InAlN/GaN HEMTs: A first insight into technological optimization J Kuzmik, A Kostopoulos, G Konstantinidis, JF Carlin, A Georgakilas, ...
IEEE transactions on electron devices 53 (3), 422-426, 2006
175 2006 Energy bandgap bowing of InAlN alloys studied by spectroscopic ellipsometry E Iliopoulos, A Adikimenakis, C Giesen, M Heuken, A Georgakilas
Applied Physics Letters 92 (19), 2008
133 2008 Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy E Dimakis, E Iliopoulos, K Tsagaraki, T Kehagias, P Komninou, ...
Journal of applied physics 97 (11), 2005
116 2005 Achievements and limitations in optimized GaAs films grown on Si by molecular‐beam epitaxy A Georgakilas, P Panayotatos, J Stoemenos, JL Mourrain, A Christou
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104 1992 Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy T Kehagias, GP Dimitrakopulos, J Kioseoglou, H Kirmse, C Giesen, ...
Applied Physics Letters 95 (7), 2009
90 2009 Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth E Iliopoulos, A Adikimenakis, E Dimakis, K Tsagaraki, G Konstantinidis, ...
Journal of crystal growth 278 (1-4), 426-430, 2005
84 2005 Realistic end-to-end simulation of the optoelectronic links and comparison with the electrical interconnections for system-on-chip applications ED Kyriakis-Bitzaros, N Haralabidis, M Lagadas, A Georgakilas, ...
Journal of lightwave technology 19 (10), 1532, 2001
83 2001 Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam epitaxy E Dimakis, E Iliopoulos, K Tsagaraki, A Adikimenakis, A Georgakilas
Applied physics letters 88 (19), 2006
75 2006 InGaN (0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy E Iliopoulos, A Georgakilas, E Dimakis, A Adikimenakis, K Tsagaraki, ...
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68 2007 Generation and annihilation of antiphase domain boundaries in GaAs on Si grown by molecular beam epitaxy A Georgakilas, J Stoemenos, K Tsagaraki, P Komninou, N Flevaris, ...
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68 1993 Control of the polarity of molecular-beam-epitaxy-grown GaN thin films by the surface nitridation of S Mikroulis, A Georgakilas, A Kostopoulos, V Cimalla, E Dimakis, ...
Applied Physics Letters 80 (16), 2886-2888, 2002
67 2002 Micro-Raman characterization of AG Kontos, YS Raptis, NT Pelekanos, A Georgakilas, E Bellet-Amalric, ...
Physical Review B—Condensed Matter and Materials Physics 72 (15), 155336, 2005
66 2005 Bowing of the band gap pressure coefficient in InxGa1− xN alloys G Franssen, I Gorczyca, T Suski, A Kamińska, J Pereiro, E Munoz, ...
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64 2008 Temperature dependence of GaN Schottky diodes I–V characteristics J Osvald, J Kuzmik, G Konstantinidis, P Lobotka, A Georgakilas
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64 2005 Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy SL Sahonta, GP Dimitrakopulos, T Kehagias, J Kioseoglou, ...
Applied Physics Letters 95 (2), 2009
63 2009 Gallium nitride-based potentiometric anion sensor NA Chaniotakis, Y Alifragis, G Konstantinidis, A Georgakilas
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62 2004 Physical model of InN growth on Ga-face GaN (0001) by molecular-beam epitaxy E Dimakis, E Iliopoulos, K Tsagaraki, A Georgakilas
Applied Physics Letters 86 (13), 2005
59 2005 