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Choong-Ki Kim
Choong-Ki Kim
KAIST, SK hynix, Georgia Tech.
Подтвержден адрес электронной почты в домене gatech.edu
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Процитировано
Процитировано
Год
Metallic Ti3C2Tx MXene Gas Sensors with Ultrahigh Signal-to-Noise Ratio
SJ Kim, HJ Koh, CE Ren, O Kwon, K Maleski, SY Cho, B Anasori, CK Kim, ...
ACS nano 12 (2), 986-993, 2018
14052018
Multilevel resistive switching nonvolatile memory based on MoS2 nanosheet-embedded graphene oxide
GH Shin, CK Kim, GS Bang, JY Kim, BC Jang, BJ Koo, MH Woo, YK Choi, ...
2D Materials 3 (3), 034002, 2016
822016
Self-curable gate-all-around MOSFETs using electrical annealing to repair degradation induced from hot-carrier injection
JY Park, DI Moon, ML Seol, CK Kim, CH Jeon, H Bae, T Bang, YK Choi
IEEE Transactions on Electron Devices 63 (3), 910-915, 2016
422016
Physically transient memory on a rapidly dissoluble paper for security application
H Bae, BH Lee, D Lee, ML Seol, D Kim, JW Han, CK Kim, SB Jeon, D Ahn, ...
Scientific Reports 6 (1), 38324, 2016
392016
Nano-electromechanical switch based on a physical unclonable function for highly robust and stable performance in harsh environments
KM Hwang, JY Park, H Bae, SW Lee, CK Kim, M Seo, H Im, DH Kim, ...
ACS nano 11 (12), 12547-12552, 2017
382017
Investigation of self-heating effects in gate-all-around MOSFETs with vertically stacked multiple silicon nanowire channels
JY Park, BH Lee, KS Chang, DU Kim, C Jeong, CK Kim, H Bae, YK Choi
IEEE Transactions on Electron Devices 64 (11), 4393-4399, 2017
342017
Sustainable electronics for nano-spacecraft in deep space missions
DI Moon, JY Park, JW Han, GJ Jeon, JY Kim, J Moon, ML Seol, CK Kim, ...
2016 IEEE International Electron Devices Meeting (IEDM), 31.8. 1-31.8. 4, 2016
332016
Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
E Kim, CK Kim, MK Lee, T Bang, YK Choi, SHK Park, KC Choi
Applied Physics Letters 108 (18), 2016
302016
A novel technique for curing hot-carrier-induced damage by utilizing the forward current of the PN-junction in a MOSFET
GB Lee, CK Kim, JY Park, T Bang, H Bae, SY Kim, SW Ryu, YK Choi
IEEE Electron Device Letters 38 (8), 1012-1014, 2017
272017
Electro-thermal annealing method for recovery of cyclic bending stress in flexible a-IGZO TFTs
MK Lee, CK Kim, JW Park, E Kim, ML Seol, JY Park, YK Choi, SHK Park, ...
IEEE Transactions on Electron Devices 64 (8), 3189-3192, 2017
252017
Low-frequency noise characteristics in SONOS flash memory with vertically stacked nanowire FETs
T Bang, BH Lee, CK Kim, DC Ahn, SB Jeon, MH Kang, JS Oh, YK Choi
IEEE Electron Device Letters 38 (1), 40-43, 2016
252016
High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
J Gun Oh, S Ki Hong, CK Kim, J Hoon Bong, J Shin, SY Choi, B Jin Cho
Applied Physics Letters 104 (19), 2014
252014
The work function behavior of aluminum-doped titanium carbide grown by atomic layer deposition
J Moon, HJ Ahn, Y Seo, TI Lee, CK Kim, IC Rho, CH Kim, WS Hwang, ...
IEEE Transactions on Electron Devices 63 (4), 1423-1427, 2016
242016
Abnormal electrical characteristics of multi-layered MoS2 FETs attributed to bulk traps
CK Kim, CH Yu, J Hur, H Bae, SB Jeon, H Park, YM Kim, KC Choi, ...
2D Materials 3 (1), 015007, 2016
242016
Electrothermal annealing (ETA) method to enhance the electrical performance of amorphous-oxide-semiconductor (AOS) thin-film transistors (TFTs)
CK Kim, E Kim, MK Lee, JY Park, ML Seol, H Bae, T Bang, SB Jeon, S Jun, ...
ACS Applied Materials & Interfaces 8 (36), 23820-23826, 2016
192016
Metallic Ti3C2Tx MXene gas sensors with ultrahigh signal-to-noise ratio, ACS Nano. 12 (2018) 986–993
SJ Kim, HJ Koh, CE Ren, O Kwon, K Maleski, SY Cho, B Anasori, CK Kim, ...
19
Quantitative Analysis of Deuterium Annealing Effect on Poly-Si TFTs by Low Frequency Noise and DC – Characterization
DH Kim, SK Lim, H Bae, CK Kim, SW Lee, M Seo, SY Kim, KM Hwang, ...
IEEE Transactions on Electron Devices 65 (4), 1640-1644, 2018
182018
Investigation of low-frequency noise in nonvolatile memory composed of a gate-all-around junctionless nanowire FET
US Jeong, CK Kim, H Bae, DI Moon, T Bang, JM Choi, J Hur, YK Choi
IEEE Transactions on Electron Devices 63 (5), 2210-2213, 2016
182016
Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration
JY Park, DI Moon, ML Seol, CH Jeon, GJ Jeon, JW Han, CK Kim, SJ Park, ...
Scientific Reports 6 (1), 19314, 2016
182016
Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
CK Kim, HJ Ahn, JM Moon, S Lee, DII Moon, JS Park, BJ Cho, YK Choi, ...
Solid-State Electronics 114, 90-93, 2015
182015
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